TEMPERATURE-RAMP RESISTANCE ANALYSIS TO CHARACTERIZE ELECTROMIGRATIONPASCO RW; SCHWARZ JA.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 445-452; BIBL. 18 REF.Article

Diffusion to a slowly growing truncated sphere on a substrateBOBBERT, P. A; WIND, M. M; VLIEGER, J et al.Physica. A. 1987, Vol 141, Num 1, pp 58-72, issn 0378-4371Article

Simulation of edge effects in electroanalytical experiments by orthogonal collocation. V: Chronoamperometry at ultramicroelectrode ensemblesCASSIDY, J; JAMAL GHOROGHCHIAN; SARFARAZI, F et al.Canadian journal of chemistry (Print). 1985, Vol 63, Num 12, pp 3577-3581, issn 0008-4042Article

Electrolytical diffusion of antimony in siliconRUIZ, J. C; MARTINEZ, J. L; URIAS, J et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1073-1075, issn 0003-6951Article

Transient convective diffusion to a rotating disk electrode: reciprocity relationshipSCHERSON, D; EKARDT, W.Journal of electroanalytical chemistry and interfacial electrochemistry. 1983, Vol 157, Num 1, pp 129-133, issn 0022-0728Article

On Sorbello's corrections to the new electromigration theoryLODDER, A.Solid state communications. 1991, Vol 79, Num 2, pp 147-148, issn 0038-1098Article

Electromigration-induced via failure assisted by neighboring clustersCHOI, In-Suk; PARK, Young-Joon; JOO, Young-Chang et al.Scripta materialia. 2002, Vol 46, Num 3, pp 247-251, issn 1359-6462, 5 p.Article

Electromigration failure due to interfacial diffusion in fine Al alloy linesHU, C.-K; SMALL, M. B; RODBELL, K. P et al.Applied physics letters. 1993, Vol 62, Num 9, pp 1023-1025, issn 0003-6951Article

Electrothermomigration and filament growth in p-InP with Au contactsBRASEN, D; VAIDYA, S; KAMMLOTT, G. W et al.Journal of applied physics. 1984, Vol 56, Num 12, pp 3399-3403, issn 0021-8979Article

Migration and diffusion of binary electrolytes under a constant current IIKYUNG-HEE LIM; FRANCES, E. I.Chemical engineering communications (Print). 1983, Vol 22, Num 3-4, pp 181-203, issn 0098-6445Article

A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currentsHARRISON, J. W. JR.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2170-2179, issn 0018-9383Article

Effet de diffusion longitudinale au bord de fuite d'un anémomètre d'électrodiffusionVAJN, O; WEIN, O; KOVALEVSKAYA, N. D et al.Collection of Czechoslovak chemical communications. 1987, Vol 52, Num 3, pp 634-647, issn 0010-0765Article

An analytical solution of the nonsteady convective diffusion equation for rotating electrodesDESLOUIS, C; GABRIELLI, C; TRIBOLLET, B et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 10, pp 2044-2046, issn 0013-4651Article

Au sujet de la relation entre l'épaisseur de la couche diffuse et la densité du courantROTINYAN, A. L; SHOSHINA, I. A.Èlektrohimiâ. 1983, Vol 19, Num 11, issn 0424-8570, 1596Article

ELECTROMIGRATION OF AU AND AG IN LEAD.HSIEH MY; HUNTINGTON HB; JEFFERY RN et al.1977; CRYST. LATTICE DEFECTS; G.B.; DA. 1977; VOL. 7; NO 1; PP. 9-22; BIBL. 46 REF.Article

Complex shape evolution of electromigration-driven single-layer islandsKUHN, Philipp; KRUG, Joachim; HAUSSER, Frank et al.Physical review letters. 2005, Vol 94, Num 16, pp 166105.1-166105.4, issn 0031-9007Article

Diffusion to fractal surfacesNYIKOS, L; PAJKOSSY, T.Electrochimica acta. 1986, Vol 31, Num 10, pp 1347-1350, issn 0013-4686Article

Electromigration-induced failure in passivated aluminum-based metallizations : the dependence on temperature and current densityLI, C.-Y; BØRGESEN, P; KORHONEN, M. A et al.Applied physics letters. 1992, Vol 61, Num 4, pp 411-413, issn 0003-6951Article

Investigation of p-n junctions in n-Si obtained by electromigration of Al through a thin SiO₂ filmISKENDER-ZADE, Z. A; ABDULLAYEV, A. G; JAFAROVA, E. A et al.Solid state communications. 1984, Vol 49, Num 3, pp 273-276, issn 0038-1098Article

A hydrodynamic model for mass transfer at gas evolving electrodesNGOYA, F. N.Electrochimica acta. 1983, Vol 28, Num 12, pp 1865-1868, issn 0013-4686Article

ELECTRODEPOSITION OF SILICON ONTO GRAPHITERAO GM; ELWELL D; FEIGELSON RS et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1708-1711; BIBL. 8 REF.Article

TEM IN-SITU OBSERVATION OF ELECTROMIGRATION IN AL STRIPES WITH QUASI-BAMBOOSTRUCTUREVAVRA I; LOBOTKA P.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. K107-K108; H.T. 1; BIBL. 3 REF.Article

LEBENSDAUERBEEINFLUSSUNG VON INTEGRIERTEN SCHALTKREISEN DURCH ELEKTRO- UND THERMOTRANSPORT = EFFET DE L'ELECTRO- ET DU THERMOTRANSPORT SUR LA DUREE DE VIE DES CIRCUITS INTEGRESKLEINN W.1981; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1981; VOL. 72; NO 9; PP. 615-622; ABS. ENG; BIBL. 52 REF.Article

A newly investigated approach for the control of tunnel resistance of nanogaps using field-emission-induced electromigrationTAKIYA, Kazutoshi; TOMODA, Yusuke; KUME, Watari et al.Applied surface science. 2012, Vol 258, Num 6, pp 2028-2032, issn 0169-4332, 5 p.Conference Paper

The effects of anodic and cathodic processes on the characteristics of ceramic coatings formed on titanium alloy through the MAO coating technologyXUETONG SUN; ZHAOHUA JIANG; ZHONGPING YAO et al.Applied surface science. 2005, Vol 252, Num 2, pp 441-447, issn 0169-4332, 7 p.Article