TECHNIQUES DE DETECTIONS DE L'EFFET D'INDUCTION APPLIQUEES AUX PROSPECTIONS MAGNETOTELLURIQUES A SAKHALINE ET EN YAKOUTIEBUBNOV VP; CHERNYAVSKIJ GA; YAKOVLEV IA et al.1977; PRIKL. GEOFIZ.; S.S.S.R.; DA. 1977; NO 85; PP. 87-96; BIBL. 4 REF.Article

DETERMINATION OF THE FIELD EFFECT IN LOW-CONDUCTIVITY MATERIALS WITH THE CARGE-FLOW TRANSISTORSENTURIA SD; RUBINSTEIN J; AZOURY SJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3663-3670; BIBL. 12 REF.Article

NOUVELLE POSSIBILITE D'EMPLOI DE L'EFFET DE CHAMP POUR L'ETUDE DES PROPRIETES D'ETATS DE SURFACEKALASHNIKOV SG; FEDOSOV VI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 6; PP. 1154-1159; BIBL. 9 REF.Article

AN AC FIELD-EFFECT STUDY OF SI-SIO₂ INTERFACE STATESRAO DK; MAJHI J.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 9; PP. 1769-1773; BIBL. 16 REF.Article

FIELD EFFECT AND THERMOELECTRIC POWER ON ARSENIC-DOPED AMORPHOUS SILICONJAN ZS; HUBE RH; KNIGHTS JC et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 1; PP. 47-56; BIBL. 8 REF.Article

SUR UN NOUVEAU TYPE DE MODULATEUR ET LIMITEUR HYPERFREQUENCES SUBNANOSECONDE.BOITTIAUX B; BECQUELIN Y; JENDRZEJCZAK JM et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 10; PP. 1663-1677; ABS. ANGL.; BIBL. 11 REF.Article

FIELD EFFECT STUDIES ON P-TYPE PBTE METAL/INSULATOR/SEMICONDUCTOR STRUCTURESDAWAR AL; TANEJA OP; PARADKAR SK et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 92; NO 3; PP. 295-301; BIBL. 27 REF.Article

ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS: THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTSHILDEBRAND O.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 575-584; ABS. GER; BIBL. 34 REF.Article

ELECTRONIC PROPERTIES OF SUBSTITUTIONALLY DOPED AMORPHOUS SI AND GE.SPEAR WE; LE COMBER PG.1976; PHILOS. MAG.; G.B.; DA. 1976; VOL. 33; NO 6; PP. 935-949; BIBL. 22 REF.Article

THE EFFECTS OF FIELD AND TEMPERATURE HEATING IN INTRINSIC SEMICONDUCTORS WITH NON-INJECTING CONTACTSARONOV DA; MAMATKULOV R; RUBINOV VV et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. 159-165; ABS. RUS; BIBL. 8 REF.Article

ON THE MECHANISM OF DISSIPATION OF ENERGY RELEASED IN THE CAPTURE OF CHARGE CARRIERS TO ADSORPTIVE SLOW STATES OF A SEMICONDUCTORKISELEV VF; KOZLOV SN; LEVSHIN NL et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 93-101; ABS. GER; BIBL. 24 REF.Article

ENHANCEMENT- AND DEPLETION-MODE VERTICAL-CHANNEL M.O.S. GATED THYRISTORSBALIGA BJ.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 645-647; BIBL. 5 REF.Article

FIELD EFFECT IN SEMICONDUCTOR CRITICAL-THICKNESS LAYERSSYNOROV VF.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. 83-90; ABS. RUS; BIBL. 14 REF.Article

INSTALLATION POUR LA MESURE DE L'EFFET DE CHAMP DANS LES SEMICONDUCTEURSBELOUS MV; KOROBANOV VL; NOVOMINSKIJ BA et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 2; PP. 205-206; BIBL. 4 REF.Article

MODELISATION DU FONCTIONNEMENT D'UN TRANSISTOR A EFFET DE CHAMP EN TANT QU'ELEMENT DE LA LOGIQUE A INJECTION A EFFET DE CHAMPBATALOV BV; KREMLEV V YA; D'YAKONOV VM et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 34-43; BIBL. 12 REF.Article

Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped SiSHINDO, Daisuke; YOSHIMURA, Takeshi; FUJIMURA, Norifumi et al.Applied surface science. 2008, Vol 254, Num 19, pp 6218-6221, issn 0169-4332, 4 p.Conference Paper

Engineering of the LISA Pathfinder mission―making the experiment a practical realityWARREN, Carl; DUNBAR, Neil; BACKLER, Mike et al.Classical and quantum gravity (Print). 2009, Vol 26, Num 9, issn 0264-9381, 094002.1-094002.9Conference Paper

Electroactive polymer (EAP)actuators as artificial muscles : reality, potential, and challengesBar-Cohen, Yoseph.2001, isbn 0-8194-4054-X, XVII,765 p, isbn 0-8194-4054-XBook

Onsager symmetries in field-dependent flows of rarefied molecular gasesTEN BOSCH, B. I. M; BEENAKKER, J. J. M.Physica. A. 1984, Vol 123, Num 2-3, pp 443-462, issn 0378-4371Article

Spatial and Temporal Control of Nucleation by Localized DC Electric FieldHAMMADI, Zoubida; ASTIER, Jean-Pierre; MORIN, Roger et al.Crystal growth & design. 2009, Vol 9, Num 8, pp 3346-3347, issn 1528-7483, 2 p.Article

ELECTRO-OPTICAL APPLICATIONS OF LIQUID CRYSTALS.MARGERUM JD; MILLER LJ.1977; J. COLLOID INTERFACE SCI.; U.S.A.; DA. 1977; VOL. 58; NO 3; PP. 559-580; BIBL. 2 P. 1/2; (INT. CONF. COLLOIDS SURF.; PUERTO RICO; 1976)Conference Paper

FIELD EFFECT ON AMORPHOUS OPTICAL MEMORY.OKUDA M; MAISUSHITA T; YAMAGAMI T et al.1973; IN: TOP. MEET. OPT. STORAGE DIGITAL DATA; ASPEN, COLO.; 1973; WASHINGTON; OPT. SOC. AMERICA; DA. 1973; PP. MB7.1-MB7.4; BIBL. 8 REF.Conference Paper

ALTERATION OF DIFFUSION PROFILES IN SEMICONDUCTORS DUE TO P-N JUNCTIONSANTHONY PJ.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1171-1177; BIBL. 33 REF.Article

EXCITATION KINETICS OF ACH LUMINESCENCE IN X-RAY IRRADIATED ARGON-HYDROGEN MIXTURESSHMULOVICH J; YATSIV S.1980; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1980; VOL. 75; NO 2; PP. 319-323; BIBL. 17 REF.Article

BARRIER-LIMITED CONDUCTIVITY IN THIN SEMICONDUCTING FILMSVAN CALSTER A.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. 207-216; ABS. GER; BIBL. 15 REF.Article