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MODELL DES ENHANCEMENT-TRANSISTORS UNTER BERUECKSICHTIGUNG DER SUBSTRATVORSPANNUNG = MODELE REPRESENTATIF DU TRANSISTOR MOS A ENRICHISSEMENT TENANT COMPTE D'UNE TENSION DE POLARISATION DU SUBSTRATPOSDZIECH G.1981; NACHRITENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1981; VOL. 31; NO 5; PP. 181-183; ABS. RUS/ENG/FRE; BIBL. 4 REF.Article

EMPIRISCHES MODELL DES ENHANCEMENT-TRANSISTORS MIT KURZEM KANAL = MODELE EMPIRIQUE POUR LE TRANSISTOR A ENRICHISSEMENT A CANAL COURTPOSDZIECH G.1980; NACHR.-TECH., ELEKTRON.; DDR; DA. 1980; VOL. 30; NO 3; PP. 111-112; ABS. RUS/ENG; BIBL. 11 REF.Article

COMPUTER GERECHTE MODELLFAMILIE FUER INTEGRIERTE MOS-TRANSISTOREN. I: ANREICHERUNGSTRANSSISTOR = FAMILLE DE MODELES POUR TRANSISTORS MOS INTEGRES ADAPTEE A L'ORDINATEUR. I. TRANSISTOR A ENRICHISSEMENTDIENER KH; FISCHER P; KRAUSS M et al.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 10; PP. 414-417; BIBL. 18 REF.Article

NEW STRUCTURE OF ENHANCEMENT-MODE GAAS MICROWAVE M.O.S.F.E.T.MIMURA T; ODANI K; YOKOYAMA N et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 500-502; BIBL. 7 REF.Article

PHOTOENHANCED ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; SEARLE TM; AUSTIN IG et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 573-582; BIBL. 11 REF.Article

EIN ENTWURFSORIENTIERTES, RECHNERGERECHTES SCHALTUNGSMODELL FUER DEN MOS-ANREICHERUNGSTRANSISTOR = MODELE DE CIRCUIT POUR LE CALCUL SUR ORDINATEUR DU TRANSISTOR MOS A ENRICHISSEMENTKRAUSS M.1978; NACH.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 1; PP. 10-11; BIBL. 3 REF.Article

FEMTO JOULE LOGIC CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET.MUTA H; SUZUKI S; YAMADA K et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1023-1027; BIBL. 6 REF.Article

MIM GATE FET: NEW GAAS ENHANCEMENT-MODE TRANSISTORKOHN E; DORTU JM.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 434-435; BIBL. 2 REF.Article

BORON PROFILES USING HEAVY PREDEPOSITIONS FOR P-MOS ENHANCEMENT. MODE DEVICES.STRUDWICK MN; LADBROOKE PH.1977; MONITOR; AUSTRAL.; DA. 1977; VOL. 38; NO 10; PP. 166-168; BIBL. 7 REF.Article

SINGLE-DEVICE-WELL MOSFET'SHAMDY EZ; ELMASRY MI; EL MANSY YA et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 322-327; BIBL. 11 REF.Article

SIMULATION OF IMPURITY FREEZEOUT THROUGH NUMERICAL SOLUTION OF POISSON'S EQUATION WITH APPLICATION TO MOS DEVICE BEHAVIORJAEGER RC; GAENSSLEN FH.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 914-920; BIBL. 14 REF.Article

THE CHARACTERISTICS OF AN ENHANCEMENT MODE YFETMOK TD; SALAMA CAT.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 631-633; BIBL. 4 REF.Article

V-GROOVE MOS (VMOS) ENHANCEMENT LOAD LOGIC.HOLMES FE.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 775-780; BIBL. 6 REF.Article

IN0.53 GA0.47 AS FET'S WITH INSULATOR-ASSISTED SCHOTTKY GATESO'CONNOR P; PEARSALL TP; CHENG KY et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 64-66; BIBL. 16 REF.Article

ANOMALOUS INVERSION CHANNEL FORMATION IN ENHANCEMENT-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD EFFECT TRANSISTORSSHINODA Y; KOBAYASHI T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7033-7038; BIBL. 13 REF.Article

GAAS MOSFET HIGH-SPEED LOGICYOKOYAMA N; MIMURA T; KUSAKAWA H et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 483-486; BIBL. 12 REF.Article

A SIMPLE CURRENT MODEL FOR SHORT-CHANNEL IGFET AND ITS APPLICATION TO CIRCUIT SIMULATIONDANG LM.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 436-445; BIBL. 15 REF.Article

LOW-TEMPERATURE OPERATION OF BIPOLAR AND MOS DEVICESOOSAKA F; NAKAMURA T.1978; FUJITSU SCI. TECH. J.; JPN; DA. 1978; VOL. 14; NO 3; PP. 53-76; BIBL. 15 REF.Article

PROPAGATION DELAY TIME AND DELAY-POWER PRODUCT OF A SMALL-SIZED DSA-ED GATE CIRCUITHAYASHI Y.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 5; PP. 726-728; BIBL. 4 REF.Article

ENHANCEMENT OF RECOVERY OF LEGIONELLA PNEUMOPHILA FROM CONTAMINATED RESPIRATORY TRACT SPECIMENS BY HEATEDELSTEIN PH; SNITZER JB; BRIDGE JA et al.1982; JOURNAL OF CLINICAL MICROBIOLOGY; ISSN 0095-1137; USA; DA. 1982; VOL. 16; NO 6; PP. 1061-1065; BIBL. 15 REF.Article

AN ACCURATE AND SIMPLE MOSFET MODEL FOR COMPUTER- AIDED DESIGNHANAFI HI; CAMNITZ LH; DALLY AJ et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 882-891; BIBL. 12 REF.Article

ENHANCEMENT- AND DEPLETION-MODE VERTICAL-CHANNEL M.O.S. GATED THYRISTORSBALIGA BJ.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 645-647; BIBL. 5 REF.Article

MIS STRUCTURES BASED ON SPIN-ON SIO2 ON GAASMA TP; MIYAUCHI K.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 88-90; BIBL. 22 REF.Article

A SIMPLE CURRENT MODEL FOR SHORT-CHANNEL IGFET AND ITS APPLICATION TO CIRCUIT SIMULATIONDANG LM.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 358-367; BIBL. 15 REF.Article

ENHANCEMENT-MODE ION-IMPLANTED INP F.E.T.S.GLEASON KR; DIETRICH HB; BARK ML et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 19; PP. 643-644; BIBL. 2 REF.Article

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