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'Semi-insulating' silicon using deep level impurity doping: problems and potentialMALLIK, Kanad; FALSTER, R. J; WILSHAW, P. R et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 517-524, issn 0268-1242, 8 p.Article

Electronic and structural properties of germanium self-interstitialsDIONIZIO MOREIRA, M; MIWA, R. H; VENEZUELA, P et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115215.1-115215.5, issn 1098-0121Article

Electronic structure of the phosphorus-vacancy complex in silicon: A resonant-bond modelGANCHENKOVA, M. G; KUZNETSOV, A. Yu; NIEMINEN, R. M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115204.1-115204.11, issn 1098-0121Article

Electronic structure of divacancy-hydrogen complexes in siliconCOUTINHO, J; TORRES, V. J. B; JONES, R et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 39, pp S2809-S2814, issn 0953-8984Conference Paper

Ab initio modelling of transition metals in diamondWATKINS, M; MAINWOOD, A.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 39, pp S2913-S2927, issn 0953-8984Conference Paper

Electronic properties of vacancy-oxygen complexes in SiGe alloysMARKEVICH, V. P; PEAKER, A. R; MURIN, L. I et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 790-794, issn 0921-4526, 5 p.Conference Paper

Study of the recombination properties of thermostable radiation defects in p-n structures manufactured in high resistivity neutron transmutation-doped siliconKORSHUNOV, F. P; ZHDANOVICH, N. E; MARCHENKO, I. G et al.Vacuum. 2003, Vol 70, Num 2-3, pp 193-196, issn 0042-207X, 4 p.Conference Paper

Effect of hydrostatic pressure on the energies of deep-level impurity centres in semiconductors : gold in germaniumDAUNOV, M. I; KAMILOV, I. K; GABIBOV, S. F et al.Semiconductor science and technology. 2001, Vol 16, Num 6, pp 511-513, issn 0268-1242Article

Energetics of NP and NB complexes in siliconZAVODINSKY, V. G; VISIKOVSKI, A. V; KUYANOV, I. A et al.Computational materials science. 2001, Vol 21, Num 4, pp 505-508, issn 0927-0256Conference Paper

Interstitial carbon reactions in n-Si induced by high-energy proton irradiationKONO, K; AMEKURA, H; KISHIMOTO, N et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 265-267, issn 0921-4526Conference Paper

Evolution of copper-hydrogen-related defects in siliconKNACK, S; WEBER, J; LEMKE, H et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 404-407, issn 0921-4526Conference Paper

Precipitation-enhanced diffusion of nickel in dislocation-free silicon studied by in-diffusion and annealing processesTANAKA, Shuji; KITAGAWA, Hajime; IKARI, Tetsuo et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 427-430, issn 0921-4526Conference Paper

Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline siliconKITAGAWA, I; MARUIZUMI, T.Physica. B, Condensed matter. 2001, Vol 308-10, pp 424-426, issn 0921-4526Conference Paper

Iridium-related Deep levels in n-type siliconBOLLMANN, J; KNACK, S; WEBER, J et al.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 251-260, issn 0370-1972Article

Oxygen-related deep levels in oxygen doped EFG poly-SiBORJANOVIC, V; KOVACEVIC, I; SANTIC, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 292-296, issn 0921-5107Conference Paper

DLTS analysis of nickel-hydrogen complex defects in siliconSHIRAISHI, M; SACHSE, J.-U; LEMKE, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 130-133, issn 0921-5107Article

Electric-field-enhanced emission and annealing behaviour of electron traps introduced in n-Si by low-energy He ion bombardmentDEENAPANRAY, P. N. K; MEYER, W. E; AURET, F. D et al.Semiconductor science and technology. 1999, Vol 14, Num 1, pp 41-47, issn 0268-1242Article

Hydrogen-rhodium complexes in siliconKNACK, S; WEBER, J; LEMKE, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 141-145, issn 0921-5107Article

Behaviour of oxygen in CZ-silicon during 430-630°C heat treatmentPRAKASH, O; UPRETI, N. K; SINGH, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 52, Num 2-3, pp 180-184, issn 0921-5107Article

Effect of Impurity core squeezing on donor energy levels in siliconSASIREKA, D; PALANIYANDI, E; IYAKUTTI, K et al.Physica status solidi. B. Basic research. 1998, Vol 206, Num 2, pp 645-652, issn 0370-1972Article

Electronic structure of chalcogen impurities in siliconTHIAGARAJAN, M; IYAKUTTI, K; PALANIYANDI, E et al.Physica status solidi. B. Basic research. 1998, Vol 205, Num 2, pp 553-558, issn 0370-1972Article

Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxyCAVALLINI, A; FRABONI, B; PIZZINI, S et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 343-346, issn 0022-2313Conference Paper

Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etchingFEKLISOVA, O. V; YARYKIN, N. A.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 742-749, issn 0268-1242Article

Energy levels associated with extended defects in plastically deformed n-type siliconCAVALCOLI, D; CAVALLINI, A; GOMBIA, E et al.Journal de physique. III (Print). 1997, Vol 7, Num 7, pp 1399-1409, issn 1155-4320Conference Paper