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CALCULATION OF THE DYNAMIC RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATESCOHEN JD; LANG DV.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 5321-5350; BIBL. 34 REF.Article

CHARACTERIZATION OF THE INTERFACE STATES AT AL-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACE LAYERMORANTE JR; LOUSA A; CARCELLER JE et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 537-538; BIBL. 7 REF.Article

ON THE EVALUATION OF CONTACT TEMPERATURE FROM POTENTIAL-DROP MEASUREMENTSTIMSIT RS.1983; IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOLGY; ISSN 0148-6411; USA; DA. 1983; VOL. 6; NO 1; PP. 115-121; BIBL. 13 REF.Article

SCHOTTKY BARRIER MEASUREMENTS ON P-TYPE IN0,53)GA0,47)ASVETERAN JL; MULLIN DP; ELDER DI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 2; PP. 187-190; BIBL. 9 REF.Article

SCHOTTKY BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINIUM-TITANIUM-GALLIUM ARSENIDE CONTACTSWADA Y; CHINO KI.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 559-564; BIBL. 13 REF.Article

THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGINGMARLOW GS; DAS MB; TONGSON L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 259-266; 7 P.; BIBL. 17 REF.Article

THE EFFECT OF BUILT-IN DRIFT FIELD AND EMITTER RECOMBINATIONS ON FCVD OF A P-N JUNCTION DIODEJAIN SC; RAY VC.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 515-523; BIBL. 18 REF.Article

EFFECT OF GETTERING ON LEAKAGE CURRENT IN SHALLOW JUNCTIONSGHEZZO M; GILDENBLAT G; COHEN SS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 6; PP. 519-521; BIBL. 3 REF.Article

RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTSMORI M.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 81-86; BIBL. 13 REF.Article

EFFET DES CONDITIONS D'ANODISATION DE L'ANTIMONIURE D'INDIUM SUR LA CARACTERISTIQUE D'UNE STRUCTURE MOSDAVYDOV VN; LEZINA TD.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 117-122; BIBL. 21 REF.Article

AN ACCURATE SCALAR POTENTIAL FINITE ELEMENT METHOD FOR LINEAR, TWO-DIMENSIONAL MAGNETOSTATICS PROBLEMSMCDANIEL TW; FERNANDEZ RB; ROOT RR et al.1983; INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING; ISSN 0029-5981; GBR; DA. 1983; VOL. 19; NO 5; PP. 725-737; BIBL. 10 REF.Article

MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACESMARGARITONDO G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 499-513; BIBL. 84 REF.Article

SUR LE PROBLEME DE L'ETUDE DE LA DYNAMIQUE D'ENCLENCHEMENT D'UN CONTACTEUR SYNCHRONE ET DE VIBRATION DE SES CONTACTSAKIMOV EG.1981; ELEKTROMEHANIKA; ISSN 0136-3360; SUN; DA. 1981; NO 7; PP. 769-772; BIBL. 4 REF.Article

ELECTRICAL MODELLING OF OHMIC CONTACTS FORMATION ON METAL-N-GAAS SYSTEMSMOJZES I.1980; ACTA PHYS. ACAD. SCI. HUNG.; ISSN 0001-6705; HUN; DA. 1980; VOL. 48; NO 2-3; PP. 131-146; BIBL. 30 REF.Article

DER EINFLUSS DES KONTAKTTRAEGER-WERKSTOFFES AUF DIE ZUVERLAESSIGKEIT VON KONTAKT-BAUELEMENTEN = L'INFLUENCE DU MATERIAU SUPPORT SUR LA FIABILITE DES CONTACTS ELECTRIQUESULBRICHT H.1980; F. U. M.; DEU; DA. 1980; VOL. 88; NO 1; PP. 21-27; ABS. ENG; BIBL. 17 REF.Article

AUTOMATISCHER KONTAKTWIDERSTANDSMESSPLATZ = DISPOSITIF AUTOMATIQUE DE MESURE DE LA RESISTANCE DE CONTACTHITZ J; URBIG J; STANGE HW et al.1979; NACHR.-TECH. ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 9; PP. 359-360; ABS. RUS/ENG; BIBL. 3 REF.Article

ESSAIS DE CONTACTS ELECTRIQUES. ENDURANCE - METHODOLOGIE - FIABILITEDEBIERNE M.1979; ONDE ELECTR.; FRA; DA. 1979; VOL. 59; NO 2; PP. 60-62; ABS. ENGArticle

RIVETS BIMETALLIQUES POUR CONTACTS ELECTRIQUES.FREUDIGER E.1976; PRO METAL; SUISSE; DA. 1976; VOL. 29; NO 149; PP. 22-23Article

CONTATTI ELETTRICI PIRI EFFICIENTI CON I RIVESTIMENTI DI RUTENIO. = CONTACTS ELECTRIQUES PLUS EFFICACES PAR LES REVETEMENTS DE RUTHENIUM1976; TRATTAMENTI E FINIT.; ITAL.; DA. 1976; VOL. 16; NO 7; PP. 79-82Article

PROPERTIES OF THE CONTACT ON ION CLEANED N AND P TYPE SILICON SURFACESVIEUJOT TESTEMALE E; PALAU JM; LASSABATERE L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 325-331; BIBL. 31 REF.Article

SYNCHRONISATION MUTUELLE DANS LES STRUCTURES JOSEPHSON MULTICONTACTSOVSYANNIKOV GA; KUZ'MIN LS; LIKHAREV KK et al.1982; RADIOTEH. ELEKTRON.; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 8; PP. 1613-1621; BIBL. 9 REF.Article

JOINING ELECTRIC CONTACTS. ULTRASONICS WORKS FAST = ASSEMBLAGE RAPIDE DES CONTACTS ELECTRIQUES PAR SOUDAGE PAR ULTRASONSDEVINE J.1980; WELD. DES. FABR.; ISSN 0043-2253; USA; DA. 1980; VOL. 53; NO 3; PP. 112-115; LOC. ISArticle

GEGENWAERTIGER STAND DES EINSATZES VON KONTAKTWERKSTOFFEN IN DER FERNMELDETECHNIK = ETAT ACTUEL DE L'APPLICATION DES MATERIAUX DE CONTACT EN TELECOMMUNICATIONMARTIN H.1979; NACHR.-TECH. ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 9; PP. 356-358; ABS. RUS/ENG; BIBL. 4 REF.Article

DEVELOPMENT OF NATURAL" FILMS ON PRECIOUS METAL CONTACTS.FAIRWEATHER A; LAZENBY F; MARR D et al.1976; TRANS. INST. METAL FINISHG; G.B.; DA. 1976; VOL. 54; NO 3; PP. 145-150; BIBL. 11 REF.Article

INTERFACIAL ELECTRICAL PROPERTIES OF ION-BEAM SPUTTER DEPOSITED AMORPHOUS CARBON ON SILICONAZIM KHAN; WOOLLAM JA; CHUNG Y et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 146-149; BIBL. 16 REF.Article

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