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VACUUM CLEAVAGE DEVICE FOR MICAREICHELT K.1973; REV. SCI. INSTRUM.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 243-244Serial Issue

X-RAY PERFECTION AND RESIDUAL DEFECTS IN GADOLINIUM GALLIUM GARNET SUBSTRATESBELT RF; MOSS JP; LATORE JR et al.1973; MATER. RES. BULL.; U.S.A.; DA. 1973; VOL. 8; NO 4; PP. 357-367; BIBL. 11 REF.Serial Issue

CHEMICAL POLISHING OF GARNETS WITH PHOSPHORIC ACIDMILLER DC.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 499-507; BIBL. 13 REF.Serial Issue

PROBLEMES D'EPITAXIE EN DISCUSSIONDISTLER GI.1974; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1974; VOL. 38; NO 7; PP. 1424-1429; H.T. 1; BIBL. 38 REF.Article

PHENOMENES DE GERMINATION ET CROISSANCE CRISTALLINEZBEREA I.1975; STUD. CERC. FIZ.; ROMAN.; DA. 1975; VOL. 27; NO 3; PP. 253-265; ABS. ANGL.; BIBL. 27 REF.Article

ZUR KINETIK VON PHOSPHATIERUNGSPROZESSEN = CINETIQUE DE LA PHOSPHATATIONGEBHARDT M.1972; OBERFLAECHE-SURF.; SCHWEIZ.; DA. 1972; VOL. 13; NO 11; PP. 261-267; ABS. FR.; BIBL. 10 REF.Serial Issue

COSTRUZIONE E CARATTERIZZAZIONE DI DISPOSITIVI LASER A SEMICONDUTTORE A DOPPIA ETEROGIUNZIONE. = CONSTRUCTION ET CARACTERISTIQUES DES DISPOSITIFS LASER A SEMICONDUCTEUR A DOUBLE HETEROJONCTIONDONZELLI G; FLORES C; RANDONE G et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 279-288; BIBL. 16 REF.Article

DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESSJASTRZEBSKI L; IPRI AC; CORBOY JF et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 2; PP. 32-35; BIBL. 11 REF.Article

ORIENTATION EPITAXIQUE LORS DE LA GERMINATION ET DE LA COALESCENCEKHOLYANSKIJ VA.1974; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1974; VOL. 19; NO 6; PP. 1252-1256; BIBL. 6 REF.Article

EPITAXY.GEBHARDT M.1973; NORTH-HOLL. SER. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 1; PP. 105-142; BIBL. 1 P. 1/2; (CRYST. GROWTH. INT. SUMMER SCH.; NOORDWIJKERHOUT, NETH.; 1971)Conference Paper

EPITAXIE VON PLATIN AUF STRONTIUMBARIUMNIOBAT = EPITAXIE DE PT SUR NIOBATE DE SR-BABOHM J; STAHR STAHR WILKE KT.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 1-3; PP. 179-182; ABS. ANGL.; BIBL. 9 REF.Serial Issue

APPLICATION OF ELECTRON-TRANSPARENT (111) SILVER PLATELETS AS SUBSTRATES IN EPITAXIAL STUDIESSNYMAN HC; OLSEN GH.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 889-891; BIBL. 14 REF.Serial Issue

CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY.CHO AY; DIXON RW; CASEY HC JR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 501-503; BIBL. 15 REF.Article

DOUBLE-HETEROSTRUCTURE PBSNTE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH CW OPERATION UP TO 114 K.WALPOLE JN; CALAWA AR; HARMAN TC et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 552-554; BIBL. 16 REF.Article

EFFECT OF THERMAL ETCHING ON SILICON EPITAXIAL GROWTH BY VACUUM SUBLIMATION.KIMURA A; LEE CA.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 20; PP. 901-905; H.T. 2; BIBL. 18 REF.Article

EPITAXIAL SILICON SOLAR CELL.DALAL VL; KRESSEL H; ROBINSON PH et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1283-1285; BIBL. 11 REF.Article

OBSERVATION DE LA STRUCTURE DES JOINTS DE GRAINS DANS DES LAMES MINCES BICRISTALLINES PRODUITES PAR UNE NOUVELLE TECHNIQUE.COSANDEY F; KANG SK; BAUER CL et al.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4.53-C4.55; ABS. ANGL.; BIBL. 3 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS.CASEY HC JR; CHO AY; BARNES PA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 467-470; BIBL. 11 REF.Article

GROWTH OF A MONOCRYSTALLINE OXIDE LAYER ON MOLYBDENUM FIELD EMITTERS INDUCED BY HIGH-ELECTRIC FIELDSOKUYAMA F.1974; SURF. SCI.; NETHERL.; DA. 1974; VOL. 43; NO 1; PP. 293-296; BIBL. 3 REF.Article

ETUDE ET REALISATION DE JONCTIONS A EFFET TUNNEL SUR GERMANIUM SELON UNE TECHNIQUE COLLECTIVE PLANE.VRAHIDES M.1974; RAPP. C.E.A.; FR.; DA. 1974; NO 4509; PP. 1-78; ABS. ANGL.; BIBL. 2 P. 1/2Article

LASER A INJECTION EMETTANT UN RAYONNEMENT DE COULEUR JAUNE, A IN1-XGAXP(XV0,63) (J=5900 A, 77OK), REALISE PAR EPITAXIE EN PHASE LIQUIDEGITCHENS VR; GOLON'YAK NN; LI M KH et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 12; PP. 2418-2424; BIBL. 15 REF.Article

ETUDE D'APPLICATIONS DES DEPOTS EN PHASE VAPEUR AVEC APPORT DE COMPOSANTS EN FLUX SEPARES A LA REALISATION DE MATERIAUX FERRIMAGNETIQUESGREMILLET; GOULIN.1972; DGRST-7072570; FR.; DA. 1972; PP. 1-12; H.T. 9; BIBL. 8 REF.; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

ZUR EPITAXIE VON CALCIUMPHOSPHATEN AUF KOLLAGEN UND APATIT = EPITAXIE DU PHOSPHATE DE CALCIUM SUR COLLAGENE ET APATITEGEBHARDT M; MUNZENBERG KJ.1972; BIOMINERALISATION; DTSCH.; DA. 1972; VOL. 6; PP. 66-69; ABS. ANGL.; BIBL. 7 REF.; (INT. SYMP. PROBL. BIOMINER.; MAINZ; 1970)Conference Paper

MONOLITHIC GA1-XINXAS DIODE LASERS.DOERBECK FH; LAWLEY KL; BLUM FA et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 464-467; BIBL. 5 REF.Article

OBSERVATION PAR SPECTROMETRIE AUGER ET DIFFRACTION D'ELECTRONS LENTS DU MECANISME DE CROISSANCE DE FE SUR LA SURFACE (001) DE MGOKANATIC T; MAMEDA JI; KAGOTANI T et al.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 2; PP. 45-53; ABS. ANGL.; BIBL. 18 REF.Article

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