kw.\*:("Electronic avalanche")
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Model of the avalanche multiplication in MIS structuresBOGDANOV, S. V; KRAVCHENKO, A. B; PLOTNIKOV, A. F et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 361-367, issn 0031-8965Article
Electron avalanches influenced by detachment and conversion processesWEN, C; WETZER, J. M.IEEE transactions on electrical insulation. 1988, Vol 23, Num 6, pp 999-1008, issn 0018-9367Article
Laser initiated electron avalanches observed in a laser microprobe mass spectrometerHUTT, K. W; WALLACH, E. R.Journal of applied physics. 1989, Vol 66, Num 5, pp 2223-2225, issn 0021-8979Article
PARTICULARITES DE LA MULTIPLICATION PAR AVALANCHE DU COURANT DANS LES STRUCTURES TRANSISTORS AU GERMANIUMGAVRILOV LE.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 1; PP. 177-187; BIBL. 18 REF.Article
INVESTIGATION ON THE PULSE-HEIGHT DISTRIBUTION OF ELECTRON AVALANCHES GENERATED BY THERMIONICALLY EMITTED ELECTRONS IN A PROPORTIONAL COUNTERCHATTERJEE SD; SASTRI RC; DHARA M et al.1978; INDIAN J. PHYS., A; IND; DA. 1978; VOL. 52; NO 2; PP. 100-113; BIBL. 21 REF.Article
Le problème du mécanisme de claquage d'une diode Zener à isolation magnétiqueVINTIZENKO, I. I; SULAKSHIN, A. S; TSVETKOV, V. I et al.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 8, pp 1584-1586, issn 0044-4642Article
Internal and external laser-induced avalanche breakdown of single droplets in an argon atmosphereHSIEH, W. F; EICKMANS, J. H; CHANG, R. K et al.Journal of the Optical Society of America. B, Optical physics (Print). 1987, Vol 4, Num 11, pp 1816-1820, issn 0740-3224Article
Formation mechanism of the so-called corona figureOKUYAMA, F; FUJIMITO, Y.IEEE transactions on plasma science. 1985, Vol 13, Num 1, pp 10-15, issn 0093-3813Article
Equation stochastique intégrale de l'avalanche et son utilisation pour l'analyse des bruits des diodes IMPATT avec une large couche d'avalancheOVCHINNIKOV, K. D.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1985, Vol 28, Num 11, pp 1462-1469, issn 0021-3462Article
Semiempirical determination of avalanche breakdown temperature parameters in p-n junctionsTJAPKIN, D; RAMOVIC, R; STOJANOVIC, D et al.Solid-state electronics. 1984, Vol 27, Num 5, pp 407-411, issn 0038-1101Article
Effect of avalanche-induced light emission on the multiplication factor in bipolar junction transistorsSHENG-LYANG JANG.Solid-state electronics. 1991, Vol 34, Num 11, pp 1191-1196, issn 0038-1101Article
A physical phenomenon to implement a random (noninstantaneous) multiplication photodetectorJINDAL, R. P.IEEE electron device letters. 1989, Vol 10, Num 2, pp 49-51, issn 0741-3106Article
A non-Markovian model of avalanche gain statistics for a solid-state photomultiplierLAVIOLETTE, R. A; STAPELBROEK, M. G.Journal of applied physics. 1989, Vol 65, Num 2, pp 830-836, issn 0021-8979Article
Water vapor-enhanced electron-avalanche growth in SF6 for nonuniform fieldsVAN BRUNT, R. J.Journal of applied physics. 1986, Vol 59, Num 7, pp 2314-2323, issn 0021-8979Article
Picosecond damage studies at 0.5 and 1 μmSOILEAU, M. J; WILLIAMS, W. E; VANSTRYLAND, E. W et al.Optical engineering (Bellingham. Print). 1983, Vol 22, Num 4, pp 424-430, issn 0091-3286Article
Approaching fundamental limits on signal detectionJINDAL, R. P.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 11, pp 2133-2138, issn 0018-9383Article
A photoelectronic source for electron avalanche measurementsMAHAJAN, S. M; SUDARSHAN, T. S.Review of scientific instruments. 1991, Vol 62, Num 10, pp 2495-2496, issn 0034-6748Article
Temperature and impact ionization effects on fT of advanced bipolar transistorsYUAN, J. S; YEH, C. S; GADEPALLY, B et al.Journal of applied physics. 1991, Vol 70, Num 4, pp 2402-2407, issn 0021-8979Article
Théorie non linéaire des diodes IMPATT avec une large couche de multiplicationOVCHINNIKOV, K. D.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1985, Vol 28, Num 10, pp 1331-1340, issn 0021-3462Article
General model of streamer propagationFERNSLER, R. F.The Physics of fluids. 1984, Vol 27, Num 4, pp 1005-1012, issn 0031-9171Article
Theory of electron multiplication in gases in strong weakly nonuniform electric fieldsFRIEDLAND, L; KAGAN, YU. M.Journal of applied physics. 1984, Vol 56, Num 3, pp 742-745, issn 0021-8979Article
CRITICAL DAMPING CONDITION IN IMPATT DIODESSAXENA P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. K207-K210; BIBL. 6 REF.Article
MODELE MATHEMATIQUE D'UN TRANSISTOR BIPOLAIRE POUR DES REGIMES DE FONCTIONNEMENT ORDINAIRE ET EN AVALANCHEDYAKONOV VP; SAMOJLOVA TA.1979; RADIOTEKHNIKA; SUN; DA. 1979; VOL. 34; NO 10; PP. 13-18; BIBL. 10 REF.Article
TOWNSEND COEFFICIENTS OF GASES IN AVALANCHE COUNTERSBRUNNER G.1978; NUCL. INSTRUM. METHODS; NLD; DA. 1978; VOL. 154; NO 1; PP. 159-163; BIBL. 8 REF.Article
PRELIMINARY TESTS OF A NEW SHOWER DETECTORDRUKIER AK.1980; NUCL. INSTRUM. METHODS; NLD; DA. 1980; VOL. 173; NO 2; PP. 259-260; BIBL. 3 REF.Article