Deformation potential and intervalley scattering: hot-electron transistor analysisSRINIVASAN KRISHNAMURTHY; SHER, A; CHEN, A.-B et al.Applied physics letters. 1988, Vol 53, Num 19, pp 1853-1855, issn 0003-6951Article

Modeling hot-carrier effects in polysilicon emitter bipolar transistorsBURNETT, J. D; CHENMING HU.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2238-2244, issn 0018-9383Article

Structured base hot-electron transistorsHERBERT, D. C.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1129-1131, issn 0268-1242Article

Flip-flop circuit using a resonant-tunnelling hot electron transistor (RHET)YOKOHAMA, N; IMAMURA, K.Electronics Letters. 1986, Vol 22, Num 23, pp 1228-1229, issn 0013-5194Article

Transport of electrons in monolithic hot electron Si transistorsBERZ, F.Solid-state electronics. 1986, Vol 29, Num 12, pp 1213-1222, issn 0038-1101Article

Ballistic transport in hot-electron transistorsJINGMING XU; SHUR, M.Journal of applied physics. 1987, Vol 62, Num 9, pp 3816-3820, issn 0021-8979Article

Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctionsCAI, W; MARCHETTI, M. C; LAX, M et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1369-1372, issn 0163-1829Article

Monolithic superconductor-base hot-electron transistors with large current gainKOBAYASHI, T; SAKAI, H; TONOUCHI, M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 659-661, issn 0013-5194Article

Exact solution of a transport equation for hot-electron effects in semiconductors and metals = Solution exacte d'une équation de transport pour les effets des électrons chauds dans les semiconducteurs et les métauxSARKER, S. K; HU, Y.-K; STANTON, C. J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 17, pp 9229-9239, issn 0163-1829Article

Superconductor-base hot-electron transistor. I: Theory and designTONOUCHI, M; SAKAI, H; KOBAYASHI, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp 705-710, issn 0021-4922, 1Article

A new functional, resonant-tunneling hot electron transistor (RHET)YOKOYAMA, N; IMAMURA, K; MUTO, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 11, pp L853-L854, issn 0021-4922, 2Article

Hot electron device monitoring and characterisation: a reviewSANCHEZ, J. J; HSUEH, K; DE MASSA, T.A et al.IEE proceedings. Part I. Solid-state and electron devices. 1988, Vol 135, Num 5, pp 113-118, issn 0143-7100Article

On-chip refrigeration by evaporation of hot electrons at sub-Kelvin temperaturesLUUKANEN, A; LEIVO, M. M; SUOKNUUTI, J. K et al.Journal of low temperature physics. 2000, Vol 120, Num 3-4, pp 281-290, issn 0022-2291Article

Coupled Monte Carlo-Drift diffusion analysis of hot-electron effects in MOSFET'sHIGMAN, J. M; HESS, K; HWANG, C. G et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 930-937, issn 0018-9383, 8 p.Article

The effect of channel hot electron stress on a.c. device characteristics of MOSFETsKALNITSKY, A; SHARMA, S.Solid-state electronics. 1986, Vol 29, Num 10, pp 1053-1057, issn 0038-1101Article

Hot electron jets from femtosecond heated plasmas at intensities of 1016-1017 W/cm2FEDOSEJEVS, R; SERBANESCU, C; BYCHENKOV, V. Yu et al.Journal de physique. IV. 2006, Vol 133, pp 271-275, issn 1155-4339, 5 p.Conference Paper

Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscopeURAOKA, Y; HIRAI, N; YANO, H et al.IEDm : international electron devices meeting. 2002, pp 577-580, isbn 0-7803-7462-2, 4 p.Conference Paper

Reliability phenomena under AC stressCHENMING HU.Microelectronics and reliability. 1998, Vol 38, Num 1, pp 1-5, issn 0026-2714Article

Anisotropie de la température électronique provoquée par le réchauffement de la plasmasphère par des ondes cyclotroniques ioniquesKONIKOV, YU. V; KHAZANOV, G. V.Kosmičeskie issledovaniâ. 1988, Vol 26, Num 3, pp 413-419, issn 0023-4206Article

Spectrométrie de phonons des électrons chauds dans les couches métalliquesSHKLOVSKIJ, V. A.Fizika tverdogo tela. 1988, Vol 30, Num 4, pp 176-1178, issn 0367-3294Article

Proposal of electron diffraction transistorFURUYA, K; KURISHIMA, K; YAMAMOTO, T et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1988, Vol 71, Num 4, pp 286-288, issn 0387-236XConference Paper

Theory of hot-electron injection in CHINT/NERFET devicesGRINBERG, A. A; KASTALSKY, A; LURYI, S et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 409-419, issn 0018-9383Article

A self-consistent pseudo-two-dimensional model for hot-electron current in MOST'sTANAKA, S; SAITO, S; ATSUMI, S et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 6, pp 743-753, issn 0018-9383Article

Room temperature hot electron transistors with InAs-notched resonant-tunneling-diode injectorSEABAUGH, A; YUNG-CHUNG KAO; RANDALL, J et al.Japanese journal of applied physics. 1991, Vol 30, Num 5, pp 921-925, issn 0021-4922, 1Article

Ballistic hot-electron transistorsHEIBLUM, M; FISCHETTI, M. V.IBM journal of research and development. 1990, Vol 34, Num 4, pp 530-549, issn 0018-8646Article