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au.\*:("ESAKI L")

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LONG JOURNEY INTO TUNNELING.ESAKI L.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 6; PP. 825-831; BIBL. 34 REF.Article

DISCOVERY OF THE TUNNEL DIODE.ESAKI L.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 644-647; BIBL. 9 REF.Article

SUPERFINE STRUCTURES OF SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY.ESAKI L; CHANG LL.1976; C.R.C. CRIT. REV. SOLID STATE SCI.; U.S.A.; DA. 1976; VOL. 6; NO 2; PP. 195-208; BIBL. 1 P. 1/2Article

ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES.LUDEKE R; ESAKI L.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 11; PP. 653-656; BIBL. 10 REF.Article

TUNNEL TRIODE-A TUNNELING BASE TRANSISTOR.CHANG LL; ESAKI L.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 687-689; BIBL. 12 REF.Article

NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR "SUPERLATTICE".ESAKI L; CHANG LL.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 8; PP. 495-498; BIBL. 14 REF.Article

A bird's-eye view on the evolution of semiconductor superlattices and quantum wellsESAKI, L.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1611-1624, issn 0018-9197Article

SEMICONDUCTOR SUPERLATTICES BY MBE AND THEIR CHARACTERIZATIONCHANG LL; ESAKI L.1979; PROGR. CRYST. GROWTH. CHARACTER.; GBR; DA. 1979; VOL. 2; NO 1-2; PP. 3-14; BIBL. 63 REF.Article

GA1-XALXAS SUPERLATTICES PROFILED BY AUGER ELECTRON SPECTROSCOPY.LUDEKE R; ESAKI L; CHANG LL et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 9; PP. 417-419; BIBL. 11 REF.Article

INAS-GASB SUPERLATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMIMETAL TRANSITIONSAI HALASZ GA; ESAKI L; HARRISON WA et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 6; PP. 2812-2818; BIBL. 11 REF.Article

A NEW SEMICONDUCTOR SUPERLATTICE.SAI HALASZ GA; TSU R; ESAKI L et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 12; PP. 651-653; BIBL. 18 REF.Article

A NEW MECHANISM FOR NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SUPERLATTICES.DOHLER GH; TSU R; ESAKI L et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 3; PP. 317-320; BIBL. 8 REF.Article

SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR BEAM EPITAXY.CHANG LL; SEGMUELLER A; ESAKI L et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 39-41; BIBL. 15 REF.Article

X-RAY DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE.SEGMULLER A; KRISHNA P; ESAKI L et al.1977; J. APPL. CRYSTALLOGR.; DENM.; DA. 1977; VOL. 10; NO 1; PP. 1-6; BIBL. 18 REF.Article

RAMAN SCATTERING IN THE DEPLETION REGION OF GAAS.TSU R; KAWAMURA H; ESAKI L et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 2; PP. 321-324; ABS. ALLEM.; BIBL. 10 REF.Article

RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS.CHANG LL; ESAKI L; TSU R et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 593-595; BIBL. 12 REF.Article

RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS.CHANG LL; ESAKI L; TSU R et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 2; PP. 593-595; BIBL. 12 REF.Article

THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

FAR INFRARED IMPURITY ABSORPTION IN A QUANTUM WELLBASTARD G; MENDEZ EE; CHANG LL et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 4; PP. 367-369; BIBL. 7 REF.Article

STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPE OF INAS GROWN BY MOLECULAR BEAM EPITAXY ON GAAS SUBSTRATESCHIN AN CHANG; SERRANO CM; CHANG LL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 538-540; BIBL. 8 REF.Article

EFFECTS OF QUANTUM STATES ON THE PHOTOCURRENT IN A "SUPERLATTICE".TSU R; CHANG LL; SAI HALASZ GA et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 24; PP. 1509-1512; BIBL. 11 REF.Article

EXCITON BINDING ENERGY IN QUANTUM WELLSBASTARD G; MENDEZ EE; CHANG LL et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1974-1979; BIBL. 15 REF.Article

SEMIMETALLIC INAS-GASB SUPERLATTICES TO THE HETEROJONCTION LIMITCHANG LL; KAWAI NJ; MENDEZ EE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 1; PP. 30-32; BIBL. 9 REF.Article

RESONANCE ENHANCED UMKLAPP RAMAN PROCESSES IN GAAS-GA1-XALXAS SUPERLATTICES.SAI HALASZ GA; PINCZUK A; YU PY et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 6; PP. 381-384; BIBL. 17 REF.Article

TWO-DIMENSIONAL ELECTRONIC STRUCTURE IN INAS-GASB SUPERLATTICES.SAKAKI H; CHANG LL; SAI HALASZ GA et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 9; PP. 589-592; BIBL. 11 REF.Article

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