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PROPRIETES PHOTOELECTRIQUES D'HETEROJONCTIONS NON PARFAITESSHIK A YA; SHMARTSEV YU V.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1385-1393; BIBL. 23 REF.Article

INTERFACIAL ELECTRICAL PROPERTIES OF ION-BEAM SPUTTER DEPOSITED AMORPHOUS CARBON ON SILICONAZIM KHAN; WOOLLAM JA; CHUNG Y et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 146-149; BIBL. 16 REF.Article

INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 723-732; BIBL. 24 REF.Article

ON THE ELECTRICAL PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATESHASEGAWA H; SAWADA T.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 119-140; BIBL. 79 REF.Article

SI-SIO2 INTERFACE STATES BASED ON OPTICALLY ACTIVATED CONDUCTANCE TECHNIQUESINGH RJ; SRIVASTAVA RS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 319-323; BIBL. 17 REF.Article

THEORETICAL STUDY OF METAL OVERLAYER THICKNESS EFFECTS ON THE ELECTRONIC PROPERTIES OF METAL-SEMICONDUCTOR INTERFACESMASRI P; LANGLADE P.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 34; PP. 5379-5389; BIBL. 21 REF.Article

A SIMPLE METHOD FOR MEASURING THE INTERFACE STATE DENSITY.NASHIMATSU S; ASHIKAWA M.1974; REV. SCI. INSTRUM.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 1109-1112; BIBL. 10 REF.Article

STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPYBARRET C; CHEKIR F; VAPAILLE A et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2421-2438; BIBL. 18 REF.Article

USE OF L1L2,3)V AUGER TRANSITIONS FOR AN ELECTRONIC-STRUCTURE STUDY OF THE AL-SI(111)-(2 X 1) INTERFACEKOBAYASHI KLI; SHIRAKI Y; GERKEN F et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3575-3578; BIBL. 12 REF.Article

THE ELECTRONIC STRUCTURE OF SI/GAP (110) INTERFACE AND SUPERLATTICEMADHUKAR A; DELGADO J.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 3; PP. 199-203; BIBL. 11 REF.Article

EFFET D'UN RAYONNEMENT IONISANT SUR LES ETATS RAPIDES DU SYSTEME SI-SIO2)KIBLIK V YA; LISOVSKIJ IP; LITVINOV RO et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 84-91; BIBL. 14 REF.Article

EFFECT OF SURFACE IMPURITIES ON RADIATION-INDUCED CHANGES IN MOS STRUCTURES.LITVINOV RO; LITOVCHENKO VG; RADESKE C et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 22; NO 1; PP. 293-298; ABS. RUSSE; BIBL. 12 REF.Article

FREQUENCY DEPENDENCE OF THE SURFACE STATES AT THE N-TYPE SI-SIO2 INTERFACESINGH RJ; SRIVASTAVA RS.1981; PRAMANA; ISSN 0304-4289; IND; DA. 1981; VOL. 16; NO 6; PP. 511-518; BIBL. 12 REF.Article

DEPENDANCE OF INTERFACE STATE PROPERTIES OF ELECTROLYTE-SIO2-SI STRUCTURES ON PHBARABASH PR; COBBOLD RSC.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 102-108; BIBL. 18 REF.Article

ELECTRONIC STRUCTURE OF ZINC-BLENDE-WURTZITE INTERFACES: ZNS-ZNS (111-0001) AND ZNSE-ZNSE (111-0001)NORTHRUP JE; IHM J; COHEN ML et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 4; PP. 2060-2065; BIBL. 12 REF.Article

MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES.ARNOLD E; SCHAUER H.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 333-335; BIBL. 6 REF.Article

SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC STRUCTURE OF THE (110) INTERFACES OF GE-GAAS AND ALAS-GAAS.PICKETT WE; LOUIE SG; COHEN ML et al.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 2; PP. 815-828; BIBL. 33 REF.Article

THEORY OF GAAS-OXIDE INTERFACE STATESALLEN RE; DOW JD.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 4; PP. 379-381; BIBL. 12 REF.Article

PASSIVATION AND INTERFACE STATE STUDIES ON N-GAASFRESE KW JR; MORRISON SR.1981; APPL. SURF. SCI.; ISSN 0378-5963; NLD; DA. 1981; VOL. 8; NO 3; PP. 266-277; BIBL. 23 REF.Article

COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS.MA TP; SCOGGAN G; LEONE R et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 61-63; BIBL. 11 REF.Article

INFLUENCE OF ILLUMINATION ON OXIDE CHARGES AND INTERFACE STATES OF INSB MOS DEVICES.PAGNIA H.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 7; PP. 389-390; BIBL. 3 REF.Article

STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES.ZIEGLER K; KLAUSMANN E.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 400-402; BIBL. 18 REF.Article

PLASMA ANODISATION OF GA1-XINXAS (X=0.35 AND 0.10) AND STUDY OF MOS INTERFACE PROPERTIESGOURRIER S; CHANE JP.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 156-157; BIBL. 6 REF.Article

THRESHOLD-VOLTAGE INSTABILITY OF N-CHANNEL MOSFET'S UNDER BIAS-TEMPERATURE AGINGSHIONO N; HASHIMOTO C.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 361-368; BIBL. 13 REF.Article

DETERMINATION DES PARAMETRES D'ETATS DE SURFACE PAR LA METHODE DE DECHARGE THERMOSTIMULEE D'UN CONDENSATEUR MDSLUSHNIKOV NA; ZHDAN AG.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 793-797; BIBL. 9 REF.Article

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