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ESD defect localization and analysis using pulsed OBIC techniquesBEAUCHENE, T; LEWIS, D; TREMOUILLES, D et al.Proceedings - Electrochemical Society. 2003, pp 156-165, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

Effect of physical defect on shmoos in CMOS DSM technologiesMACHOUATA, A; HALLER, G; GOUBIER, V et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1333-1338, issn 0026-2714, 6 p.Conference Paper

Study of the ESD defects impact on ICS reliabilityESSELY, F; BESTORY, C; GUITARD, N et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1811-1815, issn 0026-2714, 5 p.Conference Paper