Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("ERBIUM . SILICIURE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 126

  • Page / 6

Export

Selection :

  • and

THE ANTIFERROMAGNETIC STRUCTURE OF ERCO2SI2 BY NEUTRON DIFFRACTIONYAKINTHOS JK; ROUTSI C; SCHOBINGER PAPAMANTELLOS P et al.1983; JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS; ISSN 0304-8853; NLD; DA. 1983; VOL. 30; NO 3; PP. 355-358; BIBL. 10 REF.Article

SURFACE MORPHOLOGY OF ERBIUM SILICIDELAU SS; PAI CS; WU CS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 77-80; BIBL. 9 REF.Article

Fabrication and structure of epitaxial Er silicide films on (111) SiARNAUD D'AVITAYA, F; PERIO, A; OBERLIN, J.-C et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2198-2200, issn 0003-6951, 3 p.Article

The effect of an interfacial oxide layer on the Schottky barrier height of Er-Si contactWU, C. S; SCOTT, D. M; LAU, S. S et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1330-1334, issn 0021-8979Article

MAGNETIC PROPERTIES OF TERNARY TCO2SI2 COMPOUNDS (T=-GD, TB, DY, HO, ER, Y)YAKINTHOS JK; ROUTSI C; IKONOMOU PF et al.1980; J. LESS-COMMON METALS; ISSN 0022-5088; NLD; DA. 1980; VOL. 72; NO 2; PP. 205-208; BIBL. 8 REF.Article

THE SCHOTTKY-BARRIER HEIGHT OF THE CONTACTS BETWEEN SOME RARE EARTH METALS (AND SILICIDES) AND P-TYPENORDE H; DE SOUSA PIRES J; D'HEURLE F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 865-867; BIBL. 22 REF.Article

Hindered electronic transport in two-dimensional metallic ErSi2 nanoscale islands on Si(111) : An STM studyBRIHUEGA, I; DUPONT-FERRIER, E; MALLET, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 20, pp 205309.1-205309.7, issn 1098-0121Article

STM and LEED observations of erbium silicide nanostructures grown on Si(1 0 0) surface: atomic-scale understandingsQUN CAI; JIANSHU YANG; YU FU et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 157-160, issn 0169-4332Conference Paper

Vacancy-induced electronic states in ErSi1.7(0001)STAUFFER, L; MHARCHI, A; SAINTENOY, S et al.The Journal of physics and chemistry of solids. 1997, Vol 58, Num 4, pp 567-572, issn 0022-3697Article

Growth and morphology of epitaxial ErSi1.7 films on Si(111)7×7 studied by scanning tunneling microscopyMARTIN-GAGO, J. A; GOMEZ-ROGRIGUEZ, J. M; VEUILLEN, J. Y et al.Surface science. 1996, Vol 366, Num 3, pp 491-500, issn 0039-6028Article

Transformations de phase magnétiques dans Er5Si3SAFONOV, V. N; GEL'D, P. V; VERESHCHAGIN, YU. A et al.Fizika tverdogo tela. 1983, Vol 25, Num 11, pp 3471-3473, issn 0367-3294Article

Symmetry properties of the ErSi1.7 valence band statesWETZEL, P; SAINTENOY, S; PIRRI, C et al.Solid state communications. 1995, Vol 93, Num 7, pp 557-561, issn 0038-1098Article

Electronic structure of erbium silicide ultra-thin filmsVEUILLEN, J.-Y; NGUYEN TAN, T. A; LOLLMAN, D. B. B et al.Surface science. 1993, Vol 293, Num 1-2, pp 86-92, issn 0039-6028Article

Infrared response of Pt/Si/ErSi1.7 heterostructure : tunable internal photoemission sensorPAHUN, L; CAPIDELLI, Y; ARNAUD D'AVITAYA, F et al.Applied physics letters. 1992, Vol 60, Num 10, pp 1166-1168, issn 0003-6951Article

Observation of a temporal evolution of defected epitaxial erbium silicide layers at room temperatureSAINTENOY, S; WETZEL, P; PIRRI, C et al.Solid state communications. 1996, Vol 98, Num 11, pp 1015-1020, issn 0038-1098, 5 p.Article

X-ray study of Eu-Si and Er-Si compoundsDAKHEL, A. A.Acta physica Polonica. A. 1986, Vol 70, Num 6, pp 791-795, issn 0587-4246Article

Effect of oxygen on the growth of epitaxial ErSi2-x films on Si by the reactive deposition techniqueGRIMALDI, M. G; RAVESI, S; SPINELLA, C et al.Applied surface science. 1996, Vol 102, pp 138-141, issn 0169-4332Conference Paper

Frequency shift of the Si-H vibrational modes on erbium silicide measured by HREELSANGOT, T; KOULMANN, J. J; BOLMONT, D et al.Surface science. 1996, Vol 368, Num 1-3, pp 190-195, issn 0039-6028Conference Paper

Hydrogen adsorption on erbium silicide surfaceSAINTENOY, S; WETZEL, P; PIRRI, C et al.Solid state communications. 1995, Vol 94, Num 9, pp 719-723, issn 0038-1098Article

Er-Si (Erbium-Silicon)OKAMOTO, H.Journal of phase equilibria. 1997, Vol 18, Num 4, issn 1054-9714, p. 403Article

Ion beam synthesis of heteroepitaxial erbium silicide layersWU, M. F; VANTOMME, A; PATTYN, H et al.Applied surface science. 1996, Vol 102, pp 184-188, issn 0169-4332Conference Paper

Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowiresLI ZHIGANG; LONG SHIBING; WANG CONGSHUN et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 13, pp 2839-2842, issn 0022-3727, 4 p.Article

Surface electronic structure of epitaxial √3×√3 R30° Er silicide on Si(111)SAINTENOY, S; WETZEL, P; PIRRI, C et al.Surface science. 1995, Vol 331-333, pp 546-551, issn 0039-6028, aConference Paper

Magnetic properties of ErRu2Si2, ErOs2Si2 and DyRu2Si2BLAISE, A; KMIEC, R; MALAMAN, B et al.Journal of magnetism and magnetic materials. 1994, Vol 135, Num 2, pp 171-182, issn 0304-8853Article

ION-BEAM-INDUCED MODIFICATION OF SILICIDE FORMATION IN RARE-EARTH METALS: ER-SI AND TB-SI SYSTEMS = MODIFICATION INDUITE PAR FAISCEAU D'ION DE LA FORMATION DE SILICIURE DANS LES LANTHANIDES: SYSTEMES ER-SI ET TB-SITSAUR BY; HUNG LS.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 922-924; BIBL. 11 REF.Article

  • Page / 6