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Numerical investigation on the junctionless nanowire FETGNANI, E; GNUDI, A; REGGIANI, S et al.Solid-state electronics. 2012, Vol 71, pp 13-18, issn 0038-1101, 6 p.Conference Paper

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TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling modelBISWAS, Arnab; SHANKAR DAN, Surya; LE ROYER, Cyrille et al.Microelectronic engineering. 2012, Vol 98, pp 334-337, issn 0167-9317, 4 p.Conference Paper

A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO₂ LayerPARK, Sooyoung; BAEK, Chang-Ki; PARK, Hong-Hyun et al.IEEE transactions on nanotechnology. 2011, Vol 10, Num 4, pp 699-705, issn 1536-125X, 7 p.Article

Effects of three-dimensional electric-field coupling on a side-gated nanotransistorXU, K. Y; XIONG, J. W; SONG, A. M et al.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 059026.1-095026.9Article

Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETsLIU, Keng-Ming; REGISTER, Leonard F; BANERJEE, Sanjay K et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 4-10, issn 0018-9383, 7 p.Article

High performance thin-film transistors using moderately aligned semiconducting single-wall carbon nanotubesFUJII, Shunjiro; TANAKA, Takeshi; NISHIYAMA, Satoko et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 11, pp 2692-2696, issn 0370-1972, 5 p.Article

Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effectsGHOGGALI, Z; DJEFFAL, F.International journal of electronics. 2010, Vol 97, Num 1-2, pp 119-127, issn 0020-7217, 9 p.Article

Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistorsMAO, Ling-Feng.Applied physics. A, Materials science & processing (Print). 2010, Vol 98, Num 3, pp 565-569, issn 0947-8396, 5 p.Article

Functionalized dithieno[2,3-b:3',2'-d]thiophenes (DTTs) for organic thin-film transistorsKIM, Choongik; CHEN, Ming-Chou; LEE, Gene-Hsiang et al.Organic electronics (Print). 2010, Vol 11, Num 5, pp 801-813, issn 1566-1199, 13 p.Article

Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect TransistorsYOUSEFI, Reza; SAGHAFI, Kamyar; MOHAMMAD KAZEM MORAVVEJ-FARSHI et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 4, pp 765-771, issn 0018-9383, 7 p.Article

Organic field effect transistors based on 5,10,15,20-tetrakis(4-pentyloxyphenyl)porphyrin single crystalPAN MA; YANLI CHEN; XUE CAI et al.Synthetic metals. 2010, Vol 160, Num 5-6, pp 510-515, issn 0379-6779, 6 p.Article

Control of charge mobility in single-crystal rubrene through surface chemistryZHANG, Keke K; KEJIE TAN; CHANGJI ZOU et al.Organic electronics (Print). 2010, Vol 11, Num 12, pp 1928-1934, issn 1566-1199, 7 p.Article

Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device applicationHONG, Woong-Ki; JO, Gunho; CHOE, Minhyock et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7768, issn 0277-786X, isbn 9780819482648, 77680J.1-77680J.14Conference Paper

Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET ApplicationsSON, Younghwan; BAEK, Chang-Ki; HAN, In-Shik et al.IEEE transactions on nanotechnology. 2009, Vol 8, Num 5, pp 654-658, issn 1536-125X, 5 p.Article

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Microstructure transformations induced by modified-layers on pentacene polymorphic films and their effect on performance of organic thin-film transistorYUAN, Guang-Cai; ZHISONG LU; CHANG MING LI et al.Organic electronics (Print). 2009, Vol 10, Num 7, pp 1388-1395, issn 1566-1199, 8 p.Article