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ct.\*:("Electrical properties of specific thin films")

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Formation and characterization of conductive thin layers of copper sulfide (CuxS) on the surface of polyethylene and polyamide by the use of higher polythionic acidsANCUTIENE, Ingrida; JANICKIS, Vitalijus; IVANAUSKAS, Remigijus et al.Applied surface science. 2006, Vol 252, Num 12, pp 4218-4225, issn 0169-4332, 8 p.Article

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperatureAYDOGAN, S; SAGLAM, M; TÜRÜT, A et al.Applied surface science. 2005, Vol 250, Num 1-4, pp 43-49, issn 0169-4332, 7 p.Article

Valence reduction process from sol-gel V2O5 to VO2 thin filmsYUAN NINGYI; LI JINHUA; LIN CHENGLU et al.Applied surface science. 2002, Vol 191, Num 1-4, pp 176-180, issn 0169-4332Article

The electrical conductivity of zircaloy oxide filmsHOWLADER, M. M. R; SHIIYAMA, K; KINOSHITA, C et al.Journal of nuclear materials. 1998, Vol 253, pp 149-155, issn 0022-3115Conference Paper

Etude des phénomènes de conduction et de commutation des films minces sous les effets combinés de champ électrique et de pression = Study of conduction and switching phenomena in thin films under pressure and electrical field combined effectsEl Allam, Toufiq; Hoang, The Giam.1997, 127 p.Thesis

Electrical conductivity of individual carbon nanotubesEBBESEN, T. W; LEZEC, H. J; HIURA, H et al.Nature (London). 1996, Vol 382, Num 6586, pp 54-56, issn 0028-0836Article

Estimation of the density of localized states of a-Se100-xBix films from electrical propertiesMAJEED KHAN, M. A; ZULFEQUAR, M; HUSAIN, M et al.Physica. B, Condensed matter. 2002, Vol 322, Num 1-2, pp 1-11, issn 0921-4526Article

Structural and electrical properties of InSb epitaxial films grown on GaAs by low-pressure MOCVDBYUENG-SU YOO; MCKEE, M. A; SANG-GI KIM et al.Solid state communications. 1993, Vol 88, Num 6, pp 447-450, issn 0038-1098Article

Electrical properties of silicon nitride films deposited by catalytic chemical vapor deposition on catalytically nitrided Si(100)KIKKAWA, Akiko; MORIMOTO, Rui; IZUMI, Akira et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 100-103, issn 0040-6090, 4 p.Conference Paper

Rapid synthesis and characterization of (Ca1-xBax)3Co4O9 thin films using combinatorial methodsMINAMI, H; ITAKA, K; KAWAJI, H et al.Applied surface science. 2002, Vol 197-98, pp 442-447, issn 0169-4332, 6 p.Conference Paper

Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structuresSCHAADT, D. M; YU, E. T; SANKAR, S et al.Journal of electronic materials. 2000, Vol 29, Num 11, pp 1299-1303, issn 0361-5235Article

Electrical behaviour of thermally evaporated chloroaluminium phthalocyanineAZIM-ARAGHI, M. E; KRIER, A; ABASS, A. K et al.Semiconductor science and technology. 1997, Vol 12, Num 12, pp 1625-1629, issn 0268-1242Article

I-V characteristics of ultrathin Ag-SiO multilayer structuresAL-SHARE, Mohammad A; ABU EL-HAIJA, A. J.Physica. B, Condensed matter. 2002, Vol 315, Num 1-3, pp 157-163, issn 0921-4526Article

Experimental study of saddle point conductance in strongly disordered si-metal nitride oxide semiconductor structure at high magnetic fieldsDAVYDOV, A; CHUMAKOV, N; ARONZON, B et al.Physica. B, Condensed matter. 2001, Vol 298, Num 1-4, pp 491-495, issn 0921-4526Conference Paper

Highly electrical conductivity of hybrid Langmuir-Blodgett films of transition metal dichalcogenide and amphiphilic compoundsTACHIBANA, Hiroaki; YAMANAKA, Yasushi; SAKAI, Hideki et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 2000, Vol 341, pp 137-142, issn 1058-725XConference Paper

Topographie und elektrische Eigenschaften von InAs-Quantenpunkten = Topography and electrical properties of InAs quantum dotsSCHMIDT, K. H; VERSEN, M; BOCK, C et al.Materialwissenschaft und Werkstofftechnik. 2000, Vol 31, Num 9, pp 837-844, issn 0933-5137Conference Paper

Characterization of multilayered Ti/TiN films grown by chemical vapor depositionHU, J. C; CHANG, T. C; CHEN, L. J et al.Thin solid films. 1998, Vol 332, Num 1-2, pp 423-427, issn 0040-6090Conference Paper

Layer systems on the base of nitrogen-doped tantalum and niobium with enhanced stabilityFEDORENKO, A. I; STARIKOV, V. V; POZDEEV, YU. L et al.Crystal research and technology (1979). 1997, Vol 32, Num 6, pp 843-848, issn 0232-1300Article

The constructive procedure for solving the problems of electron transport in the multi-layer specimens for the normally incident electron beam. I: Solution of the model transport equations for a point beam: energy and charge depositionMAGLEVANNY, I; SMOLAR, V.Vacuum. 1995, Vol 46, Num 11, pp 1261-1269, issn 0042-207XArticle

Electrical properties of the p+-gate electrode of an a-Si/poly-Si double layerSUN-OO KIM; KI-JOON KIM; HYOUNG SUB KIM et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 413-418, issn 0040-6090Conference Paper

Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vaporMEIHAN WANG; HAO LEI; SEKI, Yoshiyuki et al.Journal of thermal analysis and calorimetry. 2013, Vol 111, Num 2, pp 1457-1461, issn 1388-6150, 5 p.Article

Monte Carlo study of transport properties in copper halidesSEKKAL, W; ZAOUI, A.Physica. B, Condensed matter. 2002, Vol 315, Num 1-3, pp 201-209, issn 0921-4526Article

Electrical transport properties of semiconducting rhenium silicide thin films on silicon(111)ALI, I; MURET, P; HAYDAR, A et al.Semiconductor science and technology. 2001, Vol 16, Num 12, pp 966-971, issn 0268-1242Article

Effect of strains on electrical and optical properties of thin La0.67Ca0.33MnO3 filmsVENGALIS, B; MANEIKIS, A; ANISIMOVAS, F et al.Journal of magnetism and magnetic materials. 2000, Vol 211, Num 1-3, pp 35-40, issn 0304-8853Conference Paper

Electron propagation along a nanowire: a study in chatteringRUNGE, K; SUMPTER, B. G; NOID, D. W et al.Nanotechnology (Bristol. Print). 1998, Vol 9, Num 4, pp 365-368, issn 0957-4484Article

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