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Results 1 to 25 of 638

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Plasma generation in silicon-based inductive grid arraysKONTOGEORGOS, A. A; KORFIATIS, D. P; THOMA, K. A. Th et al.Optics and lasers in engineering. 2009, Vol 47, Num 11, pp 1195-1198, issn 0143-8166, 4 p.Article

Collective excitations in intercalated compoundsKOBAYASHI, M; TAKAHASHI, T.Journal of the Physical Society of Japan. 1985, Vol 54, Num 1, pp 25-28, issn 0031-9015Article

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor depositionDEMICHEL, O; OEHLER, F; CALVO, V et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 6, pp 963-965, issn 1386-9477, 3 p.Article

Dynamics of electron-hole plasmas and localized excitons in highly excited GaN-based ternary alloysHIRANO, D; KANEMITSU, Y.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 712-714, issn 0022-2313, 3 p.Conference Paper

Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditionsICHIDA, H; WAKAIKI, S; MIZOGUCHI, K et al.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 1059-1061, issn 0022-2313, 3 p.Conference Paper

Photon-exchange energy transfer of an electron―hole plasma between quasi-two-dimensional semiconductor layersLYO, S. K.Journal of luminescence. 2012, Vol 132, Num 11, pp 3035-3041, issn 0022-2313, 7 p.Article

Dynamics of high-density excitons and electron-hole plasma in ZnO epitaxial thin filmsARAI, Nobuyuki; TAKEDA, Jun; KO, Hang-Ju et al.Journal of luminescence. 2006, Vol 119-20, pp 346-349, issn 0022-2313, 4 p.Conference Paper

Strong dephasing in a laser excited semiconductor due to carrier-plasmon scatteringMANZKE, G; MOLDZIO, U; HENNEBERGER, K et al.Physica status solidi. B. Basic research. 1997, Vol 202, Num 2, pp 961-976, issn 0370-1972Conference Paper

Stochastic self-oscillations in a two-temperature electron-hole plasma in a semiconductorBONCH-BRUEVICH, V. L; LE VU KY.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp 111-116, issn 0370-1972Article

Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in SiTSEN, K. T.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 4134-4136, issn 0163-1829Article

Collective modes of an electron-hole system in a magnetic field. IIINOTO, H.Journal of the Physical Society of Japan. 1985, Vol 54, Num 9, pp 3472-3477, issn 0031-9015Article

Expansion of the electron-hole liquid plasma at GaAs surfaceKORBUTYAK, D. V; LITOVCHENKO, V. G.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 87-97, issn 0370-1972Article

Integro-differential equations for the volution in the athermal pre-electron-hole plasma state of an irradiated direct semiconductorHEINER, E.Physica status solidi. B. Basic research. 1987, Vol 144, Num 2, pp 653-660, issn 0370-1972Article

Exciton-plasma transition in GaAsCOLLET, J.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 4, pp 417-422, issn 0022-3697Article

Current injected electron-hole plasma in GaP pin-device structuresBOGATZ, A; SCHWABE, R; JACOBS, K et al.Solid state communications. 1984, Vol 52, Num 4, pp 435-439, issn 0038-1098Article

Role of electron-hole pairs in the mechanisms of desorption from semiconductor surfacesWAUTELET, M.Surface science. 1983, Vol 133, Num 1, pp L437-L440, issn 0039-6028Article

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Photoluminescence study of confined electron hole plasma in GaxIn1-xAs heterostructuresGAL, M; VINER, J. M; TAYLOR, P. C et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 948-953, issn 0021-8979Article

Echauffement du plasma d'électrons-trous dans des hétérostructures doublesLUBASHEVSKIJ, I. A; RYZHIJ, V. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2031-2034, issn 0015-3222Article

Pattern formation as a signature of quantum degeneracy in a cold exciton systemLEVITOV, L. S; SIMONS, B. D; BUTOV, L. V et al.Physical review letters. 2005, Vol 94, Num 17, pp 176404.1-176404.4, issn 0031-9007Article

Impact-ionized electron-hole plasma instability in GaAsMICKEVICIUS, R; REKLAITIS, A.International journal of infrared and millimeter waves. 1985, Vol 6, Num 3, pp 235-248, issn 0195-9271Article

Rôle des microinclusions absorbantes dans le mécanisme de rupture par laser de diélectriques à bande largeBABADZHAN, E. I; KOSACHEV, V. V; LOKHOV, YU. N et al.Fizika i himiâ obrabotki materialov. 1985, Num 1, pp 20-25, issn 0015-3214Article

Natural damping of nonlocal surface Bernstein modes in the high-magnetic-field quantum limitGUMBS, G.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 4009-4011, issn 0163-1829Article

Collective elementary excitations of Bose-Einstein condensed magnetoexcitons interacting with strongly correlated electron-hole plasmaBOTAN, Vitalie; MOSKALENKO, Sveatoslav A; JOHANSSON, Börje et al.Physica. B, Condensed matter. 2006, Vol 378-80, pp 1041-1042, issn 0921-4526, 2 p.Conference Paper

Excitonic properties of vertically aligned ZnO nanotubes under high-density excitationLU, Y. M; LIANG, H. W; SHEN, D. Z et al.Journal of luminescence. 2006, Vol 119-20, pp 228-232, issn 0022-2313, 5 p.Conference Paper

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