kw.\*:("Electron hole plasma")
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Plasma generation in silicon-based inductive grid arraysKONTOGEORGOS, A. A; KORFIATIS, D. P; THOMA, K. A. Th et al.Optics and lasers in engineering. 2009, Vol 47, Num 11, pp 1195-1198, issn 0143-8166, 4 p.Article
Dynamics of electron-hole plasmas and localized excitons in highly excited GaN-based ternary alloysHIRANO, D; KANEMITSU, Y.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 712-714, issn 0022-2313, 3 p.Conference Paper
Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditionsICHIDA, H; WAKAIKI, S; MIZOGUCHI, K et al.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 1059-1061, issn 0022-2313, 3 p.Conference Paper
Photon-exchange energy transfer of an electron―hole plasma between quasi-two-dimensional semiconductor layersLYO, S. K.Journal of luminescence. 2012, Vol 132, Num 11, pp 3035-3041, issn 0022-2313, 7 p.Article
Dynamics of high-density excitons and electron-hole plasma in ZnO epitaxial thin filmsARAI, Nobuyuki; TAKEDA, Jun; KO, Hang-Ju et al.Journal of luminescence. 2006, Vol 119-20, pp 346-349, issn 0022-2313, 4 p.Conference Paper
Integro-differential equations for the volution in the athermal pre-electron-hole plasma state of an irradiated direct semiconductorHEINER, E.Physica status solidi. B. Basic research. 1987, Vol 144, Num 2, pp 653-660, issn 0370-1972Article
Exciton-plasma transition in GaAsCOLLET, J.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 4, pp 417-422, issn 0022-3697Article
Current injected electron-hole plasma in GaP pin-device structuresBOGATZ, A; SCHWABE, R; JACOBS, K et al.Solid state communications. 1984, Vol 52, Num 4, pp 435-439, issn 0038-1098Article
Role of electron-hole pairs in the mechanisms of desorption from semiconductor surfacesWAUTELET, M.Surface science. 1983, Vol 133, Num 1, pp L437-L440, issn 0039-6028Article
Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article
Photoluminescence study of confined electron hole plasma in GaxIn1-xAs heterostructuresGAL, M; VINER, J. M; TAYLOR, P. C et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 948-953, issn 0021-8979Article
Echauffement du plasma d'électrons-trous dans des hétérostructures doublesLUBASHEVSKIJ, I. A; RYZHIJ, V. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2031-2034, issn 0015-3222Article
Pattern formation as a signature of quantum degeneracy in a cold exciton systemLEVITOV, L. S; SIMONS, B. D; BUTOV, L. V et al.Physical review letters. 2005, Vol 94, Num 17, pp 176404.1-176404.4, issn 0031-9007Article
Impact-ionized electron-hole plasma instability in GaAsMICKEVICIUS, R; REKLAITIS, A.International journal of infrared and millimeter waves. 1985, Vol 6, Num 3, pp 235-248, issn 0195-9271Article
Rôle des microinclusions absorbantes dans le mécanisme de rupture par laser de diélectriques à bande largeBABADZHAN, E. I; KOSACHEV, V. V; LOKHOV, YU. N et al.Fizika i himiâ obrabotki materialov. 1985, Num 1, pp 20-25, issn 0015-3214Article
Natural damping of nonlocal surface Bernstein modes in the high-magnetic-field quantum limitGUMBS, G.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 4009-4011, issn 0163-1829Article
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitationLU, Y. M; LIANG, H. W; SHEN, D. Z et al.Journal of luminescence. 2006, Vol 119-20, pp 228-232, issn 0022-2313, 5 p.Conference Paper
Time-resolved phonon-sideband spectroscopyCHERNIKOV, Alexej; FELDTMANN, Thomas; CHATTERJEE, Sangam et al.Solid state communications. 2010, Vol 150, Num 37-38, pp 1733-1736, issn 0038-1098, 4 p.Article
APPLICATIONS OF PHOTOCONDUCTIVITY MEASUREMENTS IN N-INSB UNDER CROSSED FIELDSSCHNEIDER W; BEHLER K.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 17; NO 3; PP. 249-256; BIBL. 16 REF.Article
DISTRIBUTION SPATIALE D'UN PLASMA D'ELECTRONS-TROUS FORTEMENT DEGENERE DANS LA REGION DE LA BASE D'UNE HETEROSTRUCTUREAZIMOV SA; KATULEVSKIJ YU A; MUMINOV RA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1144-1149; BIBL. 8 REF.Article
Theory of formation of an ensemble of nanoclusters on the surface of CdTe crystals irradiated by a laser pulseEMEL'YANOV, V. I; BAIDULLAEVA, A; VLASENKO, A. I et al.Quantum electronics (Woodbury). 2008, Vol 38, Num 3, pp 245-250, issn 1063-7818, 6 p.Article
Ultrafast optical modulators based on the nonlinear optical response of an electron - hole plasmaERMOLENKO, M. V; STANKEVICH, V. V; BUGANOV, O. V et al.Quantum electronics (Woodbury). 2009, Vol 39, Num 4, pp 361-366, issn 1063-7818, 6 p.Article
The relation between light absorption and luminescence in laser cooling of two-dimensional semiconductor systemsKWONG, N. H; RUPPER, G; GU, B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64510I.1-64610I.6, issn 0277-786X, isbn 978-0-8194-6574-0, 1VolConference Paper
Electron-hole plasma and its pulsation luminescence in CuBrMASUMOTO, Y; IKEZAWA, M.Solid state communications. 1998, Vol 105, Num 3, pp 151-154, issn 0038-1098Article
Band-gap dynamics and nonlinear propagation of optical pulses in CdTeCOLLET, J. H; PUGNET, M; RÜHLE, W. W et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1815-1819, issn 0021-8979Article