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Electroabsorption for deep level to band transitions accompanied by multiphonon processesSCHENK, A; ENDERLEIN, R; SUISKY, D et al.Physica status solidi. B. Basic research. 1985, Vol 131, Num 2, pp 729-739, issn 0370-1972Article

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Evidence for lattice-mismatch-induced defects in amorphous semiconductor heterojunctionsROXLO, C. B; ABELES, B; TIEDJE, T et al.Physical review letters. 1984, Vol 52, Num 22, pp 1994-1997, issn 0031-9007Article

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Electroabsorption by stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structuresCHEMLA, D. S; DAMEN, T. C; MILLER, D. A. B et al.Applied physics letters. 1983, Vol 42, Num 10, pp 864-866, issn 0003-6951Article

EXCITONS "ACCEPTEURS" ET "DONNEURS" LIES AUX IMPURETES METAUX DE TRANSITION DANS LES SEMICONDUCTEURS A₂B₆KIKOIN KA; SOKOLOV VI; FRELOV VN et al.1982; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 6; PP. 2335-2347; ABS. ENG; BIBL. 25 REF.Article

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ELECTROABSORPTION IN DISORDERED SOLIDS. II: ANTHRACENE CRYSTALS AND THIN FILMSROBERTS GG; KEATING BS; VINCETT PS et al.1978; J. PHYS. C.; GBR; DA. 1978; VOL. 11; NO 18; PP. 3847-3855; BIBL. 9 REF.Article

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