au.\*:("ETTENBERG M")
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VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALXGA1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article
A NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR LASERS.ETTENBERG M.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 724-725; BIBL. 9 REF.Article
ON THE SPATIAL MODE STABILITY OF OXIDE STRIPE CW LASERS DURING ACCELERATED AGING AT 70OCETTENBERG M.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3845-3848; BIBL. 27 REF.Article
A STATISTICAL STUDY OF THE RELIABILITY OF OXIDE-DEFINED STRIPE CW LASERS OF (AIGA)ASETTENBERG M.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1195-1202; BIBL. 17 REF.Article
THE EFFECT OF REABSORBED RADIATION ON THE MINORITY-CARRIER DIFFUSION LENGTH IN GAAS.ETTENBERG M.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 4; PP. 207-210; BIBL. 10 REF.Article
HIGH-POWER DIODE LASERS FOR OPTICAL RECORDING WITH OPERATING LIFETIMES IN EXCESS OF 10000 HETTENBERG M; BOTEZ D.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 153-154; BIBL. 10 REF.Article
VERY LOW THRESHOLD DOUBLE HETEROJUNCTION LASER DIODES OF (ALGA)AS.ETTENBERG M; KRESSEL H.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 487-489; BIBL. 2 REF.Conference Paper
Applications spur diode-laser developmentsETTENBERG, M.Laser focus world. 1991, Vol 27, Num 5, pp 137-150, issn 1043-8092, 8 p.Article
Developments to watch in diode lasersETTENBERG, M.Laser focus (1983). 1985, Vol 21, Num 5, pp 86-98, issn 0740-2511Article
BEAMWIDTH APPROXIMATIONS FOR THE FUNDAMENTAL MODE IN SYMMETRIC DOUBLE-HETEROJUNCTION LASERSBOTEZ D; ETTENBERG M.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 827-830; BIBL. 19 REF.Article
THE RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED INXGA1-XP/GAAS HETEROJONCTIONS.ETTENBERG M; OLSEN GH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4275-4280; BIBL. 25 REF.Article
CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES.OLSEN GH; ETTENBERG M.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2543-2547; BIBL. 25 REF.Article
COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE.ETTENBERG M; NUESE CJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3500-3508; BIBL. 45 REF.Article
INTERFACIAL RECOMBINATION AT (ALGA)AS/GAAS HETEROJUNCTION STRUCTURES.ETTENBERG M; KRESSEL H.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1538-1544; BIBL. 15 REF.Article
LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS/GAAS LASER DIODES: THEORY AND EXPERIMENT.KRESSEL H; ETTENBERG M.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3533-3537; BIBL. 15 REF.Article
HETEROJUNCTION DIODES OF (ALGA) AS-GAAS WITH IMPROVED DEGRADATION RESISTANCE.ETTENBERG M; KRESSEL H.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 478-480; BIBL. 11 REF.Article
ELECTRON TRANSPORT AND EMISSION CHARACTERISTICS OF NEGATIVE ELECTRON AFFINITY ALXGA1-XAS ALLOYS (0 <OU= X <OU= 0.3).MARTINELLI RU; ETTENBERG M.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3896-3898; BIBL. 24 REF.Article
THE RELIABILITY OF (ALGA)AS CW LASER DIODESETTENBERG M; KRESSEL H.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 186-196; BIBL. 66 REF.Article
COMPARISON OF SURFACE- AND EDGE-EMITTING LED'S FOR USE IN FIBER-OPTICAL COMMUNICATIONSBOTEZ D; ETTENBERG M.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 8; PP. 1230-1238; BIBL. 37 REF.Article
REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES.ETTENBERG M; NUESE CJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2137-2142; BIBL. 19 REF.Article
EFFECT OF SUBSTRATE PREPARATION ON THE SMOOTHNESS OF LIQUID PHASE EPITAXIAL (ALGA)AS ON GAP.ETTENBERG M; MCFARLANE SH III.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 3; PP. 233-236; BIBL. 11 REF.Article
SELF-OSCILLATIONS AND DYNAMIC BEHAVIOR OF AGED INGAASP LASER DIODESCHANNIN DJ; OLSEN GH; ETTENBERG M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 207-210; BIBL. 13 REF.Article
HIGH-POWER CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE LASERS FOR OPTICAL RECORDINGBOTEZ D; SPONG FW; ETTENBERG M et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 4-6; BIBL. 18 REF.Article
THE TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERSETTENBERG M; NUESE CJ; KRESSEL H et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2949-2950; BIBL. 7 REF.Article
RADIATION TRAPPING IN LASER DIODESETTENBERG M; LOCKWOOD HF; SOMMERS HS JR et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5047-5051; BIBL. 9 REF.Serial Issue