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Results 1 to 25 of 7907

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Delocalization of protons in liquid waterBAKKER, H. J; NIENHUYS, H.-K.Science (Washington, D.C.). 2002, Vol 297, Num 5581, pp 587-590, issn 0036-8075Article

Kondo effect in an integer-spin quantum dotSASAKI, S; DE FRANCESCHI, S; ELZERMAN, J. M et al.Nature (London). 2000, Vol 405, Num 6788, pp 764-767, issn 0028-0836Article

High-field transport in amorphous carbon and carbon nitride filmsKUMAR, Sushil; GODET, C; GOUDOVSKIKH, A et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 349-352, issn 0022-3093, 4 p.Conference Paper

Investigations of local currents in a semiconductor by single-molecule spectroscopyCARUGE, Jean-Michel; ORRIT, Michel.Journal of luminescence. 2002, Vol 98, Num 1-4, pp 1-5, issn 0022-2313Conference Paper

Modelling and experimental evidence of quantum phenomena in metallic non-continuous films (metal quantum wire network - MQWN -)PIRA, N. Li; MONFERINO, R; PERLO, P et al.euspen : european society for precision engineering and nanotechnology. International conference. 2001, pp 212-215, 2VolConference Paper

The screening of a potential of charged centers by quasi-two-dimensional electrons in transverse electric fieldAGHABABYAN, G. S; AROUTIOUNIAN, V. M; MIKAELYAN, L. V et al.Applied surface science. 2000, Vol 162-63, pp 346-353, issn 0169-4332Conference Paper

Degradation of organic electroluminescent devices. evidence for the occurrence of spherulitic crystallization in the hole transport layerSMITH, P. F; GERROIR, P; XIE, S et al.Langmuir. 1998, Vol 14, Num 20, pp 5946-5950, issn 0743-7463Article

Anomalous magnetoresistance of (Zn1-xMnx)3As2 in the region of hopping conductivityLAIHO, R; LISUNOV, K. G; STAMOV, V. N et al.Solid state communications. 1995, Vol 93, Num 2, pp 151-154, issn 0038-1098Article

A chain of random resistors : the resistance distributionLAIKHTMAN, B. D.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 33, pp 7409-7420, issn 0953-8984Article

Fe-doped sodium aluminosilicate thin films : conductivity, microstructural organization and sensor propertiesBYCHKOV, E; BRUNS, M; GECKLE, U et al.Solid state ionics. 1994, Vol 74, Num 3-4, pp 165-178, issn 0167-2738Article

Optical tunneling effect of surface plasmon polaritons: A simulation study using particles methodLAN, Y.-C.Journal of electromagnetic waves and applications. 2005, Vol 19, Num 14, pp 1873-1880, issn 0920-5071, 8 p.Article

Joule heat in a two-dimensional electron gas exposed to a normal non-homogeneous magnetic field of a 'chess' configurationBADALYAN, S. M; PEETERS, F. M.Physica. B, Condensed matter. 2002, Vol 316-17, pp 216-218, issn 0921-4526Conference Paper

The power effect in write-in process of Ag-TCNQ electric recording thin filmXINGGONG WAN; JIN LI; DIANYONG CHEN et al.Physica status solidi. A. Applied research. 2000, Vol 181, Num 2, pp R13-R15, issn 0031-8965Article

Analysis of the temperature dependence of electron mobility in CdGeAs2 single crystalsBORISENKO, S. I; RUD', V. Yu; RUD', Yu V et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1128-1132, issn 0268-1242Article

Experimental set-up for thermopower and resistivity measurements at 100-1300 KBURKOV, A. T; HEINRICH, A; KONSTANTINOV, P. P et al.Measurement science & technology (Print). 2001, Vol 12, Num 3, pp 264-272, issn 0957-0233Article

Mechanical lamb-shift analogue for the Cooper-pair boxARMOUR, A. D; BLENCOWE, M. P; SCHWAB, K. C et al.Physica. B, Condensed matter. 2002, Vol 316-17, pp 406-407, issn 0921-4526Conference Paper

Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductorsDMITRIEV, A. P; KACHOROVSKII, V. Yu; SHUR, M. S et al.Solid state communications. 2000, Vol 113, Num 10, pp 565-568, issn 0038-1098Article

Probing planar arrays of magnetic nano-particles by the extraordinary Hall effectGERBER, A; MILNER, A; TUAILLON-COMBES, J et al.Journal of magnetism and magnetic materials. 2002, Vol 241, Num 2-3, pp 340-344, issn 0304-8853Article

Defect generation in Si/SiO2/ZrO2/TiN structures: the possible role of hydrogenHOUSSA, M; AFANAS'EV, V. V; STESMANS, A et al.Semiconductor science and technology. 2001, Vol 16, Num 12, pp L93-L96, issn 0268-1242Article

Disorder and variable-range hopping conductivity in Cu2ZnSnS4 thin films prepared by flash evaporation and post-thermal treatmentGUC, M; CABALLERO, R; LISUNOV, K. G et al.Journal of alloys and compounds. 2014, Vol 596, pp 140-144, issn 0925-8388, 5 p.Article

Tunneling of Bloch electrons through a small-size contactKHOTKEVYCH-SANINA, N. V; KOLESNICHENKO, Yu. A.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 59, pp 133-138, issn 1386-9477, 6 p.Article

Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxyXIAOLU GUO; WENQUAN MA; JIANLIANG HUANG et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045004.1-045004.5Article

Transparent conductive Ga-doped MgZnO/Ag/Ga-doped MgZnO sandwich structure with improved conductivity and transmittanceLIU, Wei-Sheng; LIU, Yueh-Hung; CHEN, Wei-Ku et al.Journal of alloys and compounds. 2013, Vol 564, pp 105-113, issn 0925-8388, 9 p.Article

Energy Level Shifts in Spiro-OMeTAD Molecular Thin Films When Adding Li-TFSISCHÖLIN, Rebecka; KARLSSON, Martin H; ERIKSSON, Susanna K et al.Journal of physical chemistry. C. 2012, Vol 116, Num 50, pp 26300-26305, issn 1932-7447, 6 p.Article

High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniquesDARWICH, R; ROCA I CABARROCAS, P.Thin solid films. 2011, Vol 519, Num 16, pp 5364-5370, issn 0040-6090, 7 p.Article

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