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Results 1 to 25 of 392

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Influence of spatially dependent perturbations on modulated reflectance and absorption of solidsASPNES, D. E; FROVA, A.Solid state communications. 1993, Vol 88, Num 11-12, pp 1061-1065, issn 0038-1098Article

Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy : A status reportKLAR, P. J; KARCHER, C; METZGER, B et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 7, pp 1208-1216, issn 0031-8965, 9 p.Conference Paper

Critical thickness of quantum well for observing Franz-Keldysh oscillationCHEN, R. B; LU, Y.-T.Solid state communications. 2000, Vol 114, Num 3, pp 117-120, issn 0038-1098Article

Characterization of δ-doped silicon by electrolyte electroreflectanceFELDMANN, B; RÖPPISCHER, H; KIUNKE, W et al.Physica status solidi. A. Applied research. 1995, Vol 152, Num 1, pp 171-177, issn 0031-8965Conference Paper

Electroreflectance of porous layers obtained by stain etching of laser modified siliconHOLINEY, R. Yu; FEDORENKO, L. L; MATVEEVA, L. A et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 22, pp 2875-2879, issn 0022-3727Article

Electroreflectance anisotropy at the WSe2 layer semiconductorMARTINEZ CHAPARRO, A; SALVADOR, P; COLL, B et al.Surface science. 1993, Vol 293, Num 3, pp 160-164, issn 0039-6028Article

Contactless electroreflectance of GaInN/AlInN multi quantum wells : The issue of broadening of optical transitionsKUDRAWIEC, R; GLADYSIEWICZ, M; MOTYKA, M et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 392-395, issn 0959-8324, 4 p.Conference Paper

An infrared study of the few-layer graphene | ionic liquid interface: Reintroduction of in situ electroreflectance spectroscopyOLL, Ove; ROMANN, Tavo; LUST, Enn et al.Electrochemistry communications. 2014, Vol 46, pp 22-25, issn 1388-2481, 4 p.Article

An electroreflectance approach to study out the puzzling state of myoglobin in a DDAB film on a pyrolytic graphite electrode surfaceSAGARA, Takamasa; SAKAI, Tomomi; NAGATANI, Hirohisa et al.Electrochemistry communications. 2007, Vol 9, Num 8, pp 2018-2022, issn 1388-2481, 5 p.Article

Temperature dependence of the band edge excitonic transitions of a wurtzite-type Cd0.925Be0.075Se mixed crystalHUANG, P. J; HUANG, Y. S; FIRSZT, F et al.Solid state communications. 2006, Vol 137, Num 1-2, pp 82-86, issn 0038-1098, 5 p.Article

Electrolyte electroreflectance study of carbon monoxide adsorption on polycrystalline silver and gold electrodesCUESTA, A; LOPEZ, N; GUTIERREZ, C et al.Electrochimica acta. 2003, Vol 48, Num 20-22, pp 2949-2956, issn 0013-4686, 8 p.Conference Paper

Study of semiconductor surfaces and interfaces using electromodulationPOLLAK, Fred H.Surface and interface analysis. 2001, Vol 31, Num 10, pp 938-953, issn 0142-2421Article

Structural defects in semiconductors with diamond-like structureZONSHAIN, E. M; PETROVA, O. A; PASLAVSKII, V. V et al.Inorganic materials. 1995, Vol 31, Num 8, pp 1024-1025, issn 0020-1685Article

Dust off your foundry's silica control measuresSCHOLZ, Robert C; EUVRARD, Leroy JR.Modern casting. 2001, Vol 91, Num 11, pp 45-48, issn 0026-7562Article

Gigantic optical nonlinearity in one-dimensional Mott-Hubbard insulatorsKISHIDA, H; MATSUZAKI, H; OKAMOTO, H et al.Nature (London). 2000, Vol 405, Num 6789, pp 929-932, issn 0028-0836Article

Charge trapping and built-in field studies in electroreflectance of a UN+ GaAs structureMIOC, S. L; GARLAND, J. W; BENNETT, B. R et al.Semiconductor science and technology. 1996, Vol 11, Num 4, pp 521-524, issn 0268-1242Article

Experimental study and numerical modelling of the nickel oxide coating on the Ni(111) surfaceVALLINO, N; GAILLET, L; LAHOCHE, L et al.Surface & coatings technology. 2000, Vol 135, Num 1, pp 98-108, issn 0257-8972Article

Composition and temperature dependence of the direct band GaP of GaAs1-xNx (0≤x≤0.0232) using contactless electroreflectanceMALIKOVA, L; POLLAK, F. H; BHAT, R et al.Journal of electronic materials. 1998, Vol 27, Num 5, pp 484-487, issn 0361-5235Article

Superlattices of the Ge-Ge1-xSix type fabricated by the hydride methodKUZNETSOV, O. A; ORLOV, L. K; DROZDOV, YU. N et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 10, pp 878-883, issn 1063-7826Article

An electrolyte electroreflectance study of ReS2HO, C. H; HUANG, Y. S; TIONG, K. K et al.Solid state communications. 1998, Vol 109, Num 1, pp 19-22, issn 0038-1098Article

Electroreflectance study of the E1 and E0 optical transitions in thin Ge/Si superlatticesRODRIGUES, P. A. M; CERDEIRA, F; CARDONA, M et al.Solid state communications. 1993, Vol 86, Num 10, pp 637-642, issn 0038-1098Article

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wellsKUDRAWIEC, R; GLADYSIEWICZ, M; MISIEWICZ, J et al.Microelectronics journal. 2009, Vol 40, Num 4-5, pp 805-808, issn 0959-8324, 4 p.Conference Paper

Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layerDRABINSKA, Aneta; PAKULA, Krzysztof; BARANOWSKI, Jacek M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 7, pp 1308-1312, issn 0031-8965, 5 p.Conference Paper

Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectanceSHOKHOVETS, S; FUHRMANN, D; GOLDHAHN, R et al.Thin solid films. 2004, Vol 450, Num 1, pp 163-166, issn 0040-6090, 4 p.Conference Paper

Reflectance and electrolyte electroreflectance from gold nanorod arrays embedded in a porous alumina matrixMCMILLAN, B. G; BERLOUIS, L. E. A; CRUICKSHANK, F. R et al.Journal of electroanalytical chemistry (1992). 2007, Vol 599, Num 2, pp 177-182, issn 1572-6657, 6 p.Article

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