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INVESTIGATION OF THE MOLECULAR PROCESSES CONTROLLING CORROSION FAILURE MECHANISMS IN PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICESLUM RM; FEINSTEIN LG.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 1; PP. 15-31; BIBL. 12 REF.Article

GRENZEN DES STRESSTESTS. = LIMITES DE L'ESSAI D'ENDURANCEKOTTMANN A; BREMER J; KOLB K et al.1975; GAS- U. WASSERFACH, GAS ERDGAS; DTSCH.; DA. 1975; VOL. 116; NO 6; PP. 211-216; BIBL. 8 REF.Article

ENDURANCE AND RETENTION OF MNOS DEVICES OVER THE TEMPERATURE RANGE FROM -50OC TO +125OCJONES RV; BROWN WD.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 6; PP. 959-972; BIBL. 10 REF.Article

PROCEDURES FOR SELECTION OF SEMICONDUCTOR DIODES FOR USE IN UNDERSEA CABLE SYSTEMSABRAHAMSON IG; LEE ET; SLUTSKY EB et al.1972; I.E.E.E. TRANS. RELIABIL.; U.S.A.; DA. 1972; VOL. 21; NO 4; PP. 200-206; BIBL. 4 REF.Serial Issue

DEVELOPMENTS LIKELY TO IMPROVE THE RELIABILITY OF PLASTIC ENCAPSULATED DEVICES.JONES RO.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 273-278; BIBL. 2 REF.Article

BANC D'ESSAIS A GRANDE FIDELITE POUR TESTS D'ENDURANCE DE VOITURES AUTOMOBILESBERREBY JC; LECLERCQ Y.1981; TECH. CEM; ISSN 0040-1293; FRA; DA. 1981; NO 112; PP. 46-48Article

SPACE CHARGE EFFECTS IN MNOS MEMORY DEVICES AND ENDURANCE MEASUREMENTS.CRICCHI JR; BLAHA FC; FITZPATRICK MD et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 459-462; BIBL. 4 REF.Conference Paper

EFFECT OF GRAIN SIZE ON THE LIFE TIME OF ALUMINUM INTERCONNECTIONS.SAITO M; HIROTA S.1974; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1974; VOL. 22; NO 7-8; PP. 678-694; BIBL. 10 REF.Article

A MECHANISM FOR ENDURANCE FAILURE IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR DEVICE STRUCTURESPRYOR RW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3703-3704; BIBL. 6 REF.Article

GEWINNUNG VON ZUVERLAESSIGKEITSAUSSAGEN. = OBTENTION D'INDICATIONS SUR LA FIABILITEKKONARSKI D; EVERT KP.1975; NACHR.-TECH., ELECTRON.; DTSCH.; DA. 1975; VOL. 25; NO 10; PP. 367-370; ABS. RUSSE ANGL.; BIBL. 5 REF.Article

INFLUENCE DU VIEILLISSEMENT SUR LES CARACTERISTIQUES DE CELLULES ELECTROLUMINESCENTESWOJCIECHOWSKI J.1972; ARCH. ELEKTROTECH.; POLSKA; DA. 1972; VOL. 21; NO 82; PP. 901-917; ABS. RUSSE ANGL.; BIBL. 1 P.Serial Issue

EXPERIMENTAL DETERMINATION OF THE DURABILITY OF HV ARRESTERSST JEAN G; LATOUR Y; ROY M et al.1981; IEEE TRANS. POWER APPAR. SYST.; ISSN 0018-9510; USA; DA. 1981; VOL. 100; NO 3; PP. 1138-1147; BIBL. 8 REF.Article

9700-HOUR DURABILITY TEST OF A FIVE CENTIMETER DIAMETER ION THRUSTER.NAKANISHI S; FINKE RC.1974; J. SPACECR. ROCK.; U.S.A.; DA. 1974; VOL. 11; NO 8; PP. 560-566; BIBL. 8 REF.Article

EVALUATION OF TRANSFORMER LOADING ABOVE NAMEPLATE RATINGLAHOTI BD; FLOWERS DE.1981; IEEE TRANS. POWER APPAR. SYST.; ISSN 0018-9510; USA; DA. 1981; VOL. 100; NO 4; PP. 1989-1998; BIBL. 16 REF.Article

HYBRID CUITY FOR 300OC OPERATION.PALMER DW.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 3; PP. 252-257; BIBL. 5 REF.Article

FATIGUE THERMIQUE DES TRANSISTORS DE PUISSANCE 2N 3055 S ET BDY58.JUND C; PRIEUR M.1975; CNET-7245289; FR.; DA. 1975; PP. 1-14; (C. R. FINAL)Report

INSTALLATION POUR L'ESSAI DE CONDUCTEURS EMAILLESVALOVIC J.1975; ELEKTROIZOL. KABLOVA TECH.; CESKOSL.; DA. 1975; VOL. 25; NO 4; PP. 287-289; ABS. RUSSE ANGL. ALLEM.; BIBL. 2 REF.Article

BEDEUTUNG VON LANGZEITPRUEFUNGEN FUER ZUVERLAESSIGKEITSANGABEN BEI KONDENSATOREN. = SIGNIFICATION DES ESSAIS DE LONGUE DUREE POUR LA DETERMINATION DE L'ENDURANCE DES CONDENSATEURSACKMANN W.1974; ELEKTROTECH. Z., B; DTSCH.; DA. 1974; VOL. 26; NO 26; PP. 690-692; ABS. ANGL.; BIBL. 4 REF.Article

VORALTERUNG INTEGRIERTER SCHALTKREISE FUER DIE RECHENTECHNIK = LE VIEILLISSEMENT PREALABLE DES CIRCUITS INTEGRES POUR LA TECHNIQUE DE CALCULJANZSO L; GOBLOS I.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 5; PP. 208-209; ABS. RUS/ENG/FRE; BIBL. 3 REF.Article

LA SERVOVALVE AU SERVICE DES ESSAIS D'ENDURANCE DES VOITURES DE DEMAIN.1977; ENERG. FLUIDE; FR.; DA. 1977; NO 95; PP. 76-79Article

SUR LA CINETIQUE DU VIEILLISSEMENT DES DIODES ELECTROLUMINESCENTES ET DES LASERS A INJECTIONELISEEV PG.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 9; PP. 1655-1661; BIBL. 13 REF.Serial Issue

PHYSICAL INTERPRETATION OF THE TANTALUM CHIP CAPACITOR LIFE-TEST RESULTSLOH E.1980; I.E.E.E. TRANS. COMPON. HYBR. MANUFG TECHNOL.; ISSN 0148-6411; USA; DA. 1980; VOL. 3; NO 4; PP. 647-654; BIBL. 31 REF.Article

OBTAINING HIGH RELIABILITY PERFORMANCE FROM COMMERCIAL QUALITY OPTOISOLATORS.DOSHAY I; KALASHIAN M.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 3; PP. 235-247; BIBL. 5 REF.Article

EFFECT OF DISLOCATIONS ON THE DEGRADATION OF SILICON-DOPED GAAS LUMINESCENT DIODESMETTLER K; PAWLIK D.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 274-278; ABS. ALLEM.; BIBL. 17 REF.Serial Issue

RETENTION AND ENDURANCE CHARACTERISTICS OF HCI-ANNEALED AND UNANNEALED MNOS CAPACITORSBROWN WD.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 373-378; BIBL. 8 REF.Article

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