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Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growthSCHULZ, D; WAGNER, G; DOERSCHEL, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 86-88, issn 0921-5107Conference Paper

Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely methodROST, H.-J; SICHE, D; DOLLE, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 68-72, issn 0921-5107Conference Paper