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Results 1 to 25 of 138

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Edge-emitting III-V LEDs illuminate wearable color microdisplaysALTENDORF, Eric.Laser focus world. 2002, Vol 38, Num 4, pp 53-59, issn 1043-8092, 5 p.Article

Hillocks and hexagonal pits in a thick film grown by HVPEWEI, T. B; DUAN, R. F; WANG, J. X et al.Microelectronics journal. 2008, Vol 39, Num 12, pp 1556-1559, issn 0959-8324, 4 p.Article

Transfer from trap emission to band-edge one in water-soluble CdS nanocrystalsJING YANG; DENG, Da-Wei; YU, Jun-Sheng et al.Journal of colloid and interface science. 2013, Vol 394, pp 55-62, issn 0021-9797, 8 p.Article

Solution-processed annealing-free ZnO nanoparticles for stable inverted organic solar cellsALEM, Salima; JIANPING LU; MOVILEANU, Raluca et al.Organic electronics (Print). 2014, Vol 15, Num 5, pp 1035-1042, issn 1566-1199, 8 p.Article

Microscopy study of the conductive filament in HfO2 resistive switching memory devicesPRIVITERA, S; BERSUKER, G; BUTCHER, B et al.Microelectronic engineering. 2013, Vol 109, pp 75-78, issn 0167-9317, 4 p.Article

Solid-Duty-Control Technique for Alleviating the Right-Half-Plane Zero Effect in Continuous Conduction Mode Boost ConvertersHUANG, Han-Hsiang; CHEN, Chi-Lin; WU, Dian-Rung et al.IEEE transactions on power electronics. 2012, Vol 27, Num 1-2, pp 354-361, issn 0885-8993, 8 p.Article

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE : Novel Gain Materials Based on III-V-N CompoundsWANG, S. M; ADOLFSSON, G; ZHAO, H et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 5, pp 1207-1211, issn 0370-1972, 5 p.Article

The improvement of near-ultraviolet electroluminescence of ZnO nanorods/MEH-PPV heterostructure by using a ZnS buffer layerWANG, Da-Wei; ZHAO, Su-Ling; ZHENG XU et al.Organic electronics (Print). 2011, Vol 12, Num 1, pp 92-97, issn 1566-1199, 6 p.Article

Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesaMAHBUB SALTER, Md; DOUGLAS YODER, Paul.Optical and quantum electronics. 2011, Vol 42, Num 11-13, pp 747-754, issn 0306-8919, 8 p.Conference Paper

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm rangeYANG, Hung-Pin D; SHIH, Chih-Tsung; YANG, Su-Mei et al.Microelectronics and reliability. 2010, Vol 50, Num 5, pp 722-725, issn 0026-2714, 4 p.Article

Effect of Surface Modification on the Optical Properties of Nanocrystalline Zinc Oxide MaterialsSOARES, Jason W; STEEVES, Diane M; SINGH, Jagdeep et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 76031L.1-76031L.9Conference Paper

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devicesLONGO, P; PATERSON, G. W; HOLLAND, M. C et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1568-1570, issn 0167-9317, 3 p.Conference Paper

A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon : Advanced gate stack technology (ISAGST)DOCHERTY, F. T; MACKENZIE, M; CRAVEN, A. J et al.Microelectronic engineering. 2008, Vol 85, Num 1, pp 61-64, issn 0167-9317, 4 p.Article

Chemical bonds in damaged and pristine low-k materials : A comparative EELS studySTEGMANN, Heiko; OZDÖL, V. Burak; KOCH, Christoph et al.Microelectronic engineering. 2008, Vol 85, Num 10, pp 2169-2171, issn 0167-9317, 3 p.Conference Paper

Hybrid colloidal nanocrystal-organics based LEDsRIZZO, Aurora; YANQIN LI; MAZZEO, Marco et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100O.1-69100O.8, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper

Temperature dependence of ZnO thin films grown on Si substrateKIM, Y. Y; AHN, C. H; KANG, S. W et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 749-754, issn 0957-4522, 6 p.Conference Paper

A novel bonding method for ionic wafersHOWLADER, M. M. R; SUGA, Tadatomo; KIM, Moon J et al.IEEE transactions on advanced packaging. 2007, Vol 30, Num 4, pp 598-604, issn 1521-3323, 7 p.Article

MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)BMIGUEL-SANCHEZ, J; GUZMAN, A; ULLOA, J. M et al.Microelectronics journal. 2006, Vol 37, Num 12, pp 1442-1445, issn 0959-8324, 4 p.Conference Paper

Activation process and bonding mechanism of Si/ LiNbO3 and LiNbO3/LiNbO3 at room temperatureHOWLADER, Matiar R; SUGA, Tadatomo; KIM, Moon J et al.Proceedings - Electrochemical Society. 2005, pp 319-325, issn 0161-6374, isbn 1-56677-460-8, 7 p.Conference Paper

Heterogeneous integration of InP/InGaAsP MQW thin film edge emitting lasers and polymer waveguidesKUO, Hung-Fei; CHO, Sang-Yeon; JOKERST, Nan Marie et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 2, 1537-1541Conference Paper

ZnSe nanoparticles of different sizes: Optical and photocatalytic propertiesBO FENG; JIAN CAO; DONGLAI HAN et al.Materials science in semiconductor processing. 2014, Vol 27, pp 865-872, issn 1369-8001, 8 p.Article

Electron energy loss near edge structure of InxAl1-xN alloys : Emerging materials and processes for nanoelectronics and sensorsSOUMELIDOU, M. M; KIOSEOGLOU, J; KIRMSE, H et al.Microelectronic engineering. 2013, Vol 112, pp 198-203, issn 0167-9317, 6 p.Article

Physical properties of nanocrystalline CuO thin films prepared by the SILAR methodMAGESHWARI, K; SATHYAMOORTHY, R.Materials science in semiconductor processing. 2013, Vol 16, Num 2, pp 337-343, issn 1369-8001, 7 p.Article

Thermal annealing induced structural and optical properties of Ca doped ZnO nanoparticlesUDAYABHASKAR, R; MANGALARAJA, R. V; KARTHIKEYAN, B et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 9, pp 3183-3188, issn 0957-4522, 6 p.Article

Controlled Luminescence Property of AIN NanowiresWU, Hue-Min; LIANG, Jaw-Yeu; WANG, Yi-Kai et al.Journal of nanoelectronics and optoelectronics. 2012, Vol 7, Num 3, pp 255-259, issn 1555-130X, 5 p.Article

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