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REVETEMENTS ACHROMATIQUES ANTIREFLECHISSANTS POUR DES MATERIAUX AVEC DES INDICES DE REFRACTION 1,46-1,8VVEDENSKIJ VD; METEL'NIKOV AA; FURMAN SH A et al.1980; OPT.-MEKH. PROMYSHL.; SUN; DA. 1980; NO 3; PP. 32-34; BIBL. 6 REF.Article

RECRYSTALLIZATION OF SIC THIN FILMS.DUBEY M; SINGH G.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 11; PP. 1482-1484; H.T. 2; BIBL. 6 REF.Article

STUDY OF RECRYSTALLIZATION OF SIC THIN FILMS.DUBEY M.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 197-202; BIBL. 11 REF.Article

GROWTH OF POLYCRYSTALLINE SILICON FILMS ON TITANIUM AND ALUMINUM LAYERS.EPHRATH LM.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 6; PP. 1207-1227; BIBL. 14 REF.Article

TECHNOLOGICAL ADVANCES IN PHYSICAL VAPOR DEPOSITIONHERKLOTZ G; ELIGEHAUSEN H.1983; IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOLGY; ISSN 0148-6411; USA; DA. 1983; VOL. 6; NO 2; PP. 173-180; BIBL. 7 REF.Article

OBTENTION DE COUCHES DIELECTRIQUES PAR UNE METHODE D'EVAPORATION PAR FAISCEAU ELECTRONIQUEPANKOV YU D; KAMIN VA; ANDREEV SS et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 5; PP. 228-229; BIBL. 3 REF.Article

Control of ionization in e-beam evaporators via optimum choice of focus-coil currentBHATIA, M. S; PATEL, K; JOSHI, A et al.Review of scientific instruments. 1989, Vol 60, Num 8, pp 2794-2796, issn 0034-6748Article

ELECTRON-BEAM EVAPORATED SILICON FILMS FOR MIS SOLAR CELLSDEY SK.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1181-1185; BIBL. 10 REF.Conference Paper

FONCTION DE DISTRIBUTION DE LA DENSITE DU FLUX GAZEUX D'UN EVAPORATEUR A FAISCEAU ELECTRONIQUEPANTELEEV GV; YAMPOL'SKIJ VI; EGOROV VN et al.1982; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1982; NO 5; PP. 42-44; BIBL. 6 REF.Article

ION-BEAM-ASSISTED DEPOSITION OF THIN FILMSMARTIN PJ; MACLEOD HA; NETTERFIELD RP et al.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 1; PP. 178-184; BIBL. 26 REF.Article

A LOW-TEMPERATURE FABRICATION PROCESS OF POLYCRYSTALLINE SILICON-SILICON P+-N JUNCTION DIODEWU CMM; YANG ES.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 813-814; BIBL. 10 REF.Article

MODEL FOR DESCRIBING EMISSION CHARACTERISTICS OF ELECTRON-BEAM EVAPORATION SOURCESSZILAGYI M.1979; ELECTROCOMPON. SCI. TECHNOL.; GBR; DA. 1979; VOL. 6; NO 1; PP. 9-12; BIBL. 10 REF.Article

EVAPORATEUR UNIVERSEL A FAISCEAU ELECTRONIQUE UEHLI-1MVOL'FSON L YU; KABANOV AN; VASICHEV BN et al.1982; OPTIKO-MEHANICESKAJA PROMYSLENNOST; ISSN 0030-4042; SUN; DA. 1982; NO 7; PP. 36-37; BIBL. 1 REF.Article

METAL-OXIDE-SEMICONDUCTOR INSTABILITY PRODUCED BY ELECTRON-BEAM EVAPORATION OF ALUMINUM GATESHAN SHENG LEE.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 795-799; BIBL. 16 REF.Article

Kogesputterte Silicide für hochintegrierte festkörperschaltkreise = Couches minces de siliciures copulvérisées pour circuits hautement intégrés à l'état solide = Cosputtered silicides for VLSI-circuitsTEMMLER, D; RASCHKE, T; ROCKOFF, A et al.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 5, pp 708-712, issn 0372-7610Article

Herstellung und Eigenschaften von dünnen Molybdänsilicidschichten, die durch Elektronenstrahlverdampfung abgeschieden wurden = Préparation et qualité des couches minces de siliciure de molybdène préparées par évaporation à l'aide d'un faisceau électronique = Preparation and properties of molybdenum silicide thin films made by electron beam evaporationKAUFMANN, C.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 4, pp 513-518, issn 0372-7610Article

High rate electron beam evaporationSCHILLER, S; JAESCH, G; NEUMANN, M et al.Thin solid films. 1983, Vol 110, Num 2, pp 149-164, issn 0040-6090Article

INTERFACIAL ORDER IN EPITAXIAL NISI2CHIU KCR; POATE JM; FELDMAN LC et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 544-547; BIBL. 7 REF.Article

ETUDE DE L'INFLUENCE DU RECUIT SUR LES PROPRIETES STRUCTURALES ET OPTIQUES DES COUCHES DE DIOXYDE DE ZIRCONIUMKLECHKOVSKAYA VV; KHITROVA VI; SAGITOV SI et al.1980; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1980; VOL. 25; NO 5; PP. 1107-1109; BIBL. 5 REF.Article

EPITAXIAL REGROWTH OF EVAPORATED AMORPHOUS SILICON BY A PULSED LASER BEAMREVESZ P; FARKAS G; MEZEY G et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 431-433; BIBL. 9 REF.Article

SOME PROPERTIES OF EVAPORATED AMORPHOUS SILICON MADE WITH ATOMIC HYDROGENMILLER DL; LUTZ H; WIESMANN H et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6192-6193; BIBL. 8 REF.Article

ETUDE DE LA STRUCTURE DE CONDENSES, EPAIS SOUS VIDE, D'OXYDE D'ALUMINIUMMOVCHAN BA; MOLODKINA TA.1978; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1978; NO 3; PP. 107-109; H.T. 1; BIBL. 5 REF.Article

THIN CD1-XZNXS FILMS EVAPORATED BY ELECTRON BOMBARDMENT. I: STRUCTURE OF THE FILMSMBOW CM; LAPLAZE D; CACHARD A et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 3; PP. 203-209; BIBL. 14 REF.Article

DIFFUSION MARKER EXPERIMENTS WITH RARE-EARTH SILICIDES AND GERMANIDES: RELATIVE MOBILITIES OF THE TWO ATOM SPECIESBAGLIN JEE; D'HEURLE FM; PETERSSON CS et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2841-2846; BIBL. 31 REF.Article

PRACTICAL TROUBLESHOOTING OF VACUUM DEPOSITION PROCESSES AND EQUIPMENT FOR ALUMINIUM METALIZATIONHOFFMAN V.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 12; PP. 47-56; BIBL. 11 REF.Article

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