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A general study of tunnelling through multibarrier systemsROY, C. L; ARIF KHAN.Physica status solidi. B. Basic research. 1993, Vol 176, Num 1, pp 101-108, issn 0370-1972Article

Effet tunnel résonnant en spectroscopie des métauxSVISTUNOV, V. M; BELOGOLOVSKIJ, M. A.Fizika tverdogo tela. 1986, Vol 28, Num 1, pp 284-285, issn 0367-3294Article

Lifetime of resonant state in a resonant tunneling systemHARADA, N; KURODA, S.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp L871-L873, issn 0021-4922Article

Self-consistent analysis of resonant tunneling currentOHNISHI, H; INATA, T; MUTO, S et al.Applied physics letters. 1986, Vol 49, Num 19, pp 1248-1250, issn 0003-6951Article

Extended-range tight-binding method for tunnelingSCHULMAN, J. N; TING, D. Z.-Y.Physical review. B, Condensed matter. 1992, Vol 45, Num 11, pp 6282-6285, issn 0163-1829Article

Barrier structure for near unity transmission in double-barrier resonance tunnelingLEE, H. H.Journal of applied physics. 1991, Vol 69, Num 9, pp 6725-6727, issn 0021-8979, 3 p.Article

New degreess of freedom in resonant tunneling heterostructure devicesCOON, D. D; SORAR, E; BANDARA, K. M. S. V et al.Journal of applied physics. 1991, Vol 69, Num 8, pp 4344-4348, issn 0021-8979, 5 p., 1Article

Method for extracting series resistance in MOS devices using Fowler-Nordheim plotMIRANDA, E.Electronics Letters. 2004, Vol 40, Num 18, pp 1153-1154, issn 0013-5194, 2 p.Article

Some typical features of relativistic tunnelling through a double barrier system with δ-function potentialsROY, C. L.Physica status solidi. B. Basic research. 1993, Vol 176, Num 1, pp 109-115, issn 0370-1972Article

Resonant tunneling through a symmetric triple-barrier structureLEO, J; TOOMBS, G. A.Physical review. B, Condensed matter. 1991, Vol 43, Num 12, pp 9944-9946, issn 0163-1829, 3 p.Article

Path-integral approach to transient transport of a double-barrier resonant-tunneling systemCHEN, L. Y; TING, C. S.Physical review. B, Condensed matter. 1990, Vol 41, Num 12, pp 8533-8536, issn 0163-1829Article

Transmission coefficient and resonance condition in a symmetrical rectangular triple-barrier structureYAMAMOTO, H; KANIE, Y.Physica status solidi. B. Basic research. 1990, Vol 160, Num 2, pp K97-K102, issn 0370-1972Article

Analysis of second level resonant tunneling diodes and transistorsSCHULMAN, J. N; WALDNER, M.Journal of applied physics. 1988, Vol 63, Num 8, pp 2859-2861, issn 0021-8979, 1Article

Differential conductance in three-dimensional resonant tunnelingKALMEYER, V; LAUGHLIN, R. B.Physical review. B, Condensed matter. 1987, Vol 35, Num 18, pp 9805-9808, issn 0163-1829Article

Inelastic electron tunneling spectra in Pb-GaS_xSe_1-x-Pb junctionsYAMAGUCHI, K; NISHINA, Y.Journal of the Physical Society of Japan. 1984, Vol 53, Num 12, pp 4257-4265, issn 0031-9015Article

Temperature dependent transport measurements on strained Si/Si_1-xFe_x resonant tunneling devicesGENNSER, U; KESAN, V. P; IYER, S. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2059-2063, issn 0734-211XConference Paper

Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodesVAN DE ROER, T. G; KWASPEN, J. J. M; JOOSTEN, H et al.Physica. B, Condensed matter. 1991, Vol 175, Num 1-3, pp 301-306, issn 0921-4526Conference Paper

Optical-tunneling time measures : a microwave modelRANFAGNI, A; MUGNAI, D; FABENI, P et al.Physica. B, Condensed matter. 1991, Vol 175, Num 1-3, pp 283-286, issn 0921-4526Conference Paper

A theoretical study of multidimensional nuclear tunneling in malonaldehydeSHIDA, N; BARBARA, P. F; ALMLOF, J. E et al.The Journal of chemical physics. 1989, Vol 91, Num 7, pp 4061-4072, issn 0021-9606, 12 p.Article

Resonant tunneling in double-barrier parabolic well structuresNEOFOTISTOS, G; HONG GUO; DIFF, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 745-749, issn 0018-9383, 5 p.Article

Room-temperature operation of AIGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxySCHNELL, R. D; TEWS, H; NEUMANN, R et al.Electronics Letters. 1989, Vol 25, Num 13, pp 830-831, issn 0013-5194, 2 p.Article

A resonant-tunneling bipolar transistor (RBT)―a new functional device with high current gainFUTATSUGI, T; YAMAGUCHI, Y; IMAMURA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 2, pp L131-L133, issn 0021-4922, 2Article

dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistorNAJJAR, F. E; RADULESCU, D. C; CHEN, Y.-K et al.Applied physics letters. 1987, Vol 50, Num 26, pp 1915-1917, issn 0003-6951Article

Circuit simulation of resonant tunneling double-barrier diodeLIU, H. C.Journal of applied physics. 1988, Vol 64, Num 9, pp 4792-4794, issn 0021-8979Article