On the properties of hot electrons in semiconductor quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 30, pp 5357-5365, issn 0022-3719Article

Deformation potential and intervalley scattering: hot-electron transistor analysisSRINIVASAN KRISHNAMURTHY; SHER, A; CHEN, A.-B et al.Applied physics letters. 1988, Vol 53, Num 19, pp 1853-1855, issn 0003-6951Article

Modeling hot-carrier effects in polysilicon emitter bipolar transistorsBURNETT, J. D; CHENMING HU.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2238-2244, issn 0018-9383Article

Structured base hot-electron transistorsHERBERT, D. C.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1129-1131, issn 0268-1242Article

MESURE DU TEMPS DE RELAXATION PHENOMENOLOGIQUE DES ELECTRONS CHAUDS DANS SI N A 77^OKDARGIS A YU; BANIS T YA.1972; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1972; VOL. 12; NO 4; PP. 633-643; ABS. LITU. ANGL.; BIBL. 18 REF.Serial Issue

Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctionsCAI, W; MARCHETTI, M. C; LAX, M et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1369-1372, issn 0163-1829Article

Lucky-electron model of channel hot-electron injection in MOSFETsTAM, S; PING-KEUNG KO; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1116-1125, issn 0018-9383Article

Transport of electrons in monolithic hot electron Si transistorsBERZ, F.Solid-state electronics. 1986, Vol 29, Num 12, pp 1213-1222, issn 0038-1101Article

Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlatticesFASOL, G; PLOOG, K; BAUSER, E et al.Solid state communications. 1985, Vol 54, Num 5, pp 383-387, issn 0038-1098Article

Evaluation of LDD MOSFET's based on hot-electron-induced degradationHSU, F.-C; CHIU, K.-Y.IEEE electron device letters. 1984, Vol 5, Num 5, pp 162-165, issn 0741-3106Article

Flip-flop circuit using a resonant-tunnelling hot electron transistor (RHET)YOKOHAMA, N; IMAMURA, K.Electronics Letters. 1986, Vol 22, Num 23, pp 1228-1229, issn 0013-5194Article

Hot-electron memory effect in double-leyered heterostructuresLURYI, S; KASTALSKY, A; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1294-1296, issn 0003-6951Article

Ballistic transport in hot-electron transistorsJINGMING XU; SHUR, M.Journal of applied physics. 1987, Vol 62, Num 9, pp 3816-3820, issn 0021-8979Article

Direct measurement of the energy distribution of hot electrons in silicon dioxideBRORSON, S. D; DIMARIA, D. J; FISCHETTI, M. V et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1302-1313, issn 0021-8979Article

A Graphene-Based Hot Electron TransistorVAZIRI, Sam; LUPINA, Grzegorz; HENKEL, Christoph et al.Nano letters (Print). 2013, Vol 13, Num 4, pp 1435-1439, issn 1530-6984, 5 p.Article

Hot electron device monitoring and characterisation: a reviewSANCHEZ, J. J; HSUEH, K; DE MASSA, T.A et al.IEE proceedings. Part I. Solid-state and electron devices. 1988, Vol 135, Num 5, pp 113-118, issn 0143-7100Article

Hot electron stabilization of a helically symmetric plasmaMILLER, R. L.The Physics of fluids. 1986, Vol 29, Num 4, pp 1176-1180, issn 0031-9171Article

Effect of hot-electron stress on low frequency MOSFET noisePIMBLEY, J. M; GILDENBLAT, G.IEEE electron device letters. 1984, Vol 5, Num 9, pp 345-347, issn 0741-3106Article

Reduced hot electron effects in MOSFET's with an optimized LDD structureBAGLEE, D. A; DUVVURY, C.IEEE electron device letters. 1984, Vol 5, Num 10, pp 389-391, issn 0741-3106Article

Temperature dependence of hot-electron-induced degradation in MOSFET'sHSU, F.-C; CHIU, K.-Y.IEEE electron device letters. 1984, Vol 5, Num 5, pp 148-150, issn 0741-3106Article

Hot electron energy distribution in one-dimensional cannonball target at 10.6 μm laser wavelengthTERAI, K; DAIDO, H; FUJITA, M et al.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L445-L448, issn 0021-4922Article

Tunneling hot electron transistor using GaAs/AlGaAs heterojunctionsYOKOYAMA, N; IMAMURA, K; OHSHIMA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L311-L312, issn 0021-4922, 2Article

Hot-electron noise generation in gallium-arsenide Schottky-barrier diodesKEEN, N. J; ZIRATH, H.Electronics Letters. 1983, Vol 19, Num 20, pp 853-854, issn 0013-5194Article

Hot-electron picture of light emission from tunnel junctionsKIRTLEY, J. R; THEIS, T. N; TSANG, J. C et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4601-4611, issn 0163-1829Article

Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixersRYABCHUN, Sergey; TONG, Cheuk-Yu Edward; BLUNDELL, Raymond et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63730J.1-63730J.5, issn 0277-786X, isbn 0-8194-6471-6, 1VolConference Paper