THEORY OF THE ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION.FRENSLEY WR; KROEMER H.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2642-2652; BIBL. 34 REF.Article

SURFACE BAND BENDING EFFECTS ON PHOTOLUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODESANDO K; YAMAMOTO A; YAMAGUCHI M et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 6; PP. 1107-1112; BIBL. 10 REF.Article

RIGID BAND ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR DEVICESMARSHAK AH; SHIBIB MA; FOSSUM JG et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 293-298; BIBL. 38 REF.Article

ONE-DIMENSIONAL BAND CALCULATIONSKILLINGBECK J.1980; J. PHYS. A; GBR; DA. 1980; VOL. 13; NO 3; PP. L35-L37; BIBL. 4 REF.Article

THEORY OF EXTRINSIC AND INTRINSIC HETEROJUNCTIONS IN THERMAL EQUILIBRIUMVON ROSS O.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1069-1075; BIBL. 22 REF.Article

MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILINGKROEMER H; WU YI CHIEN; HARRIS JS JR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 295-297; BIBL. 6 REF.Article

AFGL TRACE GAS COMPILATION.ROTHMAN LS; CLOUGH SA; MCCLATCHEY RA et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 507; BIBL. 4 REF.Article

BAND-POPULATION INTERFERENCE PHENOMENA IN THE ELECTROREFLECTANCE OF NARROW-GAP SEMICONDUCTORS UNDER HEAVY SURFACE ACCUMULATION.BOTTKA N; JOHNSON DL; GLOSSER R et al.1977; PHYS. REV. B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2184-2194; BIBL. 22 REF.Article

A METHOD FOR DETERMINING ENERGY GAP NARROWING IN HIGHLY DOPED SEMICONDUCTORSNEUGROSCHEL A; SHING CHONG PAO; LINDHOLM FA et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 894-902; BIBL. 49 REF.Article

BREMSSTRAHLUNG ISOCHROMAT SPECTROSCOPY USING A MODIFIED XPS APPARATUSLANG JK; BAER Y.1979; REV. SCI. INSTRUM.; USA; DA. 1979; VOL. 50; NO 2; PP. 221-226; BIBL. 26 REF.Article

MANY-VALLEY INTERACTIONS IN N-TYPE SILICON INVERSION LAYERS.DORDA G; EISELE I; GESCH H et al.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 1785-1798; BIBL. 35 REF.Article

STUDY OF THE INTERACTION OF A LOCAL BOSON MODE WITH AN ELECTRONIC SYSTEM WITH FINITE FERMI LEVELURE JE.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 21; PP. 4515-4521; BIBL. 9 REF.Article

A COHERENT SITE APPROXIMATION FOR TRANSPORT IN DISORDERED SYSTEMSHALPERN V.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 24; PP. L827-L830; BIBL. 10 REF.Article

ELECTRONIC PROPERTIES OF PB_1-XHG_XS-SI HETEROJUNCTIONSSHARMA NC; CHOPRA KL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 869-873; BIBL. 21 REF.Article

THE SIS TUNNEL EMITTER: A THEORY FOR EMITTERS WITH THIN INTERFACE LAYERSDE GRAAFF HC; DE GROOT JG.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1771-1776; BIBL. 14 REF.Article

INFLUENCE DU SUBSTRAT SEMI-ISOLANT SUR LES CARACTERISTIQUES ELECTRIQUES DES TRANSISTORS A EFFET DE CHAMP A L'ARSENIURE DE GALLIUMTRANDUC HENRI.1978; ; FRA; DA. 1978; 2180; 154 P.; 29 CM; BIBL. 38 REF.; TH. 3EME CYCLE: ELECTRONIQUE, MATERIAUX ET COMPOSANTS ACTIFS/TOULOUSE/1978Thesis

MISE EN PARAMETRES DU TRANSFERT RADIATIF D'ENERGIE DANS LA BANDE 15MU DE CO₂ DE L'ATMOSPHERE TERRESTRE DANS LA COUCHE DE PERTURBATION DE L'EQUILIBRE THERMODYNAMIQUE LOCALKUTEPOV AA.1978; IZVEST. AKAD. NAUK S.S.S.R., FIZ. ATMOSF. OKEANA; S.S.S.R.; DA. 1978; VOL. 14; NO 2; PP. 216-218; BIBL. 7 REF.Article

BIPOLAR TRANSISTORS.1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 673-677; ABS. FRE; BIBL. 7 REF.Conference Paper

PHOTOVOLTAIC EFFECT OBSERVED ON THE CONSTRUCTION OF METAL-AMORPHOUS IN_XSE_1-X THIN FILM-SNO₂ SYSTEM.TRAN TRI NANG; MATSUSHITA T; OKUDA M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 2; PP. 253-258; BIBL. 9 REF.Article

ENERGY LEVELS FOR PLATINUM AND PALLADIUM IN SILICON MEASURED BY THE DARK TRANSIENT CAPACITANCE TECHNIQUE.PUGNET M; BARBOLLA J; BRABANT JC et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 533-543; ABS. FR.; BIBL. 28 REF.Article

A REVIEW OF THE MERITS OF DIRECT AND INDIRECT GAP SEMICONDUCTORS FOR ELECTROLUMINESCENCE DEVICES.BRANDER RW.1972; REV. PHYS. TECHNOL.; G.B.; DA. 1972; VOL. 3; NO 3; PP. 145-194; BIBL. 3 P. 1/2Article

HALL EFFECT IN GRAPHITE AND ITS RELATION TO THE TRIGONAL WARPING OF THE ENERGY BANDS. II: THEORETICALSUGIHARA K; ONO S; OSHIMA H et al.1982; JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; JPN; DA. 1982; VOL. 51; NO 6; PP. 1900-1903; BIBL. 15 REF.Article

THE CNDO/53 CRYSTAL ORBITAL MODEL: DEFINITION AND APPLICATION TO POLYACETYLENEFORD WK; DUKE CB; PATON A et al.1982; JOURNAL OF CHEMICAL PHYSICS; ISSN 0021-9606; USA; DA. 1982; VOL. 77; NO 9; PP. 4564-4572; BIBL. 35 REF.Article

GA_1-XAL_XAS BAND STRUCTURE FROM I-V, C-V MEASUREMENTS ON SCHOTTKY DIODESDILIGENTI A; PELLEGRINI B; SALARDI G et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 799-800; BIBL. 4 REF.Article

BAND THEORY OF METALLIC POLYACETYLENEKASOWSKI RV; CARUTHERS E; HSU WY et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 10; PP. 676-679; BIBL. 24 REF.Article