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DETERMINATION OF VALLEY SPLITTING IN (100) SI INVERSION LAYERSENGLERT T.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 9; PP. 893-897; BIBL. 9 REF.Article

A PLASMA RESONANCE STUDY OF VALLEY TRANSFER IN (001) SI INVERSION LAYERSENGLERT T; TSUI DC; LOGAN RA et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 3; PP. 483-486; BIBL. 16 REF.Article

TRANSPORT MEASUREMENTS ON INP INVERSION METAL-OXIDE SEMICONDUCTOR TRANSISTORSKLITZING KV; ENGLERT T; FRITZSCHE D et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5893-5897; BIBL. 23 REF.Article

OBSERVATION OF VALLEY SPLITTING IN (111) N-TYPE SILICON INVERSION LAYERSENGLERT T; TSUI DC; LANDWEHR G et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 12; PP. 1167-1169; BIBL. 13 REF.Article

AN INVESTIGATION OF THE VALLEY SPLITTING IN N-CHANNEL SILICON (100) INVERSION LAYERSNICHOLAS RJ; VON KLITZING K; ENGLERT T et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 1; PP. 51-55; BIBL. 23 REF.Article

DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN SPECTROSCOPYENGLERT T; ABSTREITER G; PONTCHARRA J et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 31-33; BIBL. 10 REF.Article

MAGNETOPHONON RESONANCES OF THE TWO-DIMENSIONAL ELECTRON GAS IN GAAS/ALGAAS HETEROSTRUCTURESENGLERT T; TSUI DC; PORTAL JC et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 8; PP. 1301-1304; BIBL. 13 REF.Article

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETSKRESS ROGER E; NICHOLAS RJ; ENGLERT T et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 23; PP. L619-L622; BIBL. 13 REF.Article

SURFACE QUANTUM OSCILLATIONS IN SILICON (100) INVERSION LAYERS UNDER UNIAXIAL PRESSUREENGLERT T; LANDWEHR G; VON KLITZING K et al.1978; PHYS. REV., B; USA; DA. 1978; PP. 794-802; BIBL. 23 REF.Article

COMMENTS ON THE HOLE MASS IN SILICON INVERSION LAYERS.LANDWEHR G; BANGERT E; VON KLITZING K et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 1031-1035; BIBL. 13 REF.Article

OBSERVATION OF CYCLOTRON RESONANCE IN THE PHOTOCONDUCTIVITY OF TWO-DIMENSIONAL ELECTRONSMAAN JC; ENGLERT T; TSUI DC et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 609-610; BIBL. 8 REF.Article

OBSERVATION OF MAGNETOPHONON RESONANCES IN A TWO-DIMENSIONAL ELECTRONIC SYSTEMTSUI DC; ENGLERT T; CHO AY et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 5; PP. 341-344; BIBL. 16 REF.Article

SURFACE QUANTUM OSCILLATIONS IN N-TYPE (100) SILICON INVERSION LAYERS ON SAPPHIRE.VON KLITZING K; ENGLERT T; LANDWEHR G et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 10; PP. 703-706; BIBL. 11 REF.Article

HOT-CARRIER EFFECTS IN HIGH MAGNETIC FIELDS IN SILICON INVERSION LAYERS AT LOW TEMPERATURES: P CHANNEL.HESS K; ENGLERT T; NEUGEBAUER T et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3652-3659; BIBL. 25 REF.Article

INFLUENCE OF THE SURFACE ON THE GALVANOMAGNETIC PROPERTIES OF TELLURIUM.ENGLERT T; VON KLITZING K; SILBERMANN R et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. 119-127; ABS. ALLEM.; BIBL. 15 REF.Article

Using the second harmonic from a Nd : YAG as a probe beam for determination of free electron density in a plasma induced by the fundamentalENGLERT, T. J; BEIK, M. A.Review of scientific instruments. 1990, Vol 61, Num 12, pp 3783-3786, issn 0034-6748Article

A laboratory investigation of electro-optic Kerr effect for detection of electric transmission line faultsENGLERT, T. J; CHOWDHURY, B. H; GRIGSBY, E et al.IEEE transactions on power delivery. 1991, Vol 6, Num 3, pp 979-985, issn 0885-8977, 7 p.Conference Paper

Second-harmonic photons from the interaction of free electrons with intense laser radiationENGLERT, T. J; RINEHART, E. A.Physical review. A, General physics. 1983, Vol 28, Num 3, pp 1539-1545, issn 0556-2791Article

CMT : conductivity-modulated transistorWILAMOWSKI, B. M; ENGLERT, T. J.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 11, pp 2600-2606, issn 0018-9383Article

Induced optical reflectivity by local variation of conductivity in MIS structuresENGLERT, T. J; BLESI, J. W.IEEE journal of quantum electronics. 1990, Vol 26, Num 3, pp 506-511, issn 0018-9197Article

Observation of oscillatory linewidth in the cyclotron resonance of GaAs-AlxGa1-xAs heterostructuresENGLERT, T; MAAN, J. C; UIHLEIN, C et al.Solid state communications. 1983, Vol 46, Num 7, pp 545-548, issn 0038-1098Article

Quantum transport of electrons confined in a thin GaAs layer by an impurity space charge potential un high magnetic fieldsMAAN, J. C; ENGLERT, T; UIHLEIN, C et al.Solid state communications. 1983, Vol 47, Num 5, pp 383-386, issn 0038-1098Article

A study of intersubband scattering in GaAs/AlxGa1-xAs heterostructures by means of a parallel magnetic fieldENGLERT, T; MAAN, J. C; TSUI, D. C et al.Solid state communications. 1983, Vol 45, Num 11, pp 989-991, issn 0038-1098Article

Investigation of RF breakdowns on the MILO : Special issue on high power microwave generationSHIFFLER, D; BACA, G; ENGLERT, T et al.IEEE transactions on plasma science. 1998, Vol 26, Num 3, pp 304-311, issn 0093-3813Article

Increasing the RF energy per pulse of an RKO : Special issue on high power microwave generationHENDRICKS, K. J; HAWORTH, M. D; ENGLERT, T et al.IEEE transactions on plasma science. 1998, Vol 26, Num 3, pp 320-325, issn 0093-3813Article

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