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GROWTH OF GAAS1-XPX* CRYSTALS BY PULLING FROM GALLIUM-RICH SOLUTIONSCERRINA F; MARGADONNA D; PERFETTI P et al.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 2; PP. 202-204; BIBL. 5 REF.Serial Issue

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF 35 MM DIAMETER SINGLE CRYSTALS OF GAPNYGREN SF.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 21-32; BIBL. 16 REF.Serial Issue

ETUDE DES PROPRIETES PROTECTRICES DES FONDANTS DANS LA FABRICATION DE INPMARBAKH AL; CHERNOKOV IV.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1738-1741; BIBL. 10 REF.Article

LIQUID ENCAPSULATED FLOATING ZONE MELTING OF GAAS.JOHNSON ES.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 249-256; BIBL. 12 REF.Article

GROWTH OF LOW STRAIN GAP BY LIQUID-ENCAPSULATION, VERTICAL-GRADIENT FREEZE TECHNIQUEBLUM SE; CHICOTKA RJ.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 588-589; BIBL. 5 REF.Serial Issue

DIRECT OBSERVATION OF DISLOCATIONS IN A LEC-GAP CRYSTAL BY LIGHT SCATTERING METHOD.TAJIMA M; IIZUKA T.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 4; PP. 651-654; BIBL. 17 REF.Article

CROISSANCE DE MONOCRISTAUX PROFILES DE COMPOSES SE DISSOCIANTEGOROV LP; MIL'VIDSKIJ MG; ZATULOVSKIJ LM et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 6; PP. 1273-1277; BIBL. 11 REF.Article

LEC GROWTH OF LARGE INP SINGLE CRYSTALS.ANTYPAS GA.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 1; PP. 174-176; BIBL. 8 REF.Article

ECART A LA STOECHIOMETRIE DES CRISTAUX DE INAS OBTENUS PAR LA METHODE D'ENCAPSULATION LIQUIDEMARBAKH AL; PERMINOVA LG.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 9; PP. 1560-1563; BIBL. 8 REF.Article

HIGH PRESSURE CZOCHRALSKI GROWTH OF FE1-XS (0<X <OU= 0.1) SINGLE CRYSTALS.BARRACLOUGH KG; GOEBEL H; MEYER A et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 101-106; BIBL. 12 REF.Article

X-RAY IMAGING TECHNIQUE FOR OBSERVING LIQUID ENCAPSULATION CZOCHRALSKI CRYSTAL GROWTH.PRUETT HD; LIEN SY.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 822-826; BIBL. 5 REF.Article

TOTAL OXYGEN CONTENT OF GALLIUM PHOSPHIDE GROWN BY THE CZOCHRALSKI TECHNIQUE USING LIQUID ENCAPSULATION.KIM CK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 243-245; BIBL. 11 REF.Article

LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS AND GAPRUSS MJ.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 8; PP. 29-32; BIBL. 15 REF.Serial Issue

LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS.BACHMANN KJ; BUEHLER E; SHAY JL et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 389-406; BIBL. 1 P. 1/2Article

EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM ARSENIDEFORNARI R; PAORICI C; ZANOTTI L et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 2; PP. 157-164; BIBL. 30 REF.Article

EFFECT OF MELT STOICHIOMETRY ON TWIN FORMATION IN LEC GAASCHEN RT; HOLMES DE.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2382-2383; BIBL. 5 REF.Article

PHOTOLUMINESCENCE EVALUATION OF SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUESWAMINATHAN V; VON NEIDA AR; CARUSO R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6471-6474; BIBL. 21 REF.Article

LEC GROWTH OF GASB SINGLE CRYSTALS USING BORIC OXIDEKATSUI A; UEMURA C.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 6; PP. L318-L320; BIBL. 6 REF.Article

GAAS DENDRITIC WEB GROWN BY LIQUID ENCAPSULATIONGOULD TA; STEWART AM.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 3; PP. 399-406; BIBL. 24 REF.Article

INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE CRYSTALSHOPKINS CG; DELINE VR; BLATTNER RJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 989-990; BIBL. 8 REF.Article

GROWTH OF DISLOCATION-FREE GALLIUM-PHOSPHIDE CRYSTALS FROM A STOICHIOMETRIC MELT.ROKSNOER PJ; HUIJBREGTS JMPL; VAN DE WIJGERT WM et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 40; NO 1; PP. 6-12; BIBL. 23 REF.Article

EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAASHOLMES DE; CHEN RT; YANG J et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 5; PP. 419-421; BIBL. 13 REF.Article

STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAASHOLMES DE; CHEN RT; ELLIOTT KR et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 46-48; BIBL. 15 REF.Article

MONOLITHIC MICROWAVE AMPLIFIERS FORMED BY ION IMPLANTATION INTO LEC GALLIUM ARSENIDE SUBSTRATESDRIVER MC; SHING KUO WANG; PRZYBYSZ JX et al.1981; IEEE TRANS. ELECTRON; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 2; PP. 191-196; BIBL. 6 REF.Article

EFFICIENT GREEN ELECTROLUMINESCENT DIODES BY "DOUBLE-BIN" LIQUID-PHASE EPITAXYLADANY I; KRESSEL H.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 9; PP. 1101-1102Serial Issue

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