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EQUATION GENERALISEE DU BILAN DES PUISSANCES ACTIVES DANS UN OSCILLATEUR SYNCHRONISEFOMIN NN.1977; RADIOTEKHNIKA; S.S.S.R.; DA. 1977; VOL. 32; NO 5; PP. 42-47; BIBL. 11 REF.Article

A NONLINEAR INDEFINITE ADMITTANCE MATRIX FOR MODELING ELECTRONIC DEVICES.ARREOLA JI; LINDHOLM FA.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 765-767; BIBL. 11 REF.Article

ADMITTANCE CORRECTION FACTORS FOR GAP EXCITED CYLINDRICAL ANTENNAEWILLIAMSON AG.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 55; NO 3; PP. 441-448; BIBL. 6 REF.Article

ALGORITHME D'INVERSION DES BRANCHES D'UN CIRCUIT ELECTRIQUE LINEAIRESHAKIROV MA.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 11; PP. 61-68; BIBL. 3 REF.Article

DISPOSITIF POUR LA MESURE DES PARAMETRES DE L'ADMITTANCE DES DIPOLESBORINETS ID; KOZYR I YA; FEDOROV VN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 155-157; BIBL. 5 REF.Article

LE CONVERTISSEUR D'IMAGES ELECTRONIQUES BI-PLANAR EN TANT QU'ELEMENT DU CIRCUIT ELECTRIQUEKRASNOV VF; TUROVSKIJ LA.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 1966-1969; BIBL. 3 REF.Article

A.C. ADMITTANCE STUDIES OF SCHOTTKY DIODES USING A VECTOR-ANALYZER-SYSTEMENGEMANN J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 467-474; BIBL. 7 REF.Article

METHODE ENERGETIQUE POUR DETERMINER LES ADMITTANCES DES TRANSDUCTEURS PIEZOELECTRIQUESPAVLENKO OG.1977; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1977; VOL. 47; NO 12; PP. 2594-2600; BIBL. 9 REF.Article

ACTIVE BRIDGE FOR MEASURING THE ADMITTANCE PARAMETERS OF THE TRANSISTOR.PRASADA RAO DBSJ; SINGH BP.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 11; PP. 783-786; BIBL. 3 REF.Article

SENSITIVITY OF MICROSTRIP ANTENNAS TO ADMITTANCE BOUNDARY VARIATIONSMINK JW.1981; I.E.E.E. TRANS. ANTENNAS PROPAG.; ISSN 0018-926X; USA; DA. 1981; VOL. 29; NO 1; PP. 142-144; BIBL. 7 REF.Article

EFFECT OF MOBILE SPACE-CHARGE ON THE SMALL-SIGNAL ADMITTANCE OF DDR SILICON IMPATTS AT HIGH CURRENT DENSITIESSRIDHARAN M; ROY SK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1001-1003; BIBL. 6 REF.Article

OPTIMUM LOAD ADMITTANCE FOR A MICROWAVE POWER TRANSISTORTUCKER RS.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 410-411; BIBL. 5 REF.Article

AN AUTOMATIC SYSTEM FOR BROADBAND COMPLEX-ADMITTANCE MEASUREMENTS ON MOS STRUCTURES.BOUDRY MR.1978; J. PHYS. E; G.B.; DA. 1978; VOL. 11; NO 3; PP. 237-247; BIBL. 7 REF.Article

THE INPUT ADMITTANCE OF THE RECTANGULAR CAVITY-BACKED SLOT ANTENNA.COCKRELL CR.1976; I.E.E.E. TRANS. ANTENNAS PROPAG.; U.S.A.; DA. 1976; VOL. 24; NO 3; PP. 288-294; BIBL. 17 REF.Article

MODIFIED RATIONAL TWO-PORT MODEL OF THE UNIFORMLY DISTRIBUTED RC STRUCTUREUMESH KUMAR; KIRAT PAL.1980; AEUE, ARCH. ELEKTRON. UEBERTRAYUNGSTECH.; ISSN 0001-1096; DEU; DA. 1980; VOL. 34; NO 11; PP. 471-472; ABS. GER; BIBL. 5 REF.Article

CHARACTERISTICS OF CR-SIO2-NSI TUNNEL DIODES.KUMAR V; DAHLKE WE.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 143-152; BIBL. 33 REF.Article

INFLUENCE OF CARRIER TRANSIT TIME ON THE SMALL-SIGNAL ADMITTANCE OF SCLC DIODES.JAGER D; HEIDE MANN R; KASSING R et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 657-665; ABS. ALLEM.; BIBL. 10 REF.Article

MODELING RECTANGULAR WAVEGUIDE JUNCTIONS BY THE EIGENFUNCTION METHOD.NALBANDOGLU AH.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 8; PP. 688-694; BIBL. 8 REF.Article

NETWORK PARAMETER MEASUREMENTS OF ANTENNA ARRAYS.CUMMINS JA; PELLETIER MG; DELISLE GY et al.1977; I.E.E.E. TRANS. ANTENNES PROPAG.; U.S.A.; DA. 1977; VOL. 25; NO 6; PP. 760-766; BIBL. 11 REF.Article

COUPLED HORIZONTAL-WIRE ANTENNAS OVER A CONDUCTING OR DIELECTRIC HALF SPACE.SHEN LC; LEE KM; KING RWP et al.1977; RADIOSCI.; U.S.A.; DA. 1977; VOL. 12; NO 5; PP. 687-698; BIBL. 12 REF.Article

DIFFERENTIAL AMPLIFIER SYNTHESIS OF DRIVING-POINT ADMITTANCES.BOBROW LS.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 43; NO 6; PP. 529-535; BIBL. 2 REF.Article

ELECTRICAL CHARACTERISATION OF TRANSFERRED-ELECTRON DEVICES.MCBRETNEY J; HOWES MJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 20; PP. 532-533; BIBL. 3 REF.Article

THE CONSTRUCTION OF A FUNCTION WHICH REPRESENTS A NONIDEAL LINEAR CIRCUIT ELEMENT.BURGER JR.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 12; PP. 1736; BIBL. 4 REF.Article

SMALL-SIGNAL ADMITTANCE STUDY OF GAAS ANODIC MOS SYSTEMSAWADA T; HASEGAWA H.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 689-696; ABS. GER; BIBL. 18 REF.Article

ADMITTANCE D'UNE DIODE DIELECTRIQUE AVEC DES PIEGES EN TENANT COMPTE DES EFFETS D'UN CHAMP FORT.GIL'DENBLAT G SH; KARACHENTSEV A YA; POTASHEV YU N et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1510-1513; BIBL. 10 REF.Article

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