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Results 1 to 25 of 285

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THE INFLUENCE OF A LIGHT BEAM ON THE ELECTROREFLECTANCE SPECTRA OF GERMANIUM.KISIEL A; OLES B.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 1; PP. K35-K39; BIBL. 15 REF.Article

A MODEL FOR INTERBAND ELECTROREFLECTANCE IN POLYVALENT NEARLY-FREE-ELECTRON METALS, WITH APPLICATION TO PBLYNCH DW.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 103; NO 2-3; PP. 289-300; BIBL. 38 REF.Article

ELECTROREFLECTANCE SPECTRUM OF INAS IN THE RANGE OF E0 AND E0+DELTA 0 TRANSITIONS.LUKES F.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 84; NO 2; PP. K113-K117; BIBL. 13 REF.Article

SYMMETRY ANALYSIS OF THE E2 STRUCTURES IN SI BY LOW-FIELD ELECTROREFLECTANCE.KONDO K; MORITANI A.1977; PHYS. REV., B.; U.S.A.; DA. 1977; VOL. 15; NO 2; PP. 812-815; BIBL. 29 REF.Article

SYMMETRY ANALYSIS AND UNIAXIAL-STRESS EFFECT ON THE LOW-FIELD ELECTROREFLECTANCE OF SI FROM 3.0 TO 4.0 EV.KONDO K; MORITANI A.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 4; PP. 1577-1592; BIBL. 1 P. 1/2Article

TEMPERATURE DEPENDENCE OF THE L6C-GAMMA 6C ENERGY GAP IN GALLIUM ANTIMONIDEJOULLIE A; ZEIN EDDIN A; GIRAULT B et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 928-930; BIBL. 39 REF.Article

SPECTRES A OSCILLATIONS MULTIPLES DE L'ELECTROREFLEXION DU GERMANIUMNEIZVESTNYJ IG; OVSYUK NN; SINYUKOV MP et al.1976; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 24; NO 7; PP. 393-397; BIBL. 6 REF.Article

OPTICAL AND ELECTROOPTICAL PROPERTIES OF THE INTERFACE OF MEDIA.TIMASHEV SF; KRYKIN MA.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 1; PP. 67-76; ABS. ALLEM.; BIBL. 21 REF.Article

ON THE INTERPRETATION OF ELLIPSOMETRIC STUDIES ON GAP (110) SINGLE CRYSTALS.LUKES F.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 49; NO 1; PP. 344-348; BIBL. 13 REF.Article

SURFACE PHENOMENA IN THE POLARIZATION-DEPENDENT ELECTROREFLECTANCE SPECTRA OF SITYAGAI VA; SNITKO OV; EVSTIGNEEV AM et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 87; NO 2; PP. 613-618; ABS. RUS; BIBL. 11 REF.Article

ELECTROREFLECTANCE OF SI-MOS.MISAWA K; MORITANI A; NAKAI J et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1309-1316; BIBL. 24 REF.Article

Automatic topographic examination of semiconductors using modulated reflectanceAUBEL, J. L; PIDICK, G; REDDY, U. K et al.Review of scientific instruments. 1985, Vol 56, Num 2, pp 268-272, issn 0034-6748Article

BANDGAP OF IN GA AS P QUATERNARY ALLOYYAMAZOE Y; NISHINO T; HAMAKAWA Y et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 8; PP. 1473-1479; BIBL. 32 REF.Article

PHOTOCOURANT ET ELECTROREFLEXION DES CRISTAUX DEFECTUEUX DE SELENIURE DE CADMIUMMASHCHENKO VE; VANTSAN VM; GUSACHENKO AG et al.1977; ZH. PRIKL. SPEKTROSK., BELORUS. S.S.R.; S.S.S.R.; DA. 1977; VOL. 26; NO 2; PP. 337-341; BIBL. 19 REF.Article

CENTRES LOCALISES DANS LES CRISTAUX DE SILICATE DE BISMUTHERMAKOV MG; KHOMICH AV; PEROV PI et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 5; PP. 424-429; BIBL. 16 REF.Article

ELECTROREFLECTANCE OF INN SEMIMETALLIC THIN FILMSTYAGAI VA; SNITKO OV; EVSTIGNEEV AM et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 589-594; ABS. RUS; BIBL. 13 REF.Article

REFLECTANCE MODULATION BY A VIBRATING CIRCULAR MEMBRANE OF PIEZORESISTIVE SEMICONDUCTORLAL MN; DAS BL.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3834-3836; BIBL. 20 REF.Article

THE APPEARANCE OF THE BULK PLASMON IN THIN SILVER OVERLAYERS MONITORED BY ELECTROCHEMICAL MODULATION SPECTROSCOPYKOETZ R; KOLB DM.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 97; NO 2-3; PP. 575-585; BIBL. 24 REF.Article

THE OBSERVATION OF A DIRECT ENERGY BAND GAP FOR CUINTE2 SINGLE CRYSTALS USING ELECTROREFLECTANCE TECHNIQUES.THWAITES MJ; TOMLINSON RD; HAMPSHIRE MJ et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 12; PP. 905-906; BIBL. 11 REF.Article

BAND-POPULATION INTERFERENCE PHENOMENA IN THE ELECTROREFLECTANCE OF NARROW-GAP SEMICONDUCTORS UNDER HEAVY SURFACE ACCUMULATION.BOTTKA N; JOHNSON DL; GLOSSER R et al.1977; PHYS. REV. B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2184-2194; BIBL. 22 REF.Article

DETERMINATION DE LA CONCENTRATION D'IMPURETES CHARGEES DANS LE SILICIUM PAR LA METHODE DE REFLEXION ELECTROOPTIQUEBEGISHEV AR; GALIEV GB; KAPAEV VV et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 3; PP. 426-431; BIBL. 14 REF.Article

OBSERVATION OF SUPERLATTICE EFFECTS OF THE ELECTRONIC BANDS OF MULTILAYER HETEROSTRUCTURESMENDEZ EE; CHANG LL; LANDGREN G et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 18; PP. 1230-1234; BIBL. 20 REF.Article

STUDY OF THE ELECTRO-REFLECTANCE OF KDPMATSUMOTO S; MATSUMOTO H; ONAKA R et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 49; NO 4; PP. 1469-1474; BIBL. 6 REF.Article

ON THE NATURE OF E1-TRANSITIONS IN GERMANIUM.HUMLICEK J.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 86; NO 1; PP. 303-310; ABS. ALLEM.; BIBL. 29 REF.Article

INTERBAND MASSES OF E1 AND E1+DELTA 1 EDGES IN GASB.JOULLIE AM; ALIBERT C; JOULLIE A et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 12; PP. 5384-5386; BIBL. 16 REF.Article

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