First principles modelling of the deposition process for high-K dielectric filmsELLIOTT, Simon D.Proceedings - Electrochemical Society. 2003, pp 231-242, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Roozeboom, F; Gusev, E.P; Chen, L.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-396-2, XIV, 480 p, isbn 1-56677-396-2Conference Proceedings

New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fillREGNIER, C; WACQUANT, F; LEVERD, F et al.Proceedings - Electrochemical Society. 2003, pp 391-396, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Application of high-K dielectrics in CMOS technology and emerging new technologyLIU, Rich; WU, Tai-Bor.Proceedings - Electrochemical Society. 2003, pp 207-216, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Effect of starting surface in atomic layer depositionHAUKKA, Suvi; TUOMINEN, Marko; VAINONEN-AHLGREN, Elizaveta et al.Proceedings - Electrochemical Society. 2003, pp 405-416, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Batch atomic layer deposition for MIM capacitorsDE BLANK, René; JAN SNIJDERS, Gert; BEULENS, Sjaak et al.Proceedings - Electrochemical Society. 2003, pp 225-229, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formationLERCH, W; PAUL, S; DOWNEY, D. F et al.Proceedings - Electrochemical Society. 2003, pp 43-49, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Silicon damage and dopant behavior studies of rapidly thermally processed arsenic-implanted siliconGIRGINOUDI, D; GEORGOULAS, N; THANAILAKIS, A et al.Proceedings - Electrochemical Society. 2003, pp 397-402, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Ultra-shallow implant anneal using a short wavelength flash light sourceWOO SIK YOO; KITAEK KANG.Proceedings - Electrochemical Society. 2003, pp 111-116, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formationIWAMOTO, K; TOMINAGA, T; YASUDA, T et al.Proceedings - Electrochemical Society. 2003, pp 265-272, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Fabrication of SiGe-on-insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation techniqueTEZUKA, Tsutomu; SUGIYAMA, Naoharu; MIZUNO, Tomohisa et al.Proceedings - Electrochemical Society. 2003, pp 305-314, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Junction scaling for 90 NM and beyondHWANG, Jack; KENNEL, Hal; PACKAN, Paul et al.Proceedings - Electrochemical Society. 2003, pp 35-42, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Investigation of HFO₂ dielectrics for inter-poly dielectrics and metal-insulator-metal capacitorsPERNG, Tsu-Hsiu; CHIEN, Chao-Hsin; CHEN, Ching-Wei et al.Proceedings - Electrochemical Society. 2003, pp 465-469, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

Electrical characterization of thick localized SOI substrates manufactured by rapid thermal processing for high voltage integrated circuitsGONNARD, O; ROUX, S; BERNIZET, F et al.Proceedings - Electrochemical Society. 2003, pp 331-336, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

A novel hot-wall furnace-based RTP system with sequenced H₂and WET-H₂ for advanced dielectric applicationsYONG LIU; HEBB, Jeff.Proceedings - Electrochemical Society. 2003, pp 25-31, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Laser thermal processing for ultra-shallow junction formation: Experiment and modellingVENTURINI, J; HERNANDEZ, M; SARNET, T et al.Proceedings - Electrochemical Society. 2003, pp 131-136, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Atomic vapour deposition of complex high-K thin films for sub-90 NM CMOS devicesLINDNER, J; MIEDL, S; SCHUMACHER, M et al.Proceedings - Electrochemical Society. 2003, pp 459-464, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

The role of fluorine with GE pre-amorphization in forming PMOS junctions for the 65-NM CMOS technology nodePAWLAK, B. J; LINDSAY, R; SURDEANU, R et al.Proceedings - Electrochemical Society. 2003, pp 99-104, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Time-resolved analysis of flash-assist RTP thermal pulse progression in SOI and bulk silicon wafersELLION, Kiefer; MCCOY, S; CAMM, D. M et al.Proceedings - Electrochemical Society. 2003, pp 17-24, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Ultra-shallow junction formation: Current manufacturability issues and future prospectsHEBB, Jeffrey; AGARWAL, Aditya; GOSSMANN, Hans et al.Proceedings - Electrochemical Society. 2003, pp 83-92, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Cluster ion beam process technologyYAMADA, Isao; TOYODA, Noriaki; MATSUO, Jiro et al.Proceedings - Electrochemical Society. 2003, pp 51-60, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Dose loss and diffusion in BF₂ implanted silicon during rapid thermal annealingDOKUMACI, Omer; RONSHEIM, Paul; HEGDE, Suri et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Design of experiment on the CO salicide process: Impact of thickness and anneals on main CMOS parametersWACQUANT, F; REGNIER, C; BASSO, M.-T et al.Proceedings - Electrochemical Society. 2003, pp 191-196, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper