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A single-molecule diode with significant rectification and negative differential resistance behaviorBIN CUI; YUQING XU; GUOMIN JI et al.Organic electronics (Print). 2014, Vol 15, Num 2, pp 484-490, issn 1566-1199, 7 p.Article

Solution-processable ambipolar organic field-effect transistor based on Co-planar bisphthalocyaninato copperYAN SHI; XIYOU LI.Organic electronics (Print). 2014, Vol 15, Num 1, pp 286-293, issn 1566-1199, 8 p.Article

Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFETYANG, Chia-Ming; WANG, Jer-Chyi; CHIANG, Tzu-Wen et al.International journal of nanotechnology. 2014, Vol 11, Num 1-4, pp 15-26, issn 1475-7435, 12 p.Conference Paper

Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETsCONG LI; YIQI ZHUANG; SHAOYAN DI et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3655-3662, issn 0018-9383, 8 p.Article

Toward high-mobility organic field-effect transistors: Control of molecular packing and large-area fabrication of single-crystal-based devices : ORGANIC SINGE CRYSTALSHANYING LI; GIRI, Gaurav; TOK, Jeffrey B.-H et al.MRS bulletin. 2013, Vol 38, Num 1, pp 34-42, issn 0883-7694, 9 p.Article

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETsYAODONG HU; SHENGWEI LI; GUANGFAN JIAO et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 5, pp 806-809, issn 1536-125X, 4 p.Article

RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation studyAMOROSO, Salvatore Maria; GERRER, Louis; MARKOV, Stanislav et al.Solid-state electronics. 2013, Vol 84, pp 120-126, issn 0038-1101, 7 p.Conference Paper

Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric StacksCHAVES, Ferney A; JIMENEZ, David; RUIZ, Francisco J. García et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2589-2596, issn 0018-9383, 8 p.Article

Correlation between the stability and trap parameters of amorphous oxide thin film transistorsCHONG, Eugene; PARK, Ki-Ho; EUN AH CHO et al.Microelectronic engineering. 2012, Vol 91, pp 50-53, issn 0167-9317, 4 p.Article

Nanoscale RingFETsWILLIAMS, Nicholas; SILVA, Helena; GOKIRMAK, Ali et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1339-1341, issn 0741-3106, 3 p.Article

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationsSULTAN, S. M; CLARK, O. D; MASAUD, T. B et al.Microelectronic engineering. 2012, Vol 97, pp 162-165, issn 0167-9317, 4 p.Article

Semiclassical Monte Carlo Analysis of Graphene FETsDAVID, J. K; REGISTER, L. F; BANERJEE, S. K et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 976-982, issn 0018-9383, 7 p.Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 sourceZHAO, Q. T; YU, W. J; MANTL, S et al.Solid-state electronics. 2012, Vol 74, pp 97-101, issn 0038-1101, 5 p.Article

Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETsGERRER, L; MARKOV, S; AMOROSO, S. M et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 1918-1923, issn 0026-2714, 6 p.Conference Paper

Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel laverJUANG, M.-H; PENG, Y.-S; SHYE, D.-C et al.Microelectronic engineering. 2011, Vol 88, Num 1, pp 32-35, issn 0167-9317, 4 p.Article

Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structureRANA, Ashwani K; CHAND, Narottam; KAPOOR, Vinod et al.Journal of computational electronics (Print). 2011, Vol 10, Num 1-2, pp 222-228, issn 1569-8025, 7 p.Article

Remotely screened electron-impurity scattering model for nanoscale MOSFETsTOWIE, Ewan A; WATLING, Jeremy R; BARKER, John R et al.Semiconductor science and technology. 2011, Vol 26, Num 5, issn 0268-1242, 055008.1-055008.8Article

Generation of pure spin currents in a single electron transistor with a superconducting islandCOSTACHE, Marius V; VALENZUELA, Sergio O.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8100, issn 0277-786X, isbn 978-0-8194-8710-0, 81000I.1-81000I.11Conference Paper

Colloidal ZnO quantum dot-based, solution-processed transparent field-effect transistorsAHN, Joo-Seob; LEE, Jong-Jin; GUN WOO HYUNG et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 27, issn 0022-3727, 275102.1-275102.6Article

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High MOSFETsLEE, Ju-Wan; BYOUNG HUN LEE; SHIN, Hyungcheol et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 4, pp 913-918, issn 0018-9383, 6 p.Article

Organic thin-film transistor properties and the structural relationships between various aromatic end-capped triisopropylsilylethynyl anthracene derivativesPARK, Jong-Hwa; DONG HOON LEE; KONG, Hoyoul et al.Organic electronics (Print). 2010, Vol 11, Num 5, pp 820-830, issn 1566-1199, 11 p.Article

Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresisVASU, K. S; CHAKRABORTY, Biswanath; SAMPATH, S et al.Solid state communications. 2010, Vol 150, Num 29-30, pp 1295-1298, issn 0038-1098, 4 p.Article

Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substratesJOSHI, P; ROMERO, H. E; NEAL, A. T et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 33, issn 0953-8984, 334214.1-334214.6Article

Compact modeling of optically gated carbon nanotube field effect transistorLIAO, Si-Yu; MANEUX, Cristell; POUGET, Vincent et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 8, pp 1858-1861, issn 0370-1972, 4 p.Conference Paper

Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrodeLIN, Yi-Sheng; CHOU, Wei-Yang; CHEN, Lin-Ni et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7778, issn 0277-786X, isbn 978-0-8194-8274-7, 77781E.1-77781E.7Conference Paper

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