New proximity effect correction for under 100nm patternsSHOJI, Masahiro; HORIUCHI, Nobuyasu; CHIKANAGA, Tomoyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6194-6, 2Vol, VOL 2,615128.1-615128.10Conference Paper

Enhancing the rules for optical proximity correction to improve process latitudeMARTIN, Brian; ARTHUR, Graham.SPIE proceedings series. 2001, pp 631-636, isbn 0-8194-4030-2Conference Paper

Les effets de proximité en microlithographie : caractérisation et étude des méthodes de correction = Proximity effects in microlithography : characterization and evaluation of the correction strategiesToublan, Olivier; Guillemot, Nadine.1999, 190 p.Thesis

Strategy to manipulate the optical proximity effect by post-exposure bake processingGAU, T.-S; WANG, C.-M; DAI, C.-M et al.SPIE proceedings series. 1998, pp 885-891, isbn 0-8194-2779-9Conference Paper

Proximity effect reduction in x-ray mask making using thin silicon dioxide layersRHEE, K. W; MA, D. I; PECKERAR, M. C et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3062-3066, issn 1071-1023Conference Paper

Expanding the process window and reducing the optical proximity effect by post-exposure delayKU, Chin-Yu; SHIEH, Jia-Min; CHIOU, Tsann-Bim et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 8, pp G434-G438, issn 0013-4651Article

Proximity effects on the ground fault current distribution within the earthing system formed by a substation and the associated transmission linesNAHMAN, J. M.IEE proceedings. Part C. Generation, transmission and distribution. 1988, Vol 135, Num 6, pp 497-502, issn 0143-7046Article

A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65- nm nodePARK, Eui-Sang; CHO, Hyun-Joon; KIM, Jin-Min et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-5853-8, 2Vol, Part 1, 58-65Conference Paper

Flexible sparse and dense OPC algorithmsCOBB, Nick.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-5853-8, 2Vol, Part 2, 693-702Conference Paper

Influence of underlayer reflection on optical proximity effects in sub-quarter micron lithographySEKIGUCHI, A; UESAWA, F; TAKEUCHI, K et al.SPIE proceedings series. 1998, pp 347-355, isbn 0-8194-2779-9Conference Paper

Optical proximity correction : A detail comparison of techniques and their effectivenessZHANG, H; MORROW, J; SCHELLENBERG, F. M et al.Microelectronic engineering. 1998, Vol 41-42, pp 79-82, issn 0167-9317Conference Paper

Use of ab initio quantum mechanics calculations in group contribution methods. I, Theory and the basis for group identificationsWU, H. S; SANDLER, S. I.Industrial & engineering chemistry research. 1991, Vol 30, Num 5, pp 881-889, issn 0888-5885, 9 p.Article

Distributed hierarchical processingDEPESA, Paul; KEOGAN, Danny.SPIE proceedings series. 2002, pp 85-90, isbn 0-8194-4517-7, 6 p.Conference Paper

A simple method for computing pyramidal horn gain proximity correctionsSELVAN, Krishnasamy T.International journal of electronics. 2001, Vol 88, Num 5, pp 543-547, issn 0020-7217Article

PYRAMID : A hierarchical, rule-based approach toward proximity effect correction-part I : Exposure estimationLEE, S.-Y. SR; COOK, B. D.IEEE transactions on semiconductor manufacturing. 1998, Vol 11, Num 1, pp 108-116, issn 0894-6507Article

PYRAMID : A hierarchical, rule-based approach toward proximity effect correction-part II : CorrectionCOOK, B. D; LEE, S.-Y.IEEE transactions on semiconductor manufacturing. 1998, Vol 11, Num 1, pp 117-128, issn 0894-6507Article

An automatic gate CD control for a full chip scale SRAM devicePARK, C.-H; KIM, T.-K; LEE, H.-J et al.SPIE proceedings series. 1998, pp 350-357, isbn 0-8194-2669-5Conference Paper

Variable numerical aperture and partial coherence studies : Process window and proximity effectsANDRE, S; WEILL, A.Microelectronic engineering. 1996, Vol 30, Num 1-4, pp 99-102, issn 0167-9317Conference Paper

Fast proximity effect correction method using a pattern area density mapMURAI, F; YODA, H; OKAZAKI, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3072-3076, issn 1071-1023Conference Paper

Low voltage, high resolution studies of electron beam resist exposure and proximity effectMCCORD, M. A; NEWMAN, T. H.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3083-3087, issn 1071-1023Conference Paper

Proximity exposure compensation and resit debris formation in electron beam lithographyDESHMUKH, P. R; SINGH, M; RANGRA, K. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 179-182, issn 0734-211XConference Paper

Thin silicon nitride films for reduction of linewidth and proximity effects in electron-beam lithographyDOBISZ, E. A; MARRIAN, C. R. K; SHIREY, L. M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3067-3071, issn 1071-1023Conference Paper

Determination of proximity effect parameters in electron-beam lithographyMISAKA, A; HARAFUJI, K; NOMURA, N et al.Journal of applied physics. 1990, Vol 68, Num 12, pp 6472-6479, issn 0021-8979, 8 p.Article

Green's-function theory of the superconducting proximity effect = Théorie de la fonction de Green de l'effet de proximité supraconducteurTANAKA, Y; TSUKADA, M.Physical review. B, Condensed matter. 1988, Vol 37, Num 10, pp 5095-5106, issn 0163-1829, part AArticle

Size and proximity effects in multifilamentary superconducting wiresLAZAR, D. P; VLADIMIROVA, N. M; DROBIN, V. M et al.Cryogenics (Guildford). 1986, Vol 26, Num 3, pp 152-156, issn 0011-2275Article