INVESTIGATION ON THE PULSE-HEIGHT DISTRIBUTION OF ELECTRON AVALANCHES GENERATED BY THERMIONICALLY EMITTED ELECTRONS IN A PROPORTIONAL COUNTERCHATTERJEE SD; SASTRI RC; DHARA M et al.1978; INDIAN J. PHYS., A; IND; DA. 1978; VOL. 52; NO 2; PP. 100-113; BIBL. 21 REF.Article

PARTICULARITES DE LA MULTIPLICATION PAR AVALANCHE DU COURANT DANS LES STRUCTURES TRANSISTORS AU GERMANIUMGAVRILOV LE.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 1; PP. 177-187; BIBL. 18 REF.Article

CRITICAL DAMPING CONDITION IN IMPATT DIODESSAXENA P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. K207-K210; BIBL. 6 REF.Article

MODELE MATHEMATIQUE D'UN TRANSISTOR BIPOLAIRE POUR DES REGIMES DE FONCTIONNEMENT ORDINAIRE ET EN AVALANCHEDYAKONOV VP; SAMOJLOVA TA.1979; RADIOTEKHNIKA; SUN; DA. 1979; VOL. 34; NO 10; PP. 13-18; BIBL. 10 REF.Article

TOWNSEND COEFFICIENTS OF GASES IN AVALANCHE COUNTERSBRUNNER G.1978; NUCL. INSTRUM. METHODS; NLD; DA. 1978; VOL. 154; NO 1; PP. 159-163; BIBL. 8 REF.Article

INTRINSIC RESPONSE TIME AND RELATED QUANTITIES DESCRIBING SEMICONDUCTOR AVALANCHES.VAN IPEREN BB; GOEDBLOED JJ.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 15; PP. 448-449; BIBL. 8 REF.Article

ESTIMATION DES DOMAINES DE LOCALISATION DE LA MULTIPLICATION DES TROUS DANS LE CLAQUAGE PAR AVALANCHE DES HETEROJONCTIONSDATIEV KM.1977; ACTA PHYS. ACAD. SCI. HUNGAR.; HUN; DA. 1977; VOL. 42; NO 3; PP. 189-194; BIBL. 5 REF.Article

HIGH FLUX OPERATION OF THE GATED MULTISTEP AVALANCHE CHAMBERBRESKIN A; CHARPAK G; MAJEWSKI S et al.1980; NUCL. INSTRUM. METHODS; ISSN 0029-554X; NLD; DA. 1980; VOL. 178; NO 1; PP. 11-25; BIBL. 15 REF.Article

APPLICABILITY OF A SIMPLE PARALLEL PLATE AVALANCHE DETECTOR TO PHOTOFISSION EXPERIMENTSGUNTHER W; HUBER K; KNEISSL U et al.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 163; NO 2-3; PP. 459-462; BIBL. 16 REF.Article

AVALANCHE BREAKDOWN AS A NONLINEAR WAVE.AGU M; KINOSHITA T.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 5; PP. 835-839; BIBL. 6 REF.Article

PRELIMINARY TESTS OF A NEW SHOWER DETECTORDRUKIER AK.1980; NUCL. INSTRUM. METHODS; NLD; DA. 1980; VOL. 173; NO 2; PP. 259-260; BIBL. 3 REF.Article

AVALANCHE BREAKDOWN IN COMPLEMENTARY DIODES.HOLWAY LH JR.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 4; PP. 411-415; BIBL. 3 REF.Article

DEVELOPMENT OF THE PRIMARY ELECTRON AVALANCHE UNDER AN INDUCED TOROIDAL ELECTRIC FIELD IN NITROGENFUJIWARA T; SHIMADA T; SUGITA K et al.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 7; PP. 1217-1224; BIBL. 11 REF.Article

PUNCH-THROUGH GATE PROTECTION OF M.O.S. DEVICESMILLER CA; POOLE SJ.1982; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 2; PP. 187-193; BIBL. 6 REF.Article

A NEW METHOD TO CONTROL IMPACT IONIZATION RATE RATIO BY SPATIAL SEPARATION OF AVALANCHING CARRIERS IN MULTILAYERED HETEROSTRUCTURESTANOUE T; SAKAKI H.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 67-70; BIBL. 14 REF.Article

AUGMENTATION DE LA LIMITE EN FREQUENCE DE LA GENERATION DANS LES DIODES DE GUNN AVEC DES INHOMOGENEITESBROVKIN YU N; VYSHEMIRSKAYA NA; KOSTYLEV SA et al.1979; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1979; VOL. 22; NO 10; PP. 89-92; BIBL. 5 REF.Article

AN AVALANCHING OPTOELECTRONIC MICROWAVE SWITCHKIEHL RA.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 533-539; BIBL. 10 REF.Article

DISTRIBUTION SPECTRALE DE LA LUMINESCENCE DU MESOPLASMA DE JONCTIONS P-N DE SILICIUM A AVALANCHE SOUS POLARISATION CONSTANTEBALODIS YA K; PURITIS T YA.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 5; PP. 9-13; ABS. ANGL.; BIBL. 14 REF.Article

ETUDE DES CARACTERISTIQUES COURANT-TENSION D'UNE JONCTION P-N CONTROLABLE EN REGIME DE CLAQUAGE D'AVALANCHESHIRSHOV YU M; FROLOV OS; GAL'KA IM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 26; PP. 90-95; BIBL. 7 REF.Article

CURRENT GAIN DEGRADATION INDUCED BY EMITTER-BASE AVALANCHE BREAKDOWN IN SILICON PLANAR TRANSISTORS.MELIA AJ.1976; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1976; VOL. 15; NO 6; PP. 619-623; BIBL. 15 REF.Article

A TWO-DIMENSIONAL MODEL OF THE AVALANCHE EFFECT IN MOS TRANSISTORSSCHUTZ A; SELBERHERR S; POTZL HW et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 177-183; BIBL. 12 REF.Article

THE APPEARANCE OF A NEGATIVE CONDUCTANCE AT THE SUBSTRATE OF A MOSFET EXHIBITING CHANNEL AVALANCHINGRUCKER LM; VAN DER ZIEL A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 909-910; BIBL. 5 REF.Article

INFLUENCE DE LA DEFOCALISATION STATIQUE SUR LA MODELISATION DU TRANSISTOR BIPOLAIRE EN REGIME DYNAMIQUEGLINEUR A.1980; REV. HF; ISSN 0035-3248; BEL; DA. 1980; VOL. 11; NO 7; PP. 247-257; BIBL. 9 REF.Article

ETUDE DU PROCESSUS D'AVALANCHE DANS UNE STRUCTURE METAL-DIELECTRIQUE-SEMICONDUCTEURPLOTNIKOV AF; SHUBIN V EH; KRAVCHENKO AB et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 49-55; BIBL. 10 REF.Article

BREAKDOWN WALKOUT IN PLANAR P-N JUNCTIONSSARASWAT KC; MEINDL JD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 813-819; BIBL. 10 REF.Article