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INFORME SOBRE LAS INVESTIGACIONES DE ARCILLA HECHAS EN LOS LABORATORIOS DE LA FACULTAD NACIONAL DE MINAS.ELLWANGER R.1966; BOL. GEOL.; COL; 1966, VOL. 14, P. 55 A 132Miscellaneous

The deposition and film properties of reactively sputtered titanium nitrideELLWANGER, R. C; TOWNER, J. M.Thin solid films. 1988, Vol 161, Num 1-2, pp 289-304, issn 0040-6090Article

A correlation of Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter-deposited titanium nitride thin filmsBURROW, B. J; MORGAN, A. E; ELLWANGER, R. C et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 6, pp 2463-2469, issn 0734-2101Article

Substructuring applied to the analysis of tall building structuresELLWANGER, R. J.Conquest of vertical space in the 21st century. International conference. 1997, pp 213-226, isbn 0-419-23300-8Conference Paper

A correlation of Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter-deposited titanium nitride thin filmsBURROW, B. J; MORGAN, A. E; ELLWANGER, R. C et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 6, pp 2463-2469, issn 0734-2101Article

Ultrahochmolekulares Polyethylene für Gelenkendoprothesen = Le polyéthylène à très haute masse moléculaire pour prothèses d'articulation implantés = Ultra high molecular polyethylene for articular endoprothesesEYERER, P; KURTH, M; ELLWANGER, R et al.Kunststoffe. 1987, Vol 77, Num 6, pp 617-622, issn 0023-5563Article

High-throughput low temperature tungsten deposition process for 0.25 μm technologyELST, W; ZOMEREN, A. V; BERENBAUM, D et al.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 427-428, isbn 0-7803-5403-6Conference Paper

The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argonBROADBENT, E. K; MORGAN, A. E; FLANNER, J. M et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6721-6726, issn 0021-8979Article

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