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A HIGH RESOLUTION NEGATIVE ELECTRON RESIST BY IMAGE REVERSALOLDHAM WG; HIEKE E.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 217-219; BIBL. 3 REF.Article

EXPERIMENTAL OBSERVATIONS OF NEARLY MONODISPERSIVE POLYSTYRENE AS NEGATIVE ELECTRON RESISTSLAI JH; SHEPHERD LT.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 696-698; BIBL. 5 REF.Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

IMPROVED DRY ETCHING RESISTANCE OF ELECTRON-BEAM RESIST BY ION EXPOSURE PROCESSMOCHIJI K; WADA Y; OBAYASHI H et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2556-2559; BIBL. 9 REF.Article

ELECTRON-BEAM LITHOGRAPHY OF CHLORINATED POLYSTYRENES WITH NARROW MOLECULAR WEIGHT DISTRIBUTIONSFEIT ED; STILLWAGON LE.1980; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1980; VOL. 20; NO 16; PP. 1058-1063; BIBL. 13 REF.Article

RESOLUTION LIMITS OF PMMA RESIST FOR EXPOSURE WITH 50 KV ELECTRONSBROERS AN.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 1; PP. 166-170; BIBL. 23 REF.Article

BREVET PROCEDE D'ELECTROLITHOGRAPHIE PERMETTANT D'AMELIORER LA SENSIBILITE DES RESINES DE MASQUAGE ET MASQUE OBTENU PAR UN TEL PROCEDE1979; ; FRA; DA. 1979-01-05; FR/A1/2.389.922; DEP.77 13344/1977-05-03Patent

RADIATION DEGRADATION OF POLY(METHACRYLATES).LAI JH; HELBERT JH.1978; MACROMOLECULES; USA; DA. 1978; VOL. 11; NO 3; PP. 617-619; BIBL. 15 REF.Article

Improvement of mask-limited yield with a vote-taking lithographic schemeFU, C.-C; DAMERON, D. H.IEEE electron device letters. 1984, Vol 5, Num 10, pp 398-400, issn 0741-3106Article

A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON BEAM RESISTYAMADA M; HATTORI S; MORITA S et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2598-2602; BIBL. 22 REF.Article

PROXIMITY FUNCTION CALCULATION OF PATTERNS IN POSITIVE ELECTRON RESISTSBRANDT J; LAI JH; SHEPHERD LT et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 813-822; BIBL. 12 REF.Article

A DRY ETCHING TECHNIQUE USING ELECTRON BEAM RESIST-PBSYAMAZAKI T; WATAKABE Y; SUZUKI Y et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1859-1861; BIBL. 2 REF.Article

THERMALLY-REACTED POLY(METHACRYLAMIDE) AS A POSITIVE ELECTRON BEAM RESIST.MATSUDA S; TSUCHIYA S; HONMA M et al.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 410-413; BIBL. 9 REF.; (PHOTOPOLYM. CONF. 4; ELLENVILLE, N.Y.; 1976)Conference Paper

THREE DIMENSIONAL BEHAVIOR OF NEGATIVE ELECTRON RESISTS.HEIDENREICH RD; KAMMLOTT GW.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 377-380; BIBL. 5 REF.; (PHOTOPOLYM. CONF. 4; ELLENVILLE, N.Y.; 1976)Conference Paper

Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

CHROMIUM ETCHING CHARACTERISTICS USING A PLANAR TYPE PLASMA REACTORSAEKI H; WATAKABE Y; TOYODA H et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1049-1063; BIBL. 4 REF.Article

THE SYNTHESIS, CHARACTERIZATION, EVALUATION, AND PROCESSING OF SELECTED CYCLO-OLEFIN SULFONE COPOLYMERS AS ELECTRON BEAM RESISTS.HIMICS RJ; KAPLAN M; DESAI NV et al.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 406-409; BIBL. 11 REF.; (PHOTOPOLYM. CONF. 4; ELLENVILLE, N.Y.; 1976)Conference Paper

MATERIAUX POUR MICROLITHOGRAPHIEERANIAN A; DUBOIS JC.sdJEP 10. JOURNEES D'ETUDES DES POLYMERES. 10/1981/SAINT-MATHIEU DE TREVIERS; FRA; S.L.: GROUPE FRANCAIS D'ETUDES ET D'APPLICATIONS DES POLYMERES; DA. S.D.; VOL. 2; PP. 1-20; H.T. 17; BIBL. 5 P.Conference Paper

THE INCORPORATION OF HEAVY METALS INTO DIAZO-TYPE ELECTRON BEAM RESISTSLEWIS CR.1983; JOURNAL OF POLYMER SCIENCE. POLYMER CHEMISTRY EDITION; ISSN 0360-6376; USA; DA. 1983; VOL. 21; NO 5; PP. 1543-1550; BIBL. 19 REF.Article

IODINATED POLYSTYRENE: AN ION-MILLABLE NEGATIVE RESISTSHIRAISHI H; TANIGUCHI Y; HORIGOME S et al.1980; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1980; VOL. 20; NO 16; PP. 1054-1057; BIBL. 10 REF.Article

CROSSLINKED POLY(2,2,2-TRICHLOROETHYL METHACRYLATE) AS A HIGHLY SENSITIVE POSITIVE ELECTRON RESISTTADA T.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1635-1636; BIBL. 6 REF.Article

AN INVESTIGATION OF SPIN COATING OF ELECTRON RESISTSLAI JH.1979; POLYM. ENGNG SCI.; USA; DA. 1979; VOL. 19; NO 15; PP. 1117-1121; BIBL. 8 REF.Article

Mounting assembly for preparation of electrodes from totally insoluble conducting polymersCZERWINSKI, A; SCHRADER, J. R; MARK, H. B. JR et al.Analytical chemistry (Washington, DC). 1984, Vol 56, Num 6, pp 1039-1041, issn 0003-2700Article

Polymer materials for microlithography: electron beam resistsPETHRICK, R. A.Progress in rubber and plastics technology. 1987, Vol 3, Num 2, pp 11-22, issn 0266-7320Article