au.\*:("ELLIMAN, R. G")
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Role of electronic processes in epitaxial recrystallization of amorphous semiconductorsWILLIAMS, J. S; ELLIMAN, R. G.Physical review letters. 1983, Vol 51, Num 12, pp 1069-1072, issn 0031-9007Article
P-type doping of GaAs by carbon implantationJIANG, H; ELLIMAN, R. G; WILLIAMS, J. S et al.Journal of electronic materials. 1994, Vol 23, Num 4, pp 391-396, issn 0361-5235Article
Single-step implant isolation of p+-InP with 5-MeV O ionsRIDGWAY, M. C; JAGADISH, C; ELLIMAN, R. G et al.Applied physics letters. 1992, Vol 60, Num 24, pp 3010-3012, issn 0003-6951Article
Arsenic dopant influence upon the sintering behavior of the aluminium-polysilicon interface = Influence du dopant arsenic sur le comportement au frittage de l'interface aluminum-polysiliciumHERBOTS, N; VAN DE WIELE, F; LOBET, M et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 3, pp 645-652, issn 0013-4651Article
Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistorsPEARTON, S. J; REN, F; JAGADISH, C et al.Journal of applied physics. 1992, Vol 71, Num 10, pp 4949-4954, issn 0021-8979Article
Cd1-xMnxTe/Cd1-yMyte superlattices by low temperature MOCVDPAIN, G. N; RUSSO, S. P; DICKSON, R. S et al.Materials forum (Rushcutters Bay). 1991, Vol 15, Num 1, pp 35-43, issn 0883-2900Conference Paper
Thermally induced epitaxial recrystallization of NiSi2 and CoSi2RIDGWAY, M. C; ELLIMAN, R. G; THORNTON, R. P et al.Applied physics letters. 1990, Vol 56, Num 20, pp 1992-1994, issn 0003-6951Article
Ion beam induced epitaxial crystallization of NiSi2RIDGWAY, M. C; ELLIMAN, R. G; WILLIAMS, J. S et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2117-2119, issn 0003-6951Article
Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteriesRUDAWSKI, N. G; YATES, B. R; HOLZWORTH, M. R et al.Journal of power sources. 2013, Vol 223, pp 336-340, issn 0378-7753, 5 p.Article
Single-energy, MeV important isolation of multilayer III-V device structuresELLIMAN, R. G; RIDGWAY, M. C; JAGADISH, C et al.Journal of applied physics. 1992, Vol 71, Num 2, pp 1010-1013, issn 0021-8979Article
Solid phase epitaxial growth of amorphized InPRIDGWAY, M. C; PALMER, G. R; ELLIMAN, R. G et al.Applied physics letters. 1991, Vol 58, Num 5, pp 487-489, issn 0003-6951Article
Resistivity measurements of thin film iridum on siliconREEVES, G. K; LAWN, M. W; ELLIMAN, R. G et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3203-3206, issn 0734-2101Article
Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguidesPELANT, I; TOMASIUNAS, R; SIRUTKAITIS, V et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 1, issn 0022-3727, 015103.1-015103.5Article
Silicon nanocrystals in silica-Novel active waveguides for nanophotonicsJANDA, P; VALENTA, J; OSTATNICKY, T et al.Journal of luminescence. 2006, Vol 121, Num 2, pp 267-273, issn 0022-2313, 7 p.Conference Paper
Optical gain in different silicon nanocrystal systemsFAUCHET, P. M; RUAN, J; CHEN, H et al.Optical materials (Amsterdam). 2005, Vol 27, Num 5, pp 745-749, issn 0925-3467, 5 p.Conference Paper
Dose dependence of room temperature photoluminescence from Si implanted SiO2CHEYLAN, S; MANSON, N. B; ELLIMAN, R. G et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 213-216, issn 0022-2313Conference Paper
Defects and ion redistribution in implant-isolated GaAs-based device structuresPEARTON, S. J; REN, F; CHU, S. N. G et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 6580-6586, issn 0021-8979Article
Characterization of GaAs/Si/GaAs heterostructuresRAO, T. S; HORIKOSHI, Y; JAGADISH, C et al.Japanese journal of applied physics. 1992, Vol 31, Num 10, pp 3282-3286, issn 0021-4922, 1Article
Impurity-stimulated crystallization and diffusion in amorphous siliconNYGREN, E; POGANY, A. P; SHORT, K. T et al.Applied physics letters. 1988, Vol 52, Num 6, pp 439-441, issn 0003-6951Article
Graphene synthesis by C implantation into Cu foilsJAE SUNG LEE; CHAN WOOK JANG; JONG MIN KIM et al.Carbon (New York, NY). 2014, Vol 66, pp 267-271, issn 0008-6223, 5 p.Article
Nonvolatile-Memory Characteristics of AlO--Implanted Al2O3MIN CHOUL KIM; KIM, Sung; CHOI, Suk-Ho et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 837-839, issn 0741-3106, 3 p.Article
Oscillating cracks in glassy films on silicon substratesELLIMAN, R. G; SPOONER, M; DALL, T. D. M et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 31-33, pp 4893-4906, issn 1478-6435, 14 p.Article
Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonicsPELANT, I; OSTATNICKY, T; VALENTA, J et al.Applied physics. B, Lasers and optics (Print). 2006, Vol 83, Num 1, pp 87-91, issn 0946-2171, 5 p.Article
Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicaRIDGWAY, M. C; AZEVEDO, G. De M; ELLIMAN, R. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 9, pp 094107.1-094107.6, issn 1098-0121Article
Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAsJOHNSON, S. T; WILLIAMS, J. S; NYGREN, E et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6567-6569, issn 0021-8979Article
