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kw.\*:("EPITAXIAL FILM")

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METHODES D'INTERFEROMETRIE INFRAROUGE POUR LA MESURE DES PARAMETRES DES STRUCTURES EPITAXIALES AU SILICIUM AVEC UNE COUCHE CACHEEBANKOVSKIJ YU V; VOLKOVA LV; KOKIN AA et al.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 140-145; BIBL. 3 REF.Article

EMPLOI DE L'ABSORPTION A DEUX PHOTONS POUR ETUDIER LES HETEROSTRUCTURES EPITAXIQUES A PLUSIEURS COUCHESDVORNIKOV DP; KONNIKOV SG; PERSHIN VV et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 12; PP. 2355-2362; BIBL. 17 REF.Article

SILICON EPITAXIAL WAFER PROFILING USING THE MERCURY-SILICON SCHOTTKY DIODE DIFFERENTIAL CAPACITANCE METHODSCHAFFER PS; LALLY TR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 229-233; BIBL. 5 REF.Article

CARRIER LIFETIMES IN SILICON EPITAXIAL LAYERS DEPOSITED ON OXYGEN-IMPLANTED SUBSTRATESDAS K; SHORTHOUSE GP; BUTCHER JB et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 139-140; BIBL. 9 REF.Article

ELECTRICAL PROPERTIES OF SNTE EPITAXIAL FILMS ON MICA SUBSTRATESANTHANAM S; CHAUDHURI AK.1983; PHYSICA. B + C; ISSN 511463; NLD; DA. 1983; VOL. 115; NO 2; PP. 156-160; BIBL. 27 REF.Article

EXCESS CONCENTRATION, ELECTRON AND HOLE CURRENTS IN AN EPITAXIAL EMITTERKOERSELMAN H; POORTER T.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 681-686; BIBL. 4 REF.Article

OPTIMISATION DES PROCEDES DE PRODUCTION DE STRUCTURES AUTOEPITAXIQUES DE SILICIUMILYUNIN OK; PETRENKO VR; MOVSHITS BI et al.1978; CVETN. METALLY; SUN; DA. 1978; NO 12; PP. 55-57; BIBL. 12 REF.Article

CONFERENCE ON SOLID STATE DEVICES. 8. PROCEEDINGS; TOKYO; 1976.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 1-564; BIBL. DISSEM.Conference Paper

MESURES PAR TOPOGRAPHIE RX DES VARIATIONS LOCALES DE DISTANCE ET D'ORIENTATION ENTRE LES PLANS RETICULAIRES DES COUCHES EPITAXIQUESNITTONO O; SHIMIZU S.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 10; PP. 351-357; ABS. ANGL.; BIBL. 9 REF.Article

CHARACTERIZATION OF SEEDED-LATERAL EPITAXIAL LAYER BY MICROPROBE REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONOHKURA M; ICHIKAWA M; MIYAO M et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1089-1090; BIBL. 11 REF.Article

KU-BAND FLAT-PROFILE SI-IMPATT DIODES WITH 10-PERCENT EFFICIENCYLEISTNER D; FREYER J.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 12; PP. 1553-1554; BIBL. 8 REF.Article

HYPERABRUPT EPITAXIAL TUNING DIODES.JACKSON DM JR; DEMASSA TA.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 485-490; BIBL. 2 REF.Article

REVELATION DE LA NON UNIFORMITE EN CONCENTRATION DANS LES COUCHES EPITAXIALES AU SILICIUM PAR UNE METHODE DE DECAPAGE SELECTIFGROTTE AM; DUBROVINA OF; LEVCHENKO IM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 25; PP. 36-40; BIBL. 3 REF.Article

NUMERICAL CONFIRMATION OF PALMBERG'S CRITERION.KANAJI T; KAGOTANI T; URANO T et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 11; PP. 2257-2258; BIBL. 7 REF.Article

FOUR-COEFFICIENT WEAK-FIELD MAGNETORESISTANCE MEASUREMENTS ON (111)-ORIENTED EPITAXIAL N-TYPE PBTE FILMS AT 4.2 KALLGAIER RS; ABBUNDI RJ; HOUSTON B et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 941-943; BIBL. 13 REF.Article

MBE EVAPORATION SOURCE FITTED WITH SHUTTER AND WATER-COOLED JACKETBOSACCHI A; FRANCHI S; ALLEGRI P et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 3; PP. 897-898; BIBL. 5 REF.Article

EFFECTS OF MATERIAL PROPERTIES AND OVERLAY PROCESSING VARIATIONS ON MAGNETIC BUBBLE DEVICE PERFORMANCEJOHNSON WA; HAGEDORN FB; WOLFE R et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1808-1814; BIBL. 20 REF.Article

MECANISME DE CLAQUAGE SECONDAIRE DANS LES TRANSISTORS PLANARS EPITAXIAUX AVEC UNE STRUCTURE SANS DEFAUTSBAJZDRENKO AA; PROT'KO LP.1980; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1980; NO 31; PP. 57-61; BIBL. 9 REF.Article

DESIGN CONSIDERATIONS FOR MOLECULAR BEAM EPITAXY SYSTEMSLUSCHER PE; COLLINS DM.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 2; NO 1-2; PP. 15-32; BIBL. 28 REF.Article

PLANARIZED SOLID-STATE EPITAXIAL GROWTH OF SI AND ITS EFFECT ON SCHOTTKY BARRIER DIODES.REITH TM; SULLIVAN MJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 177-179; BIBL. 16 REF.Article

MACLAGE DE COUCHES EPITAXIQUES DE BIPOLYAKOV SM; LAVERKO EN; YAGODKIN VM et al.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 863-865; H.T. 1; BIBL. 8 REF.Article

ISOLATION CHARACTERISTICS IN SELECTIVELY O+ AND CR+ IMPLANTED GAASNOJIMA S.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. K9-K12; BIBL. 5 REF.Article

INFLUENCE DE LA COMPENSATION SUR LA LUMINESCENCE LIMITE DE L'ARSENIURE DE GALLIUM FORTEMENT DOPEARNAUDOV BG; DOMANEVSKIJ DS; EVTIMOVA SK et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 4; PP. 607-610; BIBL. 10 REF.Article

OPTIMUM DOPING PROFILE OF POWER MOSFET EPITAXIAL LAYERXING BI CHEN; CHENMING HU.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 985-987; BIBL. 7 REF.Article

SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERSBEAN JC; SADOWSKI EA.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 137-142; BIBL. 28 REF.Article

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