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LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB0-85SN0-15 TE DIODE LASER WITH CONTROLLED CARRIER CONCENTRATIONORON M; ZUSSMAN A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 7-9; BIBL. 8 REF.Article

SYMMETRIC SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS WITH LOW THRESHOLD AND NARROW BEAM DIVERGENCE BY M.B.E.TSANG WT.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 25-26; PP. 939-941; BIBL. 8 REF.Article

SINGLE-TRANSVERSE-MODE INJECTION LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR BEAM EPITAXY.LEE TP; CHO AY.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 164-166; BIBL. 17 REF.Article

LOW THRESHOLD CURRENT LEAD-TELLURIDE DIODE LASERS GROWN BY MOLECULAR BEAM EPITAXYPARTIN DL; LO W.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1579-1582; BIBL. 7 REF.Article

INFLUENCE OF GROWTH CONDITIONS ON THE THRESHOLD CURRENT DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXYCHO AY; CASEY HC JR; RADICE C et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 2; PP. 72-74; BIBL. 11 REF.Article

GRUNDSTRUKTUREN DER ANALOGEN SCHALTUNGSTECHNIK = LES STRUCTURES DE BASE DES CIRCUITS ANALOGIQUESMAASCH G.1978; RADIO FERSEHEN ELEKTRON.; DDR; DA. 1978; VOL. 27; NO 11; PP. 683-686; BIBL. 5 REF.Article

EPITAXIC RELATIONS BETWEEN COEXISTING PYROXENES.TARNEY J.1969; MINERAL. MAG.; GBR; 1969(3), VOL. 37, NUM. 0285, P. 115 A 122Miscellaneous

A GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN BEAMTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 134-137; BIBL. 14 REF.Article

CRYSTALLIZATION INVESTIGATION OF NISI2 THIN FILMSMAENPAA M; HUNG LS; TSAUR BY et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 289-301; BIBL. 15 REF.Article

THE EFFECT OF SUBSTRATE TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; REINHART FK; DITZENBERGER JA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 2; PP. 118-120; BIBL. 9 REF.Article

EPITAXY OF METAL DEPOSITS ON FOREIGN METAL SUBSTRATES = EPITAXIE DES DEPOTS METALLIQUES SUR DES SUBSTRATS DE NATURE DIFFERENTEPERALDO BICELLI L; RIVOLTA B.1981; SURF. TECHNOL.; ISSN 0376-4583; CHE; DA. 1981; VOL. 12; NO 4; PP. 361-376; BIBL. 2 P.Article

THE OBSERVATION OF MELT CARRYOVER IN THE ACTIVE LAYER OF LPE GAAS/BAA1AS DOUBLE-HETEROSTRUCTURE LASER MATERIALWAKEFIELD B.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 408-409; BIBL. 7 REF.Article

ETUDE DE L'AMELIORATION DU CONTROLE DE LA CROISSANCE D'HETEROJONCTIONS ALXGA1-XAS/GAAS EN FILM MINCE ( <OU= 0,1 MU M): HOMOGENEITE ET MORPHOLOGIE DE SURFACE.MESLAGE J.1977; DGRST-76070681; FR.; DA. 1977; PP. 1-29; (RAPP. FINAL, ACTION CONCERTEE: COM. COMPOSANTS CIRCUITS MICROMINIATURISES)Report

STRIPE-GEOMETRY LASER WITH IN-SITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR BEAM EPITAXYTSANG WT; LOGAN RA; DITZENBERGER JA et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 123-124; BIBL. 9 REF.Article

L'EQUILIBRE DE PHASE DANS LE SYSTEME PHASE LIQUIDE-PHASE SOLIDE AVANT L'HETEROEPITAXIE DES COUCHESBOLKHOVITYANOV YU B.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 6; PP. 1459-1462; BIBL. 8 REF.Article

LOW-THRESHOLD 1-3-MU M GAINASP/INP BURIED HETEROSTRUCTURE LASERS BY LIQUID PHASE EPITOXY AND METALORGANIC CHEMICAL VAPOR DEPOSITIONNG W; HONG CS; MANASEVIT H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 188-189; BIBL. 10 REF.Article

EFFECTS OF SUBSTRATE POTENTIAL ON INCOMMENSURATE EPITAXIES AT FINITE TEMPERATURESCHUI ST; WEEKS JD.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4413-4418; BIBL. 20 REF.Article

TRANSVERSE MODE STABILIZED ALGAAS/GAAS PLANO-CONVEX WAVEGUIDE LASER MADE BY A SINGLE-STEP LIQUIDE PHASE EPITAXYIDE Y; FURUSE T; SAKUMA I et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 2; PP. 121-123; BIBL. 7 REF.Article

CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR BEAM EPITAXYTSANG WT; WEISBUCH C; MILLER RC et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 9; PP. 673-675; BIBL. 12 REF.Article

HETEROJONCTIONS GA1-XALXAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

CRISTALLISATION EN PHASE GAZEUSE DU DIAMANT A PARTIR DE DIFFERENTS HYDROCARBURESUSPENSKAYA KS; FEDOSEEV DV.1979; IZV. AKAD. NAUK SSSR, SER. HIM.; SUN; DA. 1979; NO 12; PP. 2805-2807; BIBL. 7 REF.Article

GAAS1-YPY HETEROJUNCTION LASERS.CHIN R; HOLONYAK N JR; DHICHIJO H et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3991-3993; BIBL. 16 REF.Article

A MECHANISM FOR LIQUID-PHASE EPITAXIAL GROWTH OF NONEQUILIBRIUM COMPOSITIONS PRODUCING A COHERENT INTERFACE.HIRTH JP; STRING FELLOW GB.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1813-1814; BIBL. 14 REF.Article

REALISATION DE STRUCTURES EPITAXIALES FINES PAR EPITAXIE DU SILICIUM EN PHASE GAZEUSE.DUCHEMIN JP.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 1-11; ABS. ANGL.; BIBL. 2 P. 1/2; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

EPITAXIAL GROWTH OF DOLOMITE ON MICA.TOMAN K; TAYLOR PR.1974; AMER. MINERALOGIST; USA; 1974, VOL. 59, NUM. 0007-0008, P. 871 A 872Serial Issue

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