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TECHNIQUES DE DETECTIONS DE L'EFFET D'INDUCTION APPLIQUEES AUX PROSPECTIONS MAGNETOTELLURIQUES A SAKHALINE ET EN YAKOUTIEBUBNOV VP; CHERNYAVSKIJ GA; YAKOVLEV IA et al.1977; PRIKL. GEOFIZ.; S.S.S.R.; DA. 1977; NO 85; PP. 87-96; BIBL. 4 REF.Article

DETERMINATION OF THE FIELD EFFECT IN LOW-CONDUCTIVITY MATERIALS WITH THE CARGE-FLOW TRANSISTORSENTURIA SD; RUBINSTEIN J; AZOURY SJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3663-3670; BIBL. 12 REF.Article

NOUVELLE POSSIBILITE D'EMPLOI DE L'EFFET DE CHAMP POUR L'ETUDE DES PROPRIETES D'ETATS DE SURFACEKALASHNIKOV SG; FEDOSOV VI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 6; PP. 1154-1159; BIBL. 9 REF.Article

AN AC FIELD-EFFECT STUDY OF SI-SIO2 INTERFACE STATESRAO DK; MAJHI J.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 9; PP. 1769-1773; BIBL. 16 REF.Article

FIELD EFFECT AND THERMOELECTRIC POWER ON ARSENIC-DOPED AMORPHOUS SILICONJAN ZS; HUBE RH; KNIGHTS JC et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 1; PP. 47-56; BIBL. 8 REF.Article

SUR UN NOUVEAU TYPE DE MODULATEUR ET LIMITEUR HYPERFREQUENCES SUBNANOSECONDE.BOITTIAUX B; BECQUELIN Y; JENDRZEJCZAK JM et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 10; PP. 1663-1677; ABS. ANGL.; BIBL. 11 REF.Article

FIELD EFFECT PROPERTIES OF POLYACETYLENEGRANT PM; KROUNBI M; CLARKE TC et al.1982; MOL. CRYST. LIQ. CRYST.; ISSN 0026-8941; GBR; DA. 1982; VOL. 86; NO 1-4; PP. 1979Conference Paper

FIELD EFFECT STUDIES ON P-TYPE PBTE METAL/INSULATOR/SEMICONDUCTOR STRUCTURESDAWAR AL; TANEJA OP; PARADKAR SK et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 92; NO 3; PP. 295-301; BIBL. 27 REF.Article

ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS: THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTSHILDEBRAND O.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 575-584; ABS. GER; BIBL. 34 REF.Article

ELECTRONIC PROPERTIES OF SUBSTITUTIONALLY DOPED AMORPHOUS SI AND GE.SPEAR WE; LE COMBER PG.1976; PHILOS. MAG.; G.B.; DA. 1976; VOL. 33; NO 6; PP. 935-949; BIBL. 22 REF.Article

THE EFFECTS OF FIELD AND TEMPERATURE HEATING IN INTRINSIC SEMICONDUCTORS WITH NON-INJECTING CONTACTSARONOV DA; MAMATKULOV R; RUBINOV VV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. 159-165; ABS. RUS; BIBL. 8 REF.Article

FIELD EFFECT STUDIES IN A P-TYPE SNTE METAL-INSULATOR-SEMICONDUCTOR STRUCTUREDAWAR AL; MOHAMMED AO; TANEJA OP et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5311-5313; BIBL. 21 REF.Article

CHARGE TRANSFER BETWEEN ZNO CRYSTALS AND DYE LAYERSBROICH B; HEILAND G.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 92; NO 1; PP. 247-264; BIBL. 17 REF.Article

LIQUID CRYSTAL DISPLAYS1979; ENGNG MATER. DESIGN; GBR; DA. 1979; VOL. 23; NO 2; PP. 54-56Article

RANDSCHICHTGESTEUERTER TRAEGERTRANSPORT IN STRUKTUREN MIT AMORPHEN HALBLEITERN = LE TRANSPORT DES PORTEURS CONTROLE PAR LA COUCHE LIMITE DANS LES STRUCTURES COMPORTANT DES SEMICONDUCTEURS AMORPHESHAIDUK A; KOTTWITZ A; STOETZEL H et al.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 2; PP. 67-70; BIBL. 16 REF.Article

TRANSPORT OF RESIDUAL IONS AND RECTIFICATION IN LIQUID-CRYSTAL DISPLAYS.SUSSMAN A.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 3 PART. 1; PP. 1131-1138; BIBL. 19 REF.Article

ELECTRICAL PROPERTIES OF UNCONTAMINATED PBTE FILMS ON MICA SUBSTRATES PREPARED BY MOLECULAR BEAM DEPOSITION.PARKER EHC; WILLIAMS D.1977; SOLID. STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 567-577; H.T. 1; BIBL. 37 REF.Article

LIQUID-CRYSTAL DISPLAYS, LCDCHANNIN DJ; SUSSMAN A.1980; TOPICS APPL. PHYS.; DEU; DA. 1980; VOL. 40; PP. 151-180; BIBL. 96 REF.Article

PHODO-F.E.T. METHOD: HIGH-RESOLUTION DEEP-LEVEL MEASUREMENT TECHNIQUE USING A M.E.S.F.E.T. STRUCTURETEGUDE FJ; HEIME K.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 22-23; BIBL. 5 REF.Article

MICROCIRCUIT ANALYSIS TECHNIQUES USING FIELD-EFFECT LIQUID CRYSTALSBURNS DJ.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 1; PP. 90-95; BIBL. 12 REF.Article

ON THE MECHANISM OF DISSIPATION OF ENERGY RELEASED IN THE CAPTURE OF CHARGE CARRIERS TO ADSORPTIVE SLOW STATES OF A SEMICONDUCTORKISELEV VF; KOZLOV SN; LEVSHIN NL et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 93-101; ABS. GER; BIBL. 24 REF.Article

ENHANCEMENT- AND DEPLETION-MODE VERTICAL-CHANNEL M.O.S. GATED THYRISTORSBALIGA BJ.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 645-647; BIBL. 5 REF.Article

FIELD EFFECT IN SEMICONDUCTOR CRITICAL-THICKNESS LAYERSSYNOROV VF.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. 83-90; ABS. RUS; BIBL. 14 REF.Article

INSTALLATION POUR LA MESURE DE L'EFFET DE CHAMP DANS LES SEMICONDUCTEURSBELOUS MV; KOROBANOV VL; NOVOMINSKIJ BA et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 2; PP. 205-206; BIBL. 4 REF.Article

MODELISATION DU FONCTIONNEMENT D'UN TRANSISTOR A EFFET DE CHAMP EN TANT QU'ELEMENT DE LA LOGIQUE A INJECTION A EFFET DE CHAMPBATALOV BV; KREMLEV V YA; D'YAKONOV VM et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 34-43; BIBL. 12 REF.Article

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