A COMPARISON OF THE TECHNIQUES FOR SILICON SURFACE ANALYSIS. = UNE COMPARAISON DES TECHNIQUES POUR L'ANALYSE DE SURFACES DE SILICIUMEVANS CA JR.1976; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1976; NO 400-23; PP. 219-232; BIBL. 7 REF.Article

ELECTROHYDRODYNAMIC IONIZATION MASS SPECTROMETRY: PYRIMIDINES, PURINES, NUCLEOSIDES AND NUCLEOTIDESLAI STF; EVANS CA JR.1979; BIOMED. MASS SPECTROM.; GBR; DA. 1979; VOL. 6; NO 1; PP. 10-14; BIBL. 13 REF.Article

MODERN EXPERIMENTAL METHODS FOR SURFACE AND THIN-FILM CHEMICAL ANALYSIS.EVANS CA JR; BLATTNER RJ.1978; ANNU. REV. MATER. SCI.; USA; DA. 1978; VOL. 8; PP. 181-214; BIBL. 52 REF.Article

A SIMPLE ELECTRONIC APERTURE FOR RASTERED-BEAM DEPTH PROFILES.WILLIAMS P; EVANS CA JR.1976; INTERNATION. J. MASS SPECTROM. ION PHYS.; NETHERL.; DA. 1976; VOL. 22; NO 3-4; PP. 327-331; BIBL. 3 REF.Article

REDUCTION OF A MATRIX EFFECT IN SPARK SOURCE MASS SPECTROMETRY USING A SOLUTION DOPING TECHNIQUEGUIDOBONI RJ; EVANS CA JR.1972; ANAL. CHEM.; U.S.A.; DA. 1972; VOL. 44; NO 12; PP. 2027-2030; BIBL. 7 REF.Serial Issue

SI INCORPORATION IN AL_XGA_1-XAS GROWN BY MOLECULAR BEAM EPITAXYHOPKINS CG; EVANS CA JR.1982; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 4; PP. 957-960; BIBL. 12 REF.Article

DEPTH PROFILE DETECTION LIMIT OF 3 X 10¹⁵ ATOM CM^-3 FOR AS IN SI USING CS⁺ BOMBARDMENT NEGATIVE SECONDARY ION MASS SPECTROMETRY.WILLIAMS P; EVANS CA JR.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 11; PP. 559-561; BIBL. 7 REF.Article

AN ELECTROHYDRODYNAMIC ION SOURCE FOR THE MASS SPECTROMETRY OF LIQUIDSEVANS CA JR; HENDRICKS CD.1972; REV. SCI. INSTRUM.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 1527-1530; BIBL. 27 REF.Serial Issue

SPECTRAL INTERFERENCES IN SECONDARY ION MASS SPECTROMETRY.COLBY BN; EVANS CA JR.1973; APPL. SPECTROSC.; U.S.A.; DA. 1973; VOL. 27; NO 4; PP. 274-279; BIBL. 17 REF.Article

HIGH MASS RESOLUTION ION MICROPROBE MASS SPECTROMETRY OF COMPLEX MATRICESBAKALE DK; COLBY BN; EVANS CA JR et al.1975; ANAL. CHEM.; U.S.A.; DA. 1975; VOL. 47; NO 9; PP. 1532-1537; BIBL. 21 REF.Article

DAMAGE GETTERING OF CR DURING THE ANNEALING OF CR AND S IMPLANTS IN SEMI-INSULATING GAASVASUDEV PK; WILSON RG; EVANS CA JR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 308-310; BIBL. 10 REF.Article

MASS SPECTROMETRY OF SOLVATED IONS GENERATED DIRECTLY FROM THE LIQUID PHASE BY ELECTROHYDRODYNAMIC IONIZATION.STIMPSON BP; SIMONS DS; EVANS CA JR et al.1978; J. PHYS. CHEM.; U.S.A.; DA. 1978; VOL. 82; NO 6; PP. 660-670; BIBL. 74 REF.Article

SIMPLE ION PROBE ATTACHMENT FOR EXISTING MASS SPECTROMETERSBLATTNER RJ; BAKER JE; EVANS CA JR et al.1974; ANAL. CHEM.; U.S.A.; DA. 1974; VOL. 46; NO 14; PP. 2171-2176; BIBL. 23 REF.Article

ROUTINE ANALYSIS OF METALS USING A SPARK SOURCE MASS SPECTROGRAPH WITH ELECTRICAL DETECTION.EVANS CA JR; GUIDOBONI RJ; LEIPZIGER FD et al.1970; APPL. SPECTROSC.; USA; 1970(2), VOL. 24, NUM. 0001, P. 85 A 91Miscellaneous

A UNIFIED EXPLANATION FOR SECONDARY ION YIELDSDELINE VR; EVANS CA JR; WILLIAMS P et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 578-580; BIBL. 12 REF.Article

EVALUATION OF THE LOCAL THERMAL EQUILIBRIUM MODEL FOR QUANTITATIVE SECONDARY ION MASS SPECTROMETRIC ANALYSIS.SIMONS DS; BAKER JE; EVANS CA JR et al.1976; ANAL. CHEM.; U.S.A.; DA. 1976; VOL. 48; NO 9; PP. 1341-1348; BIBL. 21 REF.Article

HIGH-TEMPERATURE SCANNING CW LASER-INDUCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN SILICONMATSUMOTO S; GIBBONS JF; DELINE V et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 9; PP. 821-824; BIBL. 20 REF.Article

MECHANISM OF THE SIMS MATRIX EFFECTDELINE VR; KATZ W; EVANS CA JR et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 9; PP. 832-835; BIBL. 13 REF.Article

ION MICROPROBE ANALYSIS FOR NIOBIUM HYDRIDE IN HYDROGENEMBRITTLED NIOBIUMWILLIAMS P; EVANS CA JR; GROSSBECK ML et al.1976; ANAL. CHEM.; U.S.A.; DA. 1976; VOL. 48; NO 7; PP. 964-968; BIBL. 12 REF.Article

A CORRELATION OF ATOMIC AND ELECTRICAL MEASUREMENTS OF CR AND RESIDUAL DONORS IN THERMALLY PROCESSED SEMI-INSULATING GAASVASUDEU PK; WILSON RG; EVANS CA JR et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 565-567; BIBL. 9 REF.Article

ANOMALOUS BORON PROFILES PRODUCED BY BF₂ IMPLANTATION INTO SILICONSIGMON TW; DELINE VR; EVANS CA JR et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 4; PP. 981-982; BIBL. 2 REF.Article

CHARACTERIZING THE SURFACES OF ENVIRONMENTAL PARTICLES.KEYSER TR; NATUSCH DFS; EVANS CA JR et al.1978; ENVIRONMENT. SCI. TECHNOL.; USA; DA. 1978; VOL. 12; NO 7; PP. 768-773; BIBL. 5 REF.Article

SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS SPECTROMETRY.LIDOW A; GIBBONS JF; DELINE VR et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 9; PP. 572-573; BIBL. 7 REF.Article

MECHANISM OF HIGH-TEMPERATURE INSTABILITY OF CUO-AG THIN-FILM SOLAR ABSORBERS.BLATTNER RJ; EVANS CA JR; BRAUNDMEIER AJ JR et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 5; PP. 1132-1138; BIBL. 10 REF.Article

APPLICATION OF ION PROBE ANALYSIS TO STUDIES OF HYDROGEN BEHAVIOR IN SOLIDS.GROSSBECK ML; WILLIAMS P; EVANS CA JR et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. K97-K99; BIBL. 4 REF.Article