50 nm resolution, defect-free, electron-beam resists produced with monomer/polymer multilayer filmsFARISS, G; LANDO, J; RICKERT, S et al.Journal of materials science. 1983, Vol 18, Num 9, pp 2603-2612, issn 0022-2461Article

Improvement of mask-limited yield with a vote-taking lithographic schemeFU, C.-C; DAMERON, D. H.IEEE electron device letters. 1984, Vol 5, Num 10, pp 398-400, issn 0741-3106Article

Physico-chemical properties of amphoteric isoelectric, macroreticulate buffersCHIARI, M; PAGANI, L; RIGHETTI, P. G et al.Journal of biochemical and biophysical methods. 1991, Vol 23, Num 2, pp 115-130, issn 0165-022XArticle

Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

EXPERIMENTAL OBSERVATIONS OF NEARLY MONODISPERSIVE POLYSTYRENE AS NEGATIVE ELECTRON RESISTSLAI JH; SHEPHERD LT.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 696-698; BIBL. 5 REF.Article

Mounting assembly for preparation of electrodes from totally insoluble conducting polymersCZERWINSKI, A; SCHRADER, J. R; MARK, H. B. JR et al.Analytical chemistry (Washington, DC). 1984, Vol 56, Num 6, pp 1039-1041, issn 0003-2700Article

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 154-160; BIBL. 7 REF.Article

A HIGH RESOLUTION NEGATIVE ELECTRON RESIST BY IMAGE REVERSALOLDHAM WG; HIEKE E.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 217-219; BIBL. 3 REF.Article

Polymer materials for microlithography: electron beam resistsPETHRICK, R. A.Progress in rubber and plastics technology. 1987, Vol 3, Num 2, pp 11-22, issn 0266-7320Article

Recent resist developments in Japan. A reviewNONOGAKI, S.Polymer engineering and science. 1983, Vol 23, Num 18, pp 985-989, issn 0032-3888Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

IMPROVED DRY ETCHING RESISTANCE OF ELECTRON-BEAM RESIST BY ION EXPOSURE PROCESSMOCHIJI K; WADA Y; OBAYASHI H et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2556-2559; BIBL. 9 REF.Article

ELECTRON-BEAM LITHOGRAPHY OF CHLORINATED POLYSTYRENES WITH NARROW MOLECULAR WEIGHT DISTRIBUTIONSFEIT ED; STILLWAGON LE.1980; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1980; VOL. 20; NO 16; PP. 1058-1063; BIBL. 13 REF.Article

Etude de résines négatives sensibles aux électrons utilisées dans les procédés de microlithographie = Performance of electrosensitive negative resists in microlithographyHOLIL, B; SAGNES, R; SERRE, B et al.Revue de physique appliquée. 1985, Vol 20, Num 3, pp 143-149, issn 0035-1687Article

A new method for determining electron beam proximity correction parameters in a double layer siloxane-diazo resist systemJONES, F; PARASZCZAK, J; SPETH, A et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3092-3097, issn 0021-8979Article

A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON BEAM RESISTYAMADA M; HATTORI S; MORITA S et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2598-2602; BIBL. 22 REF.Article

PROXIMITY FUNCTION CALCULATION OF PATTERNS IN POSITIVE ELECTRON RESISTSBRANDT J; LAI JH; SHEPHERD LT et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 813-822; BIBL. 12 REF.Article

A DRY ETCHING TECHNIQUE USING ELECTRON BEAM RESIST-PBSYAMAZAKI T; WATAKABE Y; SUZUKI Y et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1859-1861; BIBL. 2 REF.Article

THERMALLY-REACTED POLY(METHACRYLAMIDE) AS A POSITIVE ELECTRON BEAM RESIST.MATSUDA S; TSUCHIYA S; HONMA M et al.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 410-413; BIBL. 9 REF.; (PHOTOPOLYM. CONF. 4; ELLENVILLE, N.Y.; 1976)Conference Paper

THREE DIMENSIONAL BEHAVIOR OF NEGATIVE ELECTRON RESISTS.HEIDENREICH RD; KAMMLOTT GW.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 377-380; BIBL. 5 REF.; (PHOTOPOLYM. CONF. 4; ELLENVILLE, N.Y.; 1976)Conference Paper

Superficial image emphasis lithographyMATSUDA, T; ISHII, T; HARADA, K et al.Applied physics letters. 1985, Vol 47, Num 2, pp 123-125, issn 0003-6951Article

On the crosslinking reaction in negative electron resists based on polystyrene and poly(α-methylstyrene)IMAMURA, S; TAMAMURA, T; KOGURE, O et al.Polymer journal. 1984, Vol 16, Num 5, pp 441-444, issn 0032-3896Article

Plasma processing of thin chromium films for photomasksCURTIS, B. J; BRUNNER, H. R; EBNOETHER, M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 11, pp 2242-2249, issn 0013-4651Article

ELECTRON-BEAM RESISTS FOR LIFT-OFF PROCESSING WITH POTENTIAL APPLICATION TO JOSEPHSON INTEGRATED CIRCUITSMAGERLEIN JH; WEBB DJ.1980; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1980; VOL. 24; NO 5; PP. 554-562; BIBL. 30 REF.Article

PGMA AS A HIGH RESOLUTION, HIGH SENSITIVITY NEGATIVE ELECTRON BEAM RESISTTANIGUCHI Y; HATANO Y; SHIRAISHI H et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 6; PP. 1143-1148; BIBL. 3 REF.Article