kw.\*:("ELECTRON BOMBARDMENT EVAPORATION")
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TECHNOLOGICAL ADVANCES IN PHYSICAL VAPOR DEPOSITIONHERKLOTZ G; ELIGEHAUSEN H.1983; IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOLGY; ISSN 0148-6411; USA; DA. 1983; VOL. 6; NO 2; PP. 173-180; BIBL. 7 REF.Article
ELECTRON-BEAM EVAPORATED SILICON FILMS FOR MIS SOLAR CELLSDEY SK.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1181-1185; BIBL. 10 REF.Conference Paper
FONCTION DE DISTRIBUTION DE LA DENSITE DU FLUX GAZEUX D'UN EVAPORATEUR A FAISCEAU ELECTRONIQUEPANTELEEV GV; YAMPOL'SKIJ VI; EGOROV VN et al.1982; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1982; NO 5; PP. 42-44; BIBL. 6 REF.Article
ION-BEAM-ASSISTED DEPOSITION OF THIN FILMSMARTIN PJ; MACLEOD HA; NETTERFIELD RP et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 1; PP. 178-184; BIBL. 26 REF.Article
A LOW-TEMPERATURE FABRICATION PROCESS OF POLYCRYSTALLINE SILICON-SILICON P+-N JUNCTION DIODEWU CMM; YANG ES.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 813-814; BIBL. 10 REF.Article
MODEL FOR DESCRIBING EMISSION CHARACTERISTICS OF ELECTRON-BEAM EVAPORATION SOURCESSZILAGYI M.1979; ELECTROCOMPON. SCI. TECHNOL.; GBR; DA. 1979; VOL. 6; NO 1; PP. 9-12; BIBL. 10 REF.Article
Control of ionization in e-beam evaporators via optimum choice of focus-coil currentBHATIA, M. S; PATEL, K; JOSHI, A et al.Review of scientific instruments. 1989, Vol 60, Num 8, pp 2794-2796, issn 0034-6748Article
Kogesputterte Silicide für hochintegrierte festkörperschaltkreise = Couches minces de siliciures copulvérisées pour circuits hautement intégrés à l'état solide = Cosputtered silicides for VLSI-circuitsTEMMLER, D; RASCHKE, T; ROCKOFF, A et al.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 5, pp 708-712, issn 0372-7610Article
Herstellung und Eigenschaften von dünnen Molybdänsilicidschichten, die durch Elektronenstrahlverdampfung abgeschieden wurden = Préparation et qualité des couches minces de siliciure de molybdène préparées par évaporation à l'aide d'un faisceau électronique = Preparation and properties of molybdenum silicide thin films made by electron beam evaporationKAUFMANN, C.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 4, pp 513-518, issn 0372-7610Article
High rate electron beam evaporationSCHILLER, S; JAESCH, G; NEUMANN, M et al.Thin solid films. 1983, Vol 110, Num 2, pp 149-164, issn 0040-6090Article
PHASE TRANSITIONS IN COMPOUND SEMICONDUCTOR FILMS TRIGGERED BY LASER IRRADIATIONANDREW R; BAUFAY L; PIGEOLET A et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 4862-4865; BIBL. 13 REF.Article
THE EFFECT OF CRYSTALLINITY ON THE MORPHOLOGY OF EVAPORATED AL-GE THIN FILMSKAPITULNIK A; RAPPAPORT ML; DEUTSCHER G et al.1981; J. PHYS., LETT.; ISSN 0302-072X; FRA; DA. 1981; VOL. 42; NO 24; PP. L541-L542; ABS. FRE; BIBL. 7 REF.Article
THIN CD1-XZNXS FILMS EVAPORATED BY ELECTRON BOMBARDMENT. I: STRUCTURE OF THE FILMSMBOW CM; LAPLAZE D; CACHARD A et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 3; PP. 203-209; BIBL. 14 REF.Article
DIFFUSION MARKER EXPERIMENTS WITH RARE-EARTH SILICIDES AND GERMANIDES: RELATIVE MOBILITIES OF THE TWO ATOM SPECIESBAGLIN JEE; D'HEURLE FM; PETERSSON CS et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2841-2846; BIBL. 31 REF.Article
PRACTICAL TROUBLESHOOTING OF VACUUM DEPOSITION PROCESSES AND EQUIPMENT FOR ALUMINIUM METALIZATIONHOFFMAN V.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 12; PP. 47-56; BIBL. 11 REF.Article
SILICON EPITAXY BY PULSED LASER ANNEALING OF EVAPORATED AMORPHOUS FILMS.HOONHOUT D; KERKDIJK CB; SARIS FW et al.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 66; NO 2; PP. 145-146; BIBL. 6 REF.Article
QUELQUES PROPRIETES DE COUCHES MINCES D'HEXABORURE DE LANTHANEBESSARABA VI; IVANCHENKO LA; PADERNO YU B et al.1977; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1977; NO 8; PP. 30-33; ABS. ANGL.; BIBL. 8 REF.Article
LATTICE STRUCTURE IN NI-SI COEVAPORATED FILMSHARRISON TR.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 2; PP. 460-462; BIBL. 9 REF.Article
THE GROWTH OF POLYCRYSTALLINE SILICON ON MOLYBDENUM, TANTALUM, TUNGSTEN AND THEIR DISILICIDESCAMPISI GJ; BEVOLO AJ; SHANKS HR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1714-1719; BIBL. 17 REF.Article
TRANSMISSION ELECTRON MICROSCOPY OF THE FORMATION OF NICKEL SILICIDESFOLL H; HO PS; TU KN et al.1982; PHILOS. MAG.; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 1; PP. 31-47; BIBL. 17 REF.Article
SUBMICRON POLYCRYSTAL SILICON FILM SOLAR CELLSFANG PH; SCHUBERT CC; KINNIER JH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 256-258; BIBL. 13 REF.Article
CONTAMINATION EFFECTS IN THERMALLY EVAPORATED FILMS OF IRON AND IRON OXIDESUNDGREN JE; NATH P; NILSSON HTG et al.1979; J. VAC. SCI. TECHNOL.; USA; DA. 1979; VOL. 16; NO 5; PP. 1542-1547; BIBL. 27 REF.Article
MASS ANALYZER USING ELECTRON-BEAM-GUIDING TYPE ION SOURCEKISHI T; YAMADA I; TAKAGI T et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 12; PP. 1517-1520; BIBL. 21 REF.Article
ETUDE DE LA COMPOSITION DE PHASES, DE LA STRUCTURE ET DES PROPRIETES ELECTRIQUES DES COUCHES MINCES DU SYSTEME TI-AL2O3OSIPOV KA; BOROVICH TL; GOLOVIN VI et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1978; VOL. 14; NO 1; PP. 68-70; H.T. 1; BIBL. 4 REF.Article
ZUR SILICIDBILDUNG IN DUENNEN MOLYBDAEN- UND WOLFRAMSCHICHTEN = FORMATION DU SILICIURE DANS LES COUCHES MINCES DE MOLYBDENE OU DE TUNGSTENEOERTEL B; KURZE HJ; HAUEISEN H et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 1; PP. 129-135; ABS. ENG; BIBL. 12 REF.Article