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NEW APPROACH TO ELECTRON BEAM LITHOGRAPHYFULTON TA; DOLAN GJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 752-754; BIBL. 9 REF.Article

PROXIMITY EFFECT CORRECTION FOR ELECTRON BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSEOWEN G; RISSMAN P.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3573-3581; BIBL. 6 REF.Article

SOME CONSIDERATIONS ON THE DESIGN OF A FIELD EMISSION GUN FOR A SHAPED SPOT LITHOGRAPHY SYSTEMORLOFF J; SWANSON LW.1982; OPTIK (STUTTGART); ISSN 0030-4026; DEU; DA. 1982; VOL. 61; NO 3; PP. 237-245; ABS. GER; BIBL. 14 REF.Article

EXPLORATION OF ELECTRON-BEAM WRITING STRATEGIES AND RESIST DEVELOPMENT EFFECTROSENFIELD MG; NEUREUTHER AR.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1289-1294; BIBL. 11 REF.Article

AUTO-REGISTRATION TECHNIQUE IN ELECTRON BEAM LITHOGRAPHYIGAKI S; NAKAYAMA N; FURUKAWA Y et al.1981; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1981; VOL. 17; NO 1; PP. 101-114; BIBL. 11 REF.Article

ELECTRON BEAM LITHOGRAPHY FOR INTEGRATED CIRCUIT FABRICATIONAHMED H.1980; PHYS. TECHNOL.; ISSN 0305-4624; GBR; DA. 1980; VOL. 11; NO 5; PP. 169-174Article

UTILISATION INDUSTRIELLE D'UN COMPOSEUR A FAISCEAU ELECTRONIQUE DE RETICULES ECHELLE 10BERNARD F; TROTEL J.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 159-162; ABS. ENGConference Paper

RESIST POSSIBILITIES IN ION BEAM LITHOGRAPHYMACRANDER A; BARR D; WAGNER A et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 215-219; BIBL. 21 REF.Article

THE INFLUENCE OF ELECTRON BEAM LITHOGRAPHY ON SEMICONDUCTOR DEVICE TECHNOLOGYDANIEL PJ.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 169-185; BIBL. 17 REF.Conference Paper

ELECTRON-BEAM LITHOGRAPHY - A NEW APPROACH TO REGISTRATIONJONES GAC; AHMED H.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 16; PP. 38-46; 4 P.Article

PHYSIKALISCH-TECHNISCHE PROBLEME DER ELEKTRONENSTRAHLLITHOGRAPHIE = PROBLEMES PHYSIQUES ET TECHNIQUES DE LA LITHOGRAPHIE PAR FAISCEAU D'ELECTRONSKASCHLIK K; HAHN E; KUSCHEL G et al.1980; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 5; PP. 451-475; ABS. ENG; BIBL. 21 REF.Article

RELIABILITY, AVAILABILITY AND SERVICEABILITY OF DIRECT WAFER EXPOSURE ELECTRON BEAM SYSTEMSMOORE RD.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 153-158; ABS. FRE; BIBL. 6 REF.Conference Paper

FORMATION D'UNE TACHE ELECTRONIQUE DE FIGURE ET COURANTS LIMITES DES FAISCEAUX DANS LES SYSTEMES A BALAYAGEVOROB'EV YU V; ZHUKOV VA.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 4; PP. 311-315; BIBL. 2 REF.Article

PARTICULARITES DE LA FORMATION DU CHAMP MAGNETIQUE FOCALISANT DANS UNE LENTILLE MULTI-FENTEVASICHEV BN.1982; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1982; NO 10; PP. 19-21; BIBL. 1 REF.Article

CURRENT CONTROL TECHNIQUE IN ELECTRON BEAM LITHOGRAPHYMUNAKATA C; KURODA K; TANIGUCHI Y et al.1980; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1980; VOL. 13; NO 2; PP. 163-164; BIBL. 3 REF.Article

DOUBLE-LAYER RESIST FILMS FOR SUBMICROMETER ELECTRON-BEAM LITHOGRAPHYTODOKORO Y.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1443-1448; BIBL. 18 REF.Article

SUBSTRATE THICKNESS CONSIDERATIONS IN ELECTRON BEAM LITHOGRAPHYADESIDA I; EVERHART TE.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5994-6005; BIBL. 53 REF.Article

ANALYSIS OF THE ROLE OF HIGH-BRIGHTNESS ELECTRON GUNS IN LITHOGRAPHYWOLFE JC.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 540-543; BIBL. 12 REF.Article

IMAGING AND DEFLECTION CONCEPTS IN ELECTRON BEAM LITHOGRAPHYPFEIFFER HC.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 145-151; ABS. FRE; BIBL. 17 REF.Conference Paper

DOUBLE-LAYER RESIST FILMS FOR SUBMICROMETER ELECTRON-BEAM LITHOGRAPHYTODOKORO Y.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 508-513; BIBL. 18 REF.Article

PROXIMITY CORRECTION ENHANCEMENTS FOR 1-MU M DENSE CIRCUITSGROBMAN WD; SPETH AJ; CHANG THP et al.1980; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1980; VOL. 24; NO 5; PP. 537-544; BIBL. 20 REF.Article

PROXIMITY EFFECTS IN ELECTRON LITHOGRAPHY: MAGNITUDE AND CORRECTION TECHNIQUESPARIKH M.1980; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1980; VOL. 24; NO 4; PP. 438-451; BIBL. 35 REF.Article

QUANTITATIVE EVALUATION OF PROXIMITY EFFECT IN RASTER-SCAN EXPOSURE SYSTEM FOR ELECTRON-BEAM LITHOGRAPHYNAKASE M; YOSHIMI M.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1460-1465; BIBL. 19 REF.Article

ELECTRON BEAM LITHOGRAPHY FOR THE 80 SPIWCZYK BP; WILLIAMS AE.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 74-82; BIBL. 29 REF.Article

HIGH VOLTAGE ELECTRON LITHOGRAPHYNEILL TR; BULL CJ.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 16; PP. 621-623; BIBL. 3 REF.Article

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