SILICIDE FORMATION RESULTING FROM THE INTERFACIAL REACTION OF SILICON AND THIN FILMS OF IR-V ALLOYS AND BILAYERSEIZENBERG M.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 483-495; ABS. GER; BIBL. 24 REF.Article

FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON N-TYPES SILICONEIZENBERG M; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6885-6890; BIBL. 26 REF.Article

REACTIVELY SPUTTERED TITANIUM CARBIDE THIN FILMS: PREPARATION AND PROPERTIESEIZENBERG M; MURARKA SP.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3190-3194; BIBL. 13 REF.Article

X-RAY BRILLOUIN SCATTERING AND ELECTRICAL MEASUREMENTS OF ACOUSTOELECTRIC GAIN AND LATTICE ATTENUATION IN SEMIDEGENERATE N-GAASEIZENBERG M; FISHER B.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 10; PP. 5260-5269; BIBL. 32 REF.Article

Silicide formation resulting from the interfacial reaction of silicon and thin films of Ir-V alloys and bilayers = Formation de siliciure par suite de la réaction aux interfaces entre le silicium et les couches minces d'alliage Ir-V et les couches doubles = Silizidbildung infolge der Grenzflaechenreaktion zwischen Silizium und Ir-V-Legierungsduennschichten sowie DoppelschichtenEIZENBERG, M.Physica status solidi. A. Applied research. 1982, Vol 73, Num 2, pp 483-495, issn 0031-8965Article

AUGER ELECTRON SPECTROSCOPY ANALYSIS OF THE CONTACT REACTION OF PT-SI CODEPOSITED FILMS AND SILICONEIZENBERG M; BRENER R.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 1; PP. 41-48; BIBL. 13 REF.Article

CARBON INTERACTION WITH NICKEL SURFACES: MONOLAYER FORMATION AND STRUCTURAL STABILITY = INTERACTION DU CARBONE AVEC DES SURFACES DE NICKEL: FORMATION DE MONOCOUCHE ET STABILITE STRUCTURALEEIZENBERG M; BLAKELY JM.1979; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1979; VOL. 71; NO 8; PP. 3467-3471; BIBL. 28 REF.Article

CARBON MONOLAYER PHASE CONDENSATION ON NI(111)EIZENBERG M; BLAKELY JM.1979; SURF. SCI.; NLD; DA. 1979; VOL. 82; NO 1; PP. 228-236; BIBL. 12 REF.Article

FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY BARRIER ON SI: ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SIEIZENBERG M; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1577-1585; BIBL. 12 REF.Article

A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINIUM AND GADOLINIUM SILICIDE CONTACTSEIZENBERG M; THOMPSON RD; TU KN et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6891-6897; BIBL. 10 REF.Article

EFFECT OF SUBSTRATE TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYSEIZENBERG M; OTTAVIANI G; TU KN et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 376; NO 1; PP. 87-89; BIBL. 7 REF.Article

SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT₂SI AND PT_1.2SI FILMSEIZENBERG M; FOELL H; TU KN et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 547-549; BIBL. 12 REF.Article

Effects of thermal treatment on structures of Cu/atomic-layer-deposited TaN films/Si stacksWU, Y. Y; EIZENBERG, M.Thin solid films. 2006, Vol 514, Num 1-2, pp 33-44, issn 0040-6090, 12 p.Article

Copper ion diffusion in porous and nonporous SiO₂-based dielectrics using bias thermal stress and thermal stress testsFISHER, I; EIZENBERG, M.Thin solid films. 2008, Vol 516, Num 12, pp 4111-4121, issn 0040-6090, 11 p.Article

Ge-rich Co-Ge contacts to n-type GaAsKOLTIN, E; EIZENBERG, M.Journal of applied physics. 1992, Vol 71, Num 9, pp 4604-4611, issn 0021-8979Article

Interfacial reactions between thin films of Ti-Ta and single crystalline SiBEN-TZUR, M; EIZENBERG, M.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 5, pp 2721-2726, issn 0734-2101Article

Effect of phase separation on the electrical properties of the interface between Ni-Ta thin films and GaAs substrateLAHAV, A; EIZENBERG, M.Applied physics letters. 1985, Vol 46, Num 4, pp 430-432, issn 0003-6951Article

Characterization of interfaces of metal/amorphized (by implantation) Si/c-Si structuresGOLAN, A; FASTOW, R; EIZENBERG, M et al.Journal of applied physics. 1990, Vol 67, Num 4, pp 1940-1946, issn 0021-8979, 7 p.Article

Ion beam mixing of GaAs with films of Al, Si, and their nitridesFASTOW, R; BRENER, R; KALISH, R et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 2586-2590, issn 0021-8979, 1Article

Thermal stability of the Al/Pd_xW_100-x/Si contact systemsEIZENBERG, M; THOMPSON, R. D; TU, K. N et al.Journal of applied physics. 1985, Vol 58, Num 5, pp 1886-1892, issn 0021-8979Article

Chemical vapor deposited RuO_x films: Effect of oxygen flow rateGOPAL GANESAN, P; EIZENBERG, M; DORNFEST, C et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 9, pp G510-G516, issn 0013-4651Article

Growth mechanisms of silicon films produced by laser-induced chemical vapor depositionTAMIR, S; KOMEM, Y; EIZENBERG, M et al.Thin solid films. 1995, Vol 261, Num 1-2, pp 251-255, issn 0040-6090Article

Interfacial reactions between Ni films and GaAs = Réactions d'interface entre des couches de Ni et GaAsLAHAV, A; EIZENBERG, M; KOMEM, Y et al.Journal of applied physics. 1986, Vol 60, Num 3, pp 991-1001, issn 0021-8979Article

Energy band discontinuities in heterojunctions measured by internal photoemissionHEIBLUM, M; NATHAN, M. I; EIZENBERG, M et al.Applied physics letters. 1985, Vol 47, Num 5, pp 503-505, issn 0003-6951Article

Solid state reactions of Ta-W thin films and Si single crystals = Réactions à l'état solide des couches minces Ta-W et de Si monocristallinAPPELBAUM, A; EIZENBERG, M; BRENER, R et al.Vacuum. 1983, Vol 33, Num 4, pp 227-230, issn 0042-207XArticle