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Results 1 to 25 of 10567

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Organic homojunction diodes with a high built-in potential: Interpretation of the current-voltage characteristics by a generalized einstein relationHARADA, K; WERNER, A. G; PFEIFFER, M et al.Physical review letters. 2005, Vol 94, Num 3, pp 036601.1-036601.4, issn 0031-9007Article

Structural characterization and effects of annealing on the electrical properties of stacked SiOxNy/Ta2O5 ultrathin films on strained-Si0.82Ge0.18 substratesCHATTERJEE, S; SAMANTA, S. K; MAITI, C. K et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 7, pp 901-907, issn 0022-3727, 7 p.Article

Disorder-dependence of the critical density in two-dimensional systems: An empirical relationSARACHIK, M. P.Europhysics letters (Print). 2002, Vol 57, Num 4, pp 546-549, issn 0295-5075Article

Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealingLATT, Khin Maung; LEE, Y. K; OSIPOWICZ, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 94, Num 1, pp 111-120, issn 0921-5107Article

Spin injection into semiconductors using dilute magnetic semiconductorsGOULD, C; SCHMIDT, G; RICHTER, G et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 395-402, issn 0169-4332Conference Paper

The effects of interface and bulk defects on the electrical performance of amorphous carbon/silicon heterojunctionsKONOFAOS, N; EVANGELOU, E. K; HASTAS, N. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 379-383, issn 0921-5107Conference Paper

Influence of surface reactions and ionization gradients on junction properties of F16PcZnHILLER, S; SCHLETTWEIN, D; ARMSTRONG, N. R et al.Journal of material chemistry. 1998, Vol 8, Num 4, pp 945-954, issn 0959-9428Article

Acoustoconductivity of quantum wiresBLENCOWE, M; SHIK, A.Superlattices and microstructures. 1997, Vol 22, Num 2, pp 209-212, issn 0749-6036Article

Scattering of excitons by free carriers in narrow and wide quantum wells in the presence of a transverse electric fieldTONG SAN KOH; YUAN PING FENG; SPECTOR, H. N et al.Solid state communications. 1997, Vol 104, Num 7, pp 407-412, issn 0038-1098Article

The role of electron phase coherence in quantum transport through open ballistic cavitiesBIRD, J. P; MICOLICH, A. P; AOYAGI, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3968-3970, issn 0021-4922, 1Conference Paper

Effect of ionization of impurity centres by electric field on the conductivity of superlatticeMENSAH, S. Y; ALLOTEY, F. K. A; CLEMENT, A et al.Superlattices and microstructures. 1996, Vol 19, Num 2, pp 151-158, issn 0749-6036Article

Quantum transport in a two-dimensional modulated channelSINGHA DEO, P; JAYANNAVAR, A. M.Physica. B, Condensed matter. 1996, Vol 228, Num 3-4, pp 353-362, issn 0921-4526Article

Electrical characteristics of the junction between the poly(dithienothiophene-dithienopyrrole) conducting copolymer and siliconCAMPOS, M; CASALBORE-MICELI, G; CAMAIONI, N et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 10, pp 2123-2127, issn 0022-3727Article

Zero-current voltage fluctuations in quantum dots at high magnetic fieldsBIRD, J; ISHIBASHI, K; AOYAGI, Y et al.Journal of the Physical Society of Japan. 1995, Vol 64, Num 10, pp 3618-3621, issn 0031-9015Article

The effect of electron confinement on the transient velocity response in a superlattice minibandLEI, X. L.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 20, pp 3749-3857, issn 0953-8984Article

Transmission resonance pattern in finitely periodic simple impurity doped superlattice structuresKALOTAS, T. M; LEE, A. R; COMMON, A. K et al.Physica status solidi. B. Basic research. 1994, Vol 184, Num 1, pp 137-145, issn 0370-1972Article

Modélisation Mathématique et Simulation Numérique de Problèmes Inhomogènes en Physique des Semiconducteurs = Mathematical Modelling and Numerical Simulation of Inhomogeneous Problems in Semiconductor PhysicsYamnahakki, Ahmed; Poupaud, F.1994, 144 p.Thesis

Quantum transport and quantum chaos in antidot superlattices in a magnetic fieldSILBERBAUER, H; ROTTER, P; SUHRKE, M et al.Semiconductor science and technology. 1994, Vol 9, Num 11S, pp 1906-1911, issn 0268-1242Conference Paper

Capacitance, admittance, and rectification properties of small conductorsBÜTTIKER, M.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 50, pp 9361-9378, issn 0953-8984Article

Wigner transport equation for strained heterostructuresBYOUNGHO LEE.Superlattices and microstructures. 1993, Vol 14, Num 4, pp 291-293, issn 0749-6036Article

Time-dependent characteristics of titanium-silicide contacts to 6H-silicon carbideCAPANO, M. A; PATTERSON, J. K; PETRY, L et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 458-463, issn 0361-5235, 6 p.Article

Charge injection in molecular wires grafted on metallic surfaces: electron-lattice interactionNESS, H; FISHER, A. J.The European physical journal. D, Atomic, molecular and optical physics (Print). 2003, Vol 24, Num 1-3, pp 409-412, issn 1434-6060, 4 p.Conference Paper

Electrochemical properties of atomic-scale metal wiresBINGQIAN XU; HUIXIN HE; BOUSSAAD, Salah et al.Electrochimica acta. 2003, Vol 48, Num 20-22, pp 3085-3091, issn 0013-4686, 7 p.Conference Paper

Electrical characterization of interfaces in unitype directly bonded silicon wafersFEDOTOV, A; SAAD, Anis M. H; ENISHERLOVA, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 384-388, issn 0921-5107Conference Paper

Strong wavevector dependence of hole transport in heterostructuresKLIMECK, Gerhard; BOWEN, R. Chris; BOYKIN, Timothy B et al.Superlattices and microstructures. 2001, Vol 29, Num 3, pp 187-216, issn 0749-6036Article

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