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au.\*:("EVANS AGR")

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SATURATION VELOCITY OF ELECTRONS IN GA AS. = VITESSE DE SATURATION DES ELECTRONS DANS LE GAASHOUSTON PA; EVANS AGR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 6; PP. 584-586; BIBL. 9 REF.Article

DRIFT MOBILITY MEASUREMENTS IN THIN EPITAXIAL SEMICONDUCTOR LAYERS USING TIME-OF-FLIGHT TECHNIQUES.EVANS AGR; ROBSON PN.1974; SOLID. STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 805-812; BIBL. 9 REF.Article

TEMPERATURE DEPENDENCE OF THE HIGH FIELD VELOCITY OF ELECTRONS IN N GAAS.HOUSTON PA; EVANS AGR.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 210-211; BIBL. 2 REF.Article

ELECTRON DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC FIELDS.HOUSTON PA; EVANS AGR.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 197-204; BIBL. 16 REF.Article

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