Formation of optically active osmium silicide in silica using ion implantation and thermal annealingMITCHELL, L. J; HOLLAND, O. W; NEOGI, A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 23-25, pp 2408-2410, issn 0022-3093, 3 p.Conference Paper

Structure and electric conductivity of reduced lead-germanate, bismuth-germanate and bismuth-silicate glasses modified with potassiumGACKOWSKA, J; GAZDA, M; TRZEBIATOWSKI, K et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4319-4322, issn 0022-3093, 4 p.Conference Paper

Electronic properties of liquid noble metal-Si alloysOHNO, S; ISHIDA, K; OKADA, T et al.Journal of non-crystalline solids. 2007, Vol 353, Num 32-40, pp 3220-3225, issn 0022-3093, 6 p.Conference Paper

Influence of humidity on the electrical charging properties of cork agglomeratesLANCA, M. C; WIRGES, W; NEAGU, E. R et al.Journal of non-crystalline solids. 2007, Vol 353, Num 47-51, pp 4501-4505, issn 0022-3093, 5 p.Conference Paper

Constant photocurrent method and time-of-flight measurements applied to polymer blendsWILLEKENS, J; BRINZA, M; AERNOUTS, T et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1675-1678, issn 0022-3093, 4 p.Conference Paper

I-V characteristic and magnetoresistance of homogeneous materialsPAPADOPOULOS, G. J.Journal of non-crystalline solids. 2006, Vol 352, Num 40-41, pp 4206-4213, issn 0022-3093, 8 p.Conference Paper

A new approach to describe the electrical ageing by considering the distributed nature of processes in polymeric materialsLAHOUD, N; BOUDOU, L; MARTINEZ-VEGA, J et al.Journal of non-crystalline solids. 2010, Vol 356, Num 11-17, pp 652-656, issn 0022-3093, 5 p.Conference Paper

Electronic conduction in (Bi,Pb)-Sr-Ca-Cu-O granular superconductorsGAZDA, M; KUSZ, B; MURAWSKI, L et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4323-4325, issn 0022-3093, 3 p.Conference Paper

Bulk metallic glass formation in Cu-Zr-Ti ternary systemQING WANG; JIANBING QIANG; YINGMIN WANG et al.Journal of non-crystalline solids. 2007, Vol 353, Num 32-40, pp 3425-3428, issn 0022-3093, 4 p.Conference Paper

Normal spectral emissivities of liquid copper, liquid gold and liquid silver at 684.5 nmCAGRAN, C; POTTLACHER, G.Journal of non-crystalline solids. 2007, Vol 353, Num 32-40, pp 3582-3586, issn 0022-3093, 5 p.Conference Paper

Tunneling injection temperature dependence in EEPROM cellZAHI, Y; LAFFONT, R; LALANDE, F et al.Journal of non-crystalline solids. 2007, Vol 353, Num 5-7, pp 648-652, issn 0022-3093, 5 p.Conference Paper

1/f Conductance noise in stabilized amorphous seleniumMAJID, Shaikh Hasibul; JOHANSON, Robert E.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1574-1577, issn 0022-3093, 4 p.Conference Paper

New approach to capacitance spectroscopy for interface characterizatio of a-Si:H/c-Si heterojunctionsGUDOVSKIKH, A. S; KLEIDER, J. P; STANGI, R et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1213-1216, issn 0022-3093, 4 p.Conference Paper

Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layersGUEUNIER-FARRET, M. E; KLEIDER, J. P; VOIGT, F et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1101-1104, issn 0022-3093, 4 p.Conference Paper

Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation methodNENG WAN; TAO WANG; HONGCHENG SUN et al.Journal of non-crystalline solids. 2010, Vol 356, Num 18-19, pp 911-916, issn 0022-3093, 6 p.Article

Ferromagnetic insulating and reentrant spin glass behavior in Mg doped La_0.75Sr_0.25MnO₃ manganitesKAMELI, P; SALAMATI, H; HEIDARIAN, A et al.Journal of non-crystalline solids. 2009, Vol 355, Num 16-17, pp 917-921, issn 0022-3093, 5 p.Article

Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructuresNAZRUL ISLAM, Md; RAM, Sanjay K; KUMAR, Satyendra et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 6, pp 1025-1028, issn 1386-9477, 4 p.Article

Experimental ordering potential of manganese-polyvalent metalsGROSDIDIER, B; BEN ABDELLAH, A; GASSER, J. G et al.Journal of non-crystalline solids. 2007, Vol 353, Num 32-40, pp 3069-3073, issn 0022-3093, 5 p.Conference Paper

Hopping current density in amorphous carbon/crystalline silicon heterojunctionsKATSUNO, T; GODET, C; LOIR, A. S et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1421-1424, issn 0022-3093, 4 p.Conference Paper

Improvement of the electrical properties of Se₃Te₁ thin films by In additionsALY, K. A; ABD ELNAEIM, A. M; AFIFY, N et al.Journal of non-crystalline solids. 2012, Vol 358, Num 20, pp 2759-2763, issn 0022-3093, 5 p.Article

Microstructure and dielectric properties of La₂O₃films prepared by ion beam assistant electron-beam evaporationCHEN YANG; HUIQING FAN; SHAOJUN QIU et al.Journal of non-crystalline solids. 2009, Vol 355, Num 1, pp 33-37, issn 0022-3093, 5 p.Article

Structure and electrical properties of nitrided NbN-TiN sol-gel derived filmsKOSCIELSKA, B; WINIARSKI, A; KUSZ, B et al.Journal of non-crystalline solids. 2009, Vol 355, Num 24-27, pp 1342-1346, issn 0022-3093, 5 p.Conference Paper

Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopyKORTE, L; SCHMIDT, M.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2138-2143, issn 0022-3093, 6 p.Conference Paper

Mechanisms of dc-current transfer in tris(acetylacetonato)iron(III) filmsDAKHEL, A. A.Journal of non-crystalline solids. 2007, Vol 353, Num 16-17, pp 1529-1533, issn 0022-3093, 5 p.Article

Multiple phase-transition in Ge₂Sb₂Te₅ based phase change memory cell by current-voltage measurementLIANGCAI WU; ZHITANG SONG; BO LIU et al.Journal of non-crystalline solids. 2007, Vol 353, Num 44-46, pp 4043-4047, issn 0022-3093, 5 p.Article