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Spin relaxation in semiconductor quantum rings and dots: a comparative studyZIPPER, Elzbieta; KURPAS, Marcin; SADOWSKI, Janusz et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 11, issn 0953-8984, 115302.1-115302.7Article

Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructuresRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 23, pp 5813-5827, issn 0953-8984Article

Finite-barrier height effect on the polarizability of a shallow magneto-donor in a quantum boxEL MESSAOUDI, K; ZOUNOUBI, A; ZORKANI, I et al.Physica status solidi. B. Basic research. 2002, Vol 233, Num 2, pp 270-279, issn 0370-1972Article

Effect of a charged impurity on a system of three vertically coupled quantum dotsZHANG, Z. J; QIAO, H. X; LI, B. W et al.Physica. B, Condensed matter. 2003, Vol 325, Num 1-4, pp 333-339, issn 0921-4526, 7 p.Article

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wellsRODRIGUES, S. C. P; SIPAHI, G. M; SCOLFARO, L. M. R et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 106-113, issn 0921-4526Conference Paper

Physics of metal-corrrelated barrier with chemical modulation-metal heterostructureGUPTA, Tribikram; GUPTA, Sanjay.Physica. B, Condensed matter. 2014, Vol 449, pp 220-224, issn 0921-4526, 5 p.Article

Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dotsSTAVROU, V. N; VEROPOULOS, G. P.Solid state communications. 2014, Vol 191, pp 10-13, issn 0038-1098, 4 p.Article

Exciton in vertically coupled type II quantum dots in threading magnetic fieldMENDOZA-CANTILLO, J; ESCORCIA-SALAS, G. Elizabeth; MIKHAILOV, I. D et al.Physica. B, Condensed matter. 2014, Vol 453, pp 59-62, issn 0921-4526, 4 p.Conference Paper

Acoustic phonon scattering on the two-dimensional electron gas in wurtzite AlxGa1―xN/GaN/AlyGa1―yN double heterostructures: The ternary mixed crystal effect and size effectYANG, F. J; BAN, S. L.Solid state communications. 2013, Vol 161, pp 5-8, issn 0038-1098, 4 p.Article

Acoustic-phonon-assisted quantum control of qubit states near the Si/SiO2 interfaceGOU, Bing-Ping; PEIJI ZHAO; KONG, Xiao-Jun et al.Physica. B, Condensed matter. 2013, Vol 427, pp 5-11, issn 0921-4526, 7 p.Article

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structuresARBIOL, Jordi; DE LA MATA, Maria; EICKHOFF, Martin et al.Materials today (Kidlington). 2013, Vol 16, Num 6, pp 213-219, issn 1369-7021, 7 p.Article

Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopyMOODY, G; SINGH, R; LI, H et al.Solid state communications. 2013, Vol 163, pp 65-69, issn 0038-1098, 5 p.Article

Dependence of spin―orbit parameters in AlGaN/GaN quantum wells on the ratio of height between the left and right barrierLI, M.Physica. B, Condensed matter. 2013, Vol 428, pp 14-17, issn 0921-4526, 4 p.Article

Electron-phonon coupling in quasi-free-standing graphene : CORRELATION AND MANY-BODY EFFECTS AT SURFACESJOHANNSEN, Jens Christian; ULSTRUP, Søren; HOFMANN, Philip et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 9, issn 0953-8984, 094001.1-094001.6Article

Enhancement of the spin conductance of a spin filterKIM, J; KIM, H; KIM, N et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025014.1-025014.4Article

First-principles prediction of a new Dirac-fermion material: silicon germanide monolayerHONGCAI ZHOU; MINGWEN ZHAO; XIAOMING ZHANG et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 39, issn 0953-8984, 395501.1-395501.6Article

Hole doping by adsorption of oxygen on a Stone―Thrower―Wales defect in grapheneHONG GUANG; AOKI, Masato; TANAKA, Shingo et al.Solid state communications. 2013, Vol 174, pp 10-15, issn 0038-1098, 6 p.Article

Influence of position dependent effective mass on donor binding energy in square and V-shaped quantum wells in the presence of a magnetic fieldPANAHI, H; GOLSHAHI, S; DOOSTDAR, M et al.Physica. B, Condensed matter. 2013, Vol 418, pp 47-51, issn 0921-4526, 5 p.Article

Magnetic field-dependent of binding energy in GaN/InGaN/GaN spherical QDQW nanoparticlesEL GHAZI, Haddou; JORIO, Anouar; ZORKANI, Izeddine et al.Physica. B, Condensed matter. 2013, Vol 427, pp 106-109, issn 0921-4526, 4 p.Article

Band Gap Engineering of BN Sheets by Interlayer Dihydrogen Bonding and Electric Field ControlQING TANG; ZHEN ZHOU; PANWEN SHEN et al.ChemPhysChem (Print). 2013, Vol 14, Num 9, pp 1787-1792, issn 1439-4235, 6 p.Article

Multipole-based modal analysis of gate-defined quantum dots in grapheneRAEIS-ZADEH, S. Mohsen; SAFAVI-NAEINI, Safieddin.The European physical journal. B, Condensed matter physics (Print). 2013, Vol 86, Num 6, issn 1434-6028, 86295.1-86295.7Article

Quantum ring on sphere: Electron states on spherical segmentKAZARYAN, Eduard M; SHAHNAZARYAN, Vanik A; SARKISYAN, Hayk A et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 52, pp 122-126, issn 1386-9477, 5 p.Article

Structural, Electronic, and Magnetic Properties of the Semifluorinated Boron Nitride Bilayer: A First-Principles StudyYANLI WANG; YI DING.Journal of physical chemistry. C. 2013, Vol 117, Num 6, pp 3114-3121, issn 1932-7447, 8 p.Article

Synthesis and electronic properties of chemically functionalized graphene on metal surfacesGRIINEIS, Alexander.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 4, issn 0953-8984, 043001.1-043001.14Article

Band parameters of InGaAs/GaAs quantum dots: electronic properties studyYAHYAOUI, M; SELLAMI, K; BOUJDARIA, K et al.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 125018.1-125018.7Article

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