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Results 1 to 25 of 732237

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Length-constrained escape routing of differential pairsYAN, Jin-Tai.Integration (Amsterdam). 2015, Vol 48, pp 158-169, issn 0167-9260, 12 p.Article

Stochastic logical effort as a variation aware delay model to estimate timing yieldBAYRAKCI, Alp Arslan.Integration (Amsterdam). 2015, Vol 48, pp 101-108, issn 0167-9260, 8 p.Article

0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb BaseHUIMING XU; WU, Barry; IVERSON, Eric W et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 24-26, issn 0741-3106, 3 p.Article

2-Bit, 1―4 GHz Reconfigurable Frequency Measurement DeviceESPINOSA-ESPINOSA, Moises; DE OLIVEIRA, Bruno G. M; LLAMAS-GARRO, Ignacio et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 8, pp 569-571, issn 1531-1309, 3 p.Article

3D finite element modeling of 3D C2W (chip to wafer) drop test reliability: Optimization of internal architecture and materialsBELHENINI, Soufyane; TOUGUI, Abdellah; BOUCHOU, Abdelhake et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 13-21, issn 0026-2714, 9 p.Article

600 V Diamond Junction Field-Effect Transistors Operated at 200 °CIWASAKI, Takayuki; YAITA, Junya; KATO, Hiromitsu et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 241-243, issn 0741-3106, 3 p.Article

A 2.14-GHz GaN MMIC Doherty Power Amplifier for Small-Cell Base StationsCHEOL HO KIM; SEUNGHOON JEE; JO, Gweon-Do et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 4, pp 263-265, issn 1531-1309, 3 p.Article

A 2―D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channelMIN WANG; KE, Dao-Ming; XU, Chun-Xia et al.Solid-state electronics. 2014, Vol 92, pp 35-39, issn 0038-1101, 5 p.Article

A Comparison of Two Excitation Modes for MEMS Electrothermal Displacement SensorsMOHAMMADI, Ali; REZA MOHEIMANI, S. O; RASIT YUCE, Mehmet et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 584-586, issn 0741-3106, 3 p.Article

A Doherty Power Amplifier With a GaN MMIC for Femtocell Base StationsJAEHUN LEE; LEE, Dong-Ho; SONGCHEOL HONG et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 3, pp 194-196, issn 1531-1309, 3 p.Article

A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAMBERDAN, Radu; CHUAN LIM; KHIAT, Ali et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 135-137, issn 0741-3106, 3 p.Article

A Miniaturized Marchand Balun in CMOS With Improved Balance for Millimeter-Wave ApplicationsLEIJUN XU; SJÖLAND, Henrik; TÖRMÄNEN, Markus et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 1, pp 53-55, issn 1531-1309, 3 p.Article

A Nonlinear Filter-Based Volterra Model With Low Complexity for Wideband Power AmplifiersJIANFENG ZHAI; LEI ZHANG; JIANYI ZHOU et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 3, pp 203-205, issn 1531-1309, 3 p.Article

A Novel Compact Butler Matrix Without Phase ShifterGE TIAN; YANG, Jin-Ping; WEN WU et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 5, pp 306-308, issn 1531-1309, 3 p.Article

A Novel Direct Injection-Locked QPSK Modulator Based on Ring VCO in 180 nm CMOSSANG YEOP LEE; ITO, Hiroyuki; ISHIHARA, Noboru et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 4, pp 269-271, issn 1531-1309, 3 p.Article

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array SimulationHAITONG LI; PENG HUANG; BIN GAO et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 211-213, issn 0741-3106, 3 p.Article

A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver ApplicationsLULU PENG; RONGXIANG WU; XIANGMING FANG et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 108-110, issn 0741-3106, 3 p.Article

A Simple Method to Grow Thermal SiO2 Interlayer for High-Performance SPC Poly-Si TFTs Using Al2O3 Gate DielectricMENG ZHANG; WEI ZHOU; RONGSHENG CHEN et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 548-550, issn 0741-3106, 3 p.Article

A W-Band Harmonically Enhanced CMOS: Divide-by-Three Frequency DividerCHEN, Yang-Wen; LUO, Tang-Nian; CRUZ, Hugo et al.IEEE microwave and wireless components letters. 2014, Vol 24, Num 4, pp 257-259, issn 1531-1309, 3 p.Article

A compact model for NBTI degradation and recovery under use-profile variations and its application to aging analysis of digital integrated circuits : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMSKLEEBERGER, Veit B; BARKE, Martin; WERNER, Christoph et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1083-1089, issn 0026-2714, 7 p.Article

A digital array based bit serial processor for arbitrary window size kernel convolution in vision sensorsHABIBI, Mehdi; BAFANDEH, Alireza; MUHAMMAD ALI MONTAZEROLGHAEM et al.Integration (Amsterdam). 2014, Vol 47, Num 4, pp 417-430, issn 0167-9260, 14 p.Article

A fast path-based method for 3-D resist development simulationDAI, Q; GUO, R; LEE, S.-Y et al.Microelectronic engineering. 2014, Vol 127, pp 86-96, issn 0167-9317, 11 p.Article

A reversible first-order dispersive model of parametric instabilityALAGI, Filippo; ROSSETTI, Mattia; STELLA, Roberto et al.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 561-569, issn 0026-2714, 9 p.Article

A study of ageing effect at elevated temperature of flexible silicon diodes integrated using conductive adhesivesHEATH, Cory D; CHAU DINH; DORAN, C et al.Microelectronics and reliability. 2014, Vol 54, Num 5, pp 956-959, issn 0026-2714, 4 p.Article

A study of the interface-trap activation kinetics in the Negative Bias Temperature InstabilityALAGI, Filippo.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 22-29, issn 0026-2714, 8 p.Article

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