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CONTROLE DES PROCESSUS D'ATTAQUE DES MATERIAUX DANS UN PLASMA A DECHARGE GAZEUSE BASSE TEMPERATUREDANILIN BS; KIREEV V YU; KAPLIN VA et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 1; PP. 13-29; BIBL. 61 REF.Article

IMPORTANT CONSIDERATIONS IN SELECTING ANISOTROPIC PLASMA ETCHING EQUIPMENTBROYDO S.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 159-165; BIBL. 7 REF.Article

SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMAMATSUO S.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 768-770; BIBL. 7 REF.Article

EINSATZMOEGLICHKEITEN DER FORMAETZTEILTECHNIK = ETCHING OF SHAPED PARTSLENDLE E.1981; ING. DIG.; DEU; DA. 1981-06; VOL. 20; NO 6; PP. 45-48; BIBL. 3 REF.Article

AN INEXPENSIVE SPRAY-FREEZING UNIT FOR PREPARING SPECIMENS FOR FREEZE-ETCHING.LANG RDA; CROSBY P; ROBARDS AW et al.1976; J. MICR.; G.B.; DA. 1976; VOL. 108; NO 1; PP. 101-104; BIBL. 2 REF.Article

ROLE OF COMPLEXING AGENTS ON THE ETCHING CHARACTERISTICS OF BI-SB ALLOY SINGLE CRYSTALSBHATT VP; VYAS AR; PANDYA GR et al.1980; J. CRYST. GROWTH; NLD; DA. 1980-03; VOL. 48; NO 3; PP. 483-485; BIBL. 5 REF.Article

AN ETCH METHOD OF REVEALING CARBIDES IN W CONTAINING ALLOY CAST IRONJIANG XIAOXIA.1980; CHIN SHU HSUEH PAO; ISSN 0412-1961; CHN; DA. 1980; VOL. 16; NO 3; PP. 336-340; ABS. ENGArticle

1-MU M MOS PROCESS USING ANISOTROPIC DRY ETCHINGENDO N; KUROGI Y.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 411-416; BIBL. 20 REF.Article

DRY ETCH RESISTANCE OF ORGANIC MATERIALSGOKAN H; ESHO S; OHNISHI Y et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 143-146; BIBL. 8 REF.Article

ANISOTROPIC PLASMA ETCHING OF SEMICONDUCTOR MATERIALSPARRY PD; RODDE AF.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 4; PP. 125-132; BIBL. 37 REF.Article

POSITIVE WAFER TEMPERATURE CONTROL TO INCREASE DRY ETCH THROUGHPUT AND YIELDEGERTON EJ; NEF A; MILLIKIN W et al.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 84-87; BIBL. 3 REF.Article

EFFECTS OF ION ETCHING ON THE PROPERTIES OF GAASKAWABE M; KANZAKI N; MASUDA K et al.1978; APPL. OPT.; USA; DA. 1978; VOL. 17; NO 16; PP. 2556-2561; BIBL. 24 REF.Article

SELECTIVE PLASMA ETCHING OF FEP FLUOROCARBON FILMS FOR INTERCONNECTIONS IN HYBRID CIRCUITSLACOMBE DJ.1978; INSULAT. CIRCUITS; USA; DA. 1978; VOL. 24; NO 13; PP. 86-88Article

SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2EPHRATH LM.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1419-1421; BIBL. 5 REF.Article

REACTIVE ION ETCHING OF SILICON DIOXIDELIGHT RW; SEE FC.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1152-1154; BIBL. 3 REF.Article

DIRECTIONAL REACTIVE ION ETCHING AT OBLIQUE ANGLESBOYD GD; COLDREN LA; STORZ FG et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 583-585; BIBL. 7 REF.Article

REACTIF OXYDANT POUR AMELIORER LES CONTRASTES EN MICROGRAPHIE DES FONTES = OXYDIZING ETCHING REAGENT FOR CONTRAST IMPROVING IN CAST IRON METALLOGRAPHYCLOAREC P.1980; FONDERIE; FRA; DA. 1980; VOL. 35; NO 397; PP. 115-116Article

TAPERING OF POLYSILICON STRUCTURES BY COMBINATION OF ION MILLING PRETREATMENT AND PLASMA ETCHINGBELL G.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-77 7 1946; PP. 339-343; ABS. FRE; BIBL. 9 REF.Conference Paper

POLYVINYL ALCOHOL COATING: AN IMPROVEMENT OF THE FREEZE-FRACTURE TECHNIQUEBROWN D.1981; J. MICROSC. (OXF.); ISSN 0022-2720; GBR; DA. 1981; VOL. 121; NO 3; PP. 283-287; BIBL. 11 REF.Article

SUBMICRON GAAS MICROWAVE RET'S WITH LOW PARASITIC GATE AND SOURCE RESISTANCESBANDY SG; CHAI YG; CHOW R et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 2; PP. 42-44; BIBL. 10 REF.Article

DRY PROCESSING OF HIGH RESOLUTION AND HIGH ASPECT RATIO STRUCTURES IN GAAS-ALXGA1-XAS FOR INTEGRATED OPTICS.SOMEKH S; CASEY HC JR.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 1; PP. 126-136; BIBL. 51 REF.Article

UNIFIED ANALYSIS OF THE BULK UNIPOLAR DIODEHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 86-89; BIBL. 9 REF.Article

FREEZE-ETCHING OF UNGLYCERINATED TISSUE DISPERSIONS BY APPLICATION OF THE OIL EMULSION TECHNIQUE.BUCHHEIM W; WELSCH U.1977; J. MICR.; G.B.; DA. 1977; VOL. 111; NO 3; PP. 339-349; BIBL. 1 P.Article

NACHWEIS VON SIGMA-PHASE UND DELTA-FERRIT IM FERRITISCH-AUSTENITISCHEN STAHL X5CRNITI26.6 MIT HILFE VON METALLOGRAPHISCHEN UND MAGNETISCHEN VERFAHREN = DETECTION OF THE SIGMA -PHASE AND OF THE DELTA -FERRITE IN THE FERRITIC-AUSTENITIC STEEL X5CRNITI26.6 WITH THE AID OF METALLOGRAPHIC AND MAGNETIC METHODSECKSTEIN HJ; OELSCHLEGEL G; DRABER G et al.1982; NEUE HUETTE; ISSN 0028-3207; DDR; DA. 1982-11; VOL. 27; NO 11; PP. 426-427; BIBL. 8 REF.Article

PROCEDIMENTI ELETTROCHIMICI DI SBAVATURA = ELECTROCHEMICAL TRIMMING PROCESSES = PROCEDES D'EBAVURAGE ELECTROCHIMIQUES1982; TRATTAMENTI E FINITURA; ISSN 0041-1833; ITA; DA. 1982; VOL. 22; NO 6-7; PP. 45-46Article

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