ACCUMULATION ET TEMPS DE RELAXATION DES ELECTRONS PAR EFFET PHOTOELECTRIQUE DANS PB⁰,78)SN⁰,22)TEVUL BM; VORONOVA ID; GRISHECHKINA SP et al.1981; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1981; VOL. 33; NO 6; PP. 346-350; BIBL. 7 REF.Article

LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB_0-85SN_0-15 TE DIODE LASER WITH CONTROLLED CARRIER CONCENTRATIONORON M; ZUSSMAN A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 7-9; BIBL. 8 REF.Article

THE FREQUENCY DEPENDENT RELAXATION TIME OF FREE CARRIERS IN PBSNTEGOPAL V.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 4; PP. 237-244; BIBL. 10 REF.Article

VARIATIONS DE L'HOMOGENEITE DES SOLUTIONS SOLIDES DE TELLURURE DE PLOMB-TELLURURE D'ETAIN LORS DU RECUIT AVEC GRADIENT DE TEMPERATUREDEDEGKAEV TT; LAGKUEV D KH; MOSHNIKOV VA et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 404-406; BIBL. 4 REF.Article

DOPING AND ELECTRICAL PROPERTIES OF CD-DOPED CRYSTALS AND LPE LAYERS OF PB_1-XSN_XTESILBERG E; ZEMEL A.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 2; PP. 275-288; BIBL. 28 REF.Article

RECOMBINATION OF PHOTOCARRIERS IN LEAD-TIN TELLURIDEWEISER K; RIBAK E; KLEIN A et al.1981; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1981; VOL. 21; NO 3; PP. 149-154; BIBL. 27 REF.Article

PROPRIETES ELECTROPHYSIQUES ET OPTIQUES DES HETEROJONCTIONS PB_1-XSN_XTE(IN)-N-PBTE-PLIDORENKO NS; DASHEVSKIJ ZM; KOTEL'NIKOV VA et al.1981; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1981; VOL. 256; NO 3; PP. 580-582; BIBL. 9 REF.Article

ETUDE DE LA NATURE DE L'ABSORPTION ADDITIONNELLE DE PB_1-XSN_XTE DANS LA REGION SPECTRALE DE GRANDE LONGUEUR D'ONDEGREKOV YU B; PRUDNIKOV VV; SEMIKOLENOVA NA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2057-2060; BIBL. 4 REF.Article

SUSCEPTIBILITE MAGNETIQUE DES SEMICONDUCTEURS A BANDE INTERDITE ETROITEFAL'KOVSKIJ LA; BRODOVOJ AV; LASHKAREV GV et al.1981; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1981; VOL. 80; NO 1; PP. 334-348; ABS. ENG; BIBL. 20 REF.Article

CHARACTERISTIC STEPS IN THE RELAXATION CURVES OF FIELD-QUENCHED PERSISTENT PHOTOCONDUCTIVITY OF PB_0.78SN_0.22TE:INHERRMANN KH; MOELLMANN KP.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. K67-K70; BIBL. 8 REF.Article

SPECTRA OF PHOTO- AND ELECTROLUMINESCENCE OF BISMUTH-DOPED PB_1-XSN_XTEAITIKEEVA TD; LEBEDEV AI; YUNOVICH AE et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 171-175; ABS. GER; BIBL. 16 REF.Article

THE ROLE OF LATTICE MATCHING IN IMPROVING THE PERFORMANCE OF PBSNTE IR PHOTODIODESROTTER S; KASEMSET D; FONSTAD CG et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 66-68; BIBL. 14 REF.Article

DIELECTRIC PROPERTIES OF EPITAXIAL PB_1-XSN_XTE LAYERS AT MICROWAVE FREQUENCIESLEHMANN H; NIMTZ G; HAAS LD et al.1981; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1981; VOL. 25; NO 3; PP. 291-295; BIBL. 28 REF.Article

HIGH RESOLUTION DOPING PROFILES IN PB_1-X SN_X TE THIN FILM STRUCTURESPARTIN DL.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 5; PP. 1074-1076; BIBL. 7 REF.Article

LONGITUDINAL MODE BEHAVIOR OF PBSNTE BURIED HETEROSTRUCTURE LASERSKASEMSET D; FONSTAD CG.1981; APPLIED PHYSICS LETTERS; ISSN 0003-6951; NLD; DA. 1981; VOL. 39; NO 11; PP. 872-874; BIBL. 18 REF.Article

ETUDE DE LA SURFACE DE PB_1-XSN_XTE PAR LA METHODE DE SPECTROSCOPIE DE PHOTOELECTRONS DE RAYONS XZARIDZE D SH; GEJMAN KI; DRABKIN IA et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 11; PP. 2011-2015; BIBL. 11 REF.Article

CONTACT RELIABILITY STUDIES ON LEAD-SALT DIODE LASERSLO W; GIFFORD FE.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 6; PP. 1372-1375; BIBL. 18 REF.Article

DISORDER SCATTERING IN MIXED PB_1-XSN_XTE-TYPE SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K87-K90; BIBL. 9 REF.Article

A NEW METHOD FOR THE GROWTH OF PB_1-XSN_XTE SINGLE CRYSTALS.PANDEY RK.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 3; PP. 449-452; ABS. ALLEM.; BIBL. 5 REF.Article

ELECTRICAL TRANSPORT PROPERTIES OF EPITAXIAL FILMS OF PB_1-XSN_XTEDAWAR AL; KUMAR P; PARADKAR SK et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 503-507; ABS. GER; BIBL. 18 REF.Article

SELF-DIFFUSION OF SN AND TE IN PB_0.8SN_0.2TE AT A TEMPERATURE OF 600^OCTANG HG; LUNN B; SHAW D et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3508-3510; BIBL. 7 REF.Article

THE MN²⁺ ION SPECTRA IN PB_XSN_1-XTE ALLOYSHEJWOWSKI T; SUBOTOWICZ M.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 1; PP. 373-377; BIBL. 20 REF.Article

TUNNELING-DETERMINED THRESHOLD CURRENT IN PB_1-XSN_XTE DIODE LASERSEGER D; ORON M; ZEMEL A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 471-473; BIBL. 24 REF.Article

TUNNELLING CURRENT IN PBTE-PB⁰,8)SN⁰,2) TE HETEROJUNCTIONSZEMEL A; EGER D.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1123-1126; BIBL. 22 REF.Article

THALLIUM AND INDIUM DOPED PB_1-XSN_XTE BY LIQUID PHASE EPITAXY.TOMASETTA LR; FONSTAD CG.1974; MATER. RES. BULL.; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 799-802; BIBL. 4 REF.Article